MCC: TO-92 Plastic-Encapsulate Transistors @Q~ BC212,B,C TRANSISTOR(PNP) TO-92 1.EMITTER | . | | ! 2.BASE | 3.COLLECTOR I i 123 FEATURES Pcm: 0.35W (Tamb=25C) -0.1A lem: Vierycso: -60V ierage junction temperature range Ta, Tse: -55T to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) ase ae Collector-base breakdown voltage ViBRICBO ic= -10n A, le=0 -60 Vv Collector-emitter breakdown voltage VBRICEO Ic= -2 mA, la=0 ~50 Vv Emitter-base breakdown voltage V(BR)EBO le= -10 8 A, Ic=0 Vv Collector cut-off current Icao Vea= -30 V, le=0 -15 nA Collector cut-off current Iceo Vce= -30V, ls=0 -0.1 vA Emitter cut-off current leso Ves= -4 V, ic=0 -15 nA BC212 140 600 DC current gain BC212B hee Vce= -5 V, le= -2 mA 140 400 BC212C 350 600 Collector-emitter saturation voltage - VcEsat ic= -100 mA, ie= -5 mA -0.6 Vv Base-emitter saturation voltage VBEsat Ic= -100 mA, Is= -5 mA -1.2 V Vce= -5 V, Ic= -10 mA Transition frequency fr 200 MHz f =100MHz 77