BAV23C
www.vishay.com Vishay Semiconductors
Rev. 1.5, 13-Feb-18 1Document Number: 81902
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Small Signal Switching Diode, Dual
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MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual diode with common
cathode
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Notes
(1) Measured under pulse conditions; pulse time = tp 0.3 ms
(2) Device on fiberglass substrate
Note
(1) Device on fiberglass substrate
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAV23C BAV23C-E3-08 or BAV23C-E3-18 Common cathode KT6 Tape and reel
BAV23C-HE3-08 or BAV23C-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Continuous reverse voltage VR 200 V
Repetitive peak reverse voltage VRRM 250 V
Non-repetitive peak forward current t = 1 μs IFSM 9A
Non-repetitive peak forward surge current t = 1 s IFSM 0.5 A
Maximum average forward rectified current (1) IF(AV) 200 mA
Forward continuous current (2) IF400 mA
Repetitive peak forward current IFRM 625 mA
Power dissipation (2) Ptot 350 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 357 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Top -55 to +150 °C