TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
Publication Order Number:
TIP42C/D
© 2000 Semiconductor Components Industries, LLC.
November-2017, Rev. 2
TIP42 / TIP42C
PNP Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complement to TIP41 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating cond iti ons an d s tres sing the parts to these levels i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP42 TIP42 TO-220 3L (Single Gauge) Bulk
TIP42C TIP42C TO-220 3L (Single Gauge) Bulk
TIP42CTU TIP42C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP42 -40 V
TIP42C -100
VCEO Collector-Emitter Voltage TIP42 -40 V
TIP42C -100
VEBO Emitter-Base Vo ltage -5 V
ICCollector Current (DC) -6 A
ICP Collector Current (Pulse) -10 A
IBBase Current -2 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
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Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TC = 25°C) 65 W
Collector Dissipation (TA = 25°C) 2
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1) TIP42 IC = -30 m A, IB = 0 -40 V
TIP42C -100
ICEO Collector Cut-Off Current TIP42 VCE = -30 V, IB = 0-0.7
mA
TIP42C VCE = -60 V, IB = 0 -0.7
ICES Collector Cut-Off Current TIP42 VCE = -40 V, VEB = 0 -400 μA
TIP42C VCE = -100 V, VEB = 0 -400
IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -1 mA
hFE DC Current Gain(1) VCE = -4 V, IC = -0.3 A 30
VCE = -4 V, IC = -3 A 15 75
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = -6 A, IB = -600 mA -1.5 V
VBE(on) Base-Emitter On Voltage(1) VCE = -4 V, IC = -6 A -2.0 V
fT Current Gain Bandwidth Product VCE = -10 V, IC = -500 mA,
f = 1 MHz 3.0 MHz
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
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Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10 -100
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
-100
TIP42C
TIP42B
TIP42A
TIP42
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
0.5ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLEC TOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
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4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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