AUIRF7343Q
VDSS 55V
RDS(on) typ. 0.043
ID 4.7A
-55V
0.095
-3.4A
N-CH P-CH
max. 0.050 0.105
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional features of
these Automotive qualified HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and
dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Features
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
N-Channel P-Channel
VDS Drain-Source Voltage 55
-55 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7
IDM Pulsed Drain Current 38
-27
PD @TA = 25°C Maximum Power Dissipation 2.0 W
PD @TA = 70°C Maximum Power Dissipation 1.3
EAS Single Pulse Avalanche Energy (Thermally Limited) 72 114mJ
IAR Avalanche Current 4.7 -3.4 A
EAR Repetitive Avalanche Energy 0.20 mJ
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0
-5.0 V/ns
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
RJA Junction-to-Ambient ( PCB Mount, steady state) ––– 62.5
SO-8
AUIRF7343Q
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF7343Q SO-8 Tape and Reel 4000 AUIRF7343QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
P-CHANNEL MOSFET
N-CHANNEL MOSFET
AUIRF7343Q
2 2015-9-30
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch 55 ––– ––– V VGS = 0V, ID = 250µA
P-Ch -55 ––– ––– VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient N-Ch ––– 0.059 ––– V/°C Reference to 25°C, ID = 1mA
P-Ch ––– 0.054 ––– Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance
N-Ch ––– 0.043 0.050
VGS = 10V, ID = 4.7A
––– 0.056 0.065 VGS = 4.5V, ID = 3.8A
P-Ch ––– 0.095 0.105 VGS = -10V, ID = -3.4A
––– 0.150 0.170 VGS = -4.5V, ID = -2.7A
VGS(th) Gate Threshold Voltage N-Ch 1.0 ––– ––– V VDS = VGS, ID = 250µA
P-Ch -1.0 ––– ––– VDS = VGS, ID = -250µA
gfs Forward Trans conductance N-Ch 7.9 ––– ––– S VDS = 10V, ID = 4.5A
P-Ch 3.3 ––– ––– VDS = -10V, ID = -3.1A
IDSS Drain-to-Source Leakage Current
N-Ch ––– ––– 2.0
µA
VDS = 55V, VGS = 0V
P-Ch ––– ––– -2.0 VDS = -55V,VGS = 0V
N-Ch ––– ––– 25 VDS = 55V, VGS = 0V ,TJ = 55°C
P-Ch ––– ––– -25 VDS = -55V,VGS = 0V,TJ = 55°C
IGSS Gate-to-Source Forward Leakage N-P ––– ––– ± 100 nA VGS = ± 20V
Gate-to-Source Reverse Leakage N-P ––– ––– ± 100 VGS = ± 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge N-Ch ––– 24 36
nC
N-Channel
P-Ch ––– 26 38 ID = 4.5A, VDS = 44V,VGS = 10V
Qgs Gate-to-Source Charge N-Ch ––– 2.3 3.4
P-Ch ––– 3.0 4.5 P-Channel
Qgd Gate-to-Drain Charge N-Ch ––– 7.0 10 ID = - 3.1A,VDS = -44V,VGS = -10V
P-Ch ––– 8.4 13
td(on) Turn-On Delay Time N-Ch ––– 8.3 12
ns
N-Channel
P-Ch ––– 14 22 VDD = 28V,ID = 1.0A,RG = 6.0
tr Rise Time N-Ch ––– 3.2 4.8 RD = 28
P-Ch ––– 10 15
td(off) Turn-Off Delay Time N-Ch ––– 32 48 P-Channel
P-Ch ––– 43 64 VDD = -28V,ID = -1.0A,RG = 6.0
tf Fall Time N-Ch ––– 13 20 RD = 28
P-Ch ––– 22 32
Ciss Input Capacitance N-Ch ––– 740 –––
pF
N-Channel
P-Ch ––– 690 ––– VGS = 0V,VDS = 25V,ƒ = 1.0MHz
Coss Output Capacitance N-Ch ––– 190 –––
P-Ch ––– 210 ––– P-Channel
Crss Reverse Transfer Capacitance N-Ch ––– 71 ––– VGS = 0V,VDS = -25V,ƒ = 1.0MHz
P-Ch 86 –––
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current (Body Diode) N-Ch ––– ––– 2.0
A
P-Ch ––– ––– -2.0
ISM Pulsed Source Current N-Ch ––– ––– 38
(Body Diode) P-Ch ––– ––– -27
VSD Diode Forward Voltage N-Ch ––– 0.70 1.2 TJ = 25°C,IS = 2.0A,VGS = 0V
P-Ch ––– -0.80 -1.2 TJ = 25°C,IS = -2.0A,VGS = 0V
trr Reverse Recovery Time N-Ch ––– 60 90 ns N-Channel
P-Ch ––– 54 80 TJ = 25°C ,IF = 2.0A, di/dt = 100A/µs
Qrr Reverse Recovery Charge N-Ch ––– 120 170 nC P-Channel
