AUTOMOTIVE GRADE Features Advanced Planar Technology Ultra Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Compliant Automotive Qualified * S1 AUIRF7343Q N-CHANNEL MOSFET 1 8 N-CH D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CH VDSS 55V -55V RDS(on) typ. 0.043 0.095 max. 0.050 0.105 ID 4.7A -3.4A P-CHANNEL MOSFET Top View Description Specifically designed for Automotive applications, these HEXFET(R) Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Base part number SO-8 AUIRF7343Q G Gate Standard Pack Form Quantity Tape and Reel 4000 Package Type AUIRF7343Q SO-8 Absolute Maximum Ratings D Drain S Source Orderable Part Number AUIRF7343QTR Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. N-Channel P-Channel VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation 55 4.7 3.8 38 EAS IAR EAR VGS dv/dt TJ TSTG Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range 72 4.7 Thermal Resistance Symbol RJA Parameter Junction-to-Ambient ( PCB Mount, steady state) -55 -3.4 V -2.7 -27 A 2.0 1.3 W 114 -3.4 0.20 20 5.0 Units -5.0 -55 to + 150 mJ A mJ V V/ns C Typ. Max. Units --- 62.5 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7343Q Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Gate-to-Source Forward Leakage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P 55 -55 --- --- --- --- --- --- 1.0 -1.0 7.9 3.3 --- --- --- --- --- --- --- 0.059 0.054 0.043 0.056 0.095 0.150 --- --- --- --- --- --- --- --- --- --- --- --- --- 0.050 0.065 0.105 0.170 --- --- --- --- 2.0 -2.0 25 -25 100 Gate-to-Source Reverse Leakage N-P --- --- 100 V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VGS(th) Gate Threshold Voltage gfs Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Conditions VGS = 0V, ID = 250A V VGS = 0V, ID = -250A Reference to 25C, ID = 1mA V/C Reference to 25C, ID = -1mA VGS = 10V, ID = 4.7A VGS = 4.5V, ID = 3.8A VGS = -10V, ID = -3.4A VGS = -4.5V, ID = -2.7A VDS = VGS, ID = 250A V VDS = VGS, ID = -250A VDS = 10V, ID = 4.5A S VDS = -10V, ID = -3.1A VDS = 55V, VGS = 0V VDS = -55V,VGS = 0V A VDS = 55V, VGS = 0V ,TJ = 55C VDS = -55V,VGS = 0V,TJ = 55C VGS = 20V nA VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 24 26 2.3 3.0 7.0 8.4 8.3 14 3.2 10 32 43 13 22 740 690 190 210 71 86 Min. Typ. --- --- --- --- --- --- --- --- --- --- --- --- --- 0.70 -0.80 60 54 120 85 36 38 3.4 4.5 10 13 12 22 4.8 15 48 64 20 32 --- --- --- --- --- --- nC ns pF N-Channel ID = 4.5A, VDS = 44V,VGS = 10V P-Channel ID = - 3.1A,VDS = -44V,VGS = -10V N-Channel VDD = 28V,ID = 1.0A,RG = 6.0 RD = 28 P-Channel VDD = -28V,ID = -1.0A,RG = 6.0 RD = 28 N-Channel VGS = 0V,VDS = 25V, = 1.0MHz P-Channel VGS = 0V,VDS = -25V, = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Max. Units 2.0 -2.0 38 -27 1.2 -1.2 90 80 170 130 Conditions A V ns nC TJ = 25C,IS = 2.0A,VGS = 0V TJ = 25C,IS = -2.0A,VGS = 0V N-Channel TJ = 25C ,IF = 2.0A, di/dt = 100A/s P-Channel TJ = 25C,IF = -2.0A, di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 22) N-Channel ISD 4.7A, di/dt 220A/s, VDD V(BR)DSS, TJ 150C. P-Channel ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 6.5mH, RG = 25, IAS = 4.7A. P-Channel Starting TJ = 25C, L = 20mH, RG = 25, IAS = -3.4A. Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board , t sec. 2 2015-9-30 AUIRF7343Q N-Channel Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 100 TJ = 25 C TJ = 150 C 10 1 V DS= 25V 20s PULSE WIDTH 3 4 5 6 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 10 TJ = 150 C TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 VSD ,Source-to-Drain Voltage (V) Fig. 4 Typical Source-Drain Diode Forward Voltage 2015-9-30 AUIRF7343Q N-Channel RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID = 4.7A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( C) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current EAS , Single Pulse Avalanche Energy (mJ) 200 TOP 160 BOTTOM ID 2.1A 3.8A 4.7A 120 80 40 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig. 7 Typical On-Resistance Vs. Gate Voltage 4 Fig 8. Maximum Avalanche Energy Vs. Drain Current 2015-9-30 AUIRF7343Q N-Channel 20 1200 C, Capacitance (pF) 1000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 800 600 400 Coss 200 ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 Crss 0 0 1 10 100 0 10 20 30 40 QG, Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 2015-9-30 AUIRF7343Q P-Channel Fig. 13 Typical Output Characteristics Fig. 12 Typical Output Characteristics 100 -ISD , Reverse Drain Current (A) -I D , Drain-to-Source Current (A) 100 TJ = 25 C TJ = 150 C 10 1 4 5 6 TJ = 150 C TJ = 25 C 1 0.1 0.2 V DS = -25V 20s PULSE WIDTH 3 10 7 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VSD ,Source-to-Drain Voltage (V) -VGS , Gate-to-Source Voltage (V) Fig. 14 Typical Transfer Characteristics 6 Fig. 15 Typical Source-Drain Diode Forward Voltage 2015-9-30 AUIRF7343Q P-Channel RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = -3.4 A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current EAS , Single Pulse Avalanche Energy (mJ) 300 ID -1.5A -2.7A BOTTOM -3.4A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting T J, Junction Temperature Fig. 18 Typical On-Resistance Vs. Gate Voltage 7 150 ( C) Fig 19. Maximum Avalanche Energy Vs. Drain Current 2015-9-30 P-Channel 1200 -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 960 Ciss 720 480 Coss 240 Crss 0 1 10 AUIRF7343Q VDS =-48V VDS =-30V VDS =-12V 16 12 8 4 0 100 ID = -3.1A -VDS , Drain-to-Source Voltage (V) 0 10 20 30 40 QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 2015-9-30 AUIRF7343Q SO-8 Package Outline (Dimensions are shown in millimeters (inches) D 8 6 7 6 M AX M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 A1 0.25 [ .010] C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M IN 5 A IN C H ES D IM B y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information 9 2015-9-30 AUIRF7343Q SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 10 2015-9-30 AUIRF7343Q Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M2 (+/- 200V) AEC-Q101-002 Class H1A (+/- 500V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/10/2014 9/30/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated data sheet with new IR corporate template Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-9-30