P-Ch 85 130 TJ = 25°C,IF = -2.0A, di/dt = 100A/µs
V
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 22)
N-Channel ISD 4.7A, di/dt 220A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -3.4A, di/dt -150A/µs, VDD V(BR)DSS, TJ 150°C
N-Channel Starting TJ = 25°C, L = 6.5mH, RG = 25, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t sec.
AUIRF7343Q
3 2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Source-Drain Diode
Forward Voltage
Fig. 1 Typical Output Characteristics
N-Channel
1
10
100
3 4 5 6
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.2 0.5 0.8 1.1 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
AUIRF7343Q
4 2015-9-30
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig. 7 Typical On-Resistance Vs. Gate Voltage
N-Channel
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
4.7A
25 50 75 100 125 150
0
40
80
120
160
200
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
2.1A
3.8A
4.7A
AUIRF7343Q
5 2015-9-30
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
N-Channel
1 10 100
0
200
400
600
800
1000
1200
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D4.5A
V = 12V
DS
V = 30V
DS
V = 48V
DS
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Not es:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0. 50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7343Q
6 2015-9-30
P-Channel
Fig. 13 Typical Output Characteristics
Fig. 14 Typical Transfer Characteristics Fig. 15 Typical Source-Drain Diode
Forward Voltage
Fig. 12 Typical Output Characteristics
1
10
100
34567
V = -25V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
AUIRF7343Q
7 2015-9-30
Fig 16. Normalized On-Resistance
Vs. Temperature
Fig 17. Typical On-Resistance Vs.
Drain Current
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
Fig. 18 Typical On-Resistance Vs. Gate Voltage
P-Channel
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-3.4 A
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.5A
-2.7A
-3.4A
AUIRF7343Q
8 2015-9-30
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
P-Channel
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
1 10 100
0
240
480
720
960
1200
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-3.1A
V =-12V
DS
V =-30V
DS
V =-48V
DS
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7343Q
9 2015-9-30
SO-8 Part Marking Information
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSIN C H ES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C AB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
N O TES:
1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.
2. CONTROLLING DIM ENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIM EN SIO N D O ES N O T IN CLUD E M O LD PRO TRU SIO NS.
6 DIM EN SIO N D O ES N O T IN CLUD E M O LD PRO TRU SIO NS.
M O LD PRO TRU SIO N S N O T TO EXC EED 0.25 [.010].
7 D IM EN SIO N IS TH E LEN G TH O F LEAD FO R SO LD ERIN G TO
A S U B S T R A T E .
M O LD PRO TRU SIO N S N O T TO EXC EED 0.15 [.006].
8X 1.78 [.070]
AUIRF7343Q
10 2015-9-30
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
AUIRF7343Q
11 2015-9-30
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level SO-8 MSL1
ESD
Machine Model Class M2 (+/- 200V)†
AEC-Q101-002
Human Body Model Class H1A (+/- 500V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 1125V)†
AEC-Q101-005
RoHS Compliant Yes
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
9/30/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
3/10/2014 Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
† Highest passing voltage.
