PROFET® BTS 410 H2
Semiconductor Group 1 03.97
Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of
V
bb protection
• Electrostatic discharge (ESD) protection
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
1)With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Product Summary
Overvoltage protection
V
bb
(
AZ
)
65 V
Operating voltage
V
bb
(
on
)
4.7 ... 42 V
On-state resistance
R
ON 220 mΩ
Load current (ISO)
I
L
(
ISO
)
1.8 A
Current limitation
I
L
(
SCr
)
1.5 A
TO-220AB/5
5
Standard 1
5
Straight leads 15
SMD
BTS 410 H2
Semiconductor Group 2
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3V
bb + Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
(Load, L) O Output to the load
Maximum Ratings at
T
j = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3)
V
bb 65 V
Load dump protection2)
V
LoadDump =
U
A +
V
s,
U
A = 13.5 V
R
I3)= 0.5 Ω,
R
L= 6.6 Ω,
t
d= 400 ms, IN= low or high
V
Load dump4)100 V
Load current (Short circuit current, see page 4)
I
Lself-limited A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150 °C
Power dissipation (DC), TC ≤ 25 °C
P
tot 50 W
Inductive load switch-off ener
gy
dissipation, sin
g
le pulse
V
bb
= 12V,
T
j,
start = 150°C,
T
C = 150°C const.
I
L = 1.8 A, ZL = 2.3 H, 0 Ω:
E
AS 4.5 J
Electrostatic dischar
g
e capabilit
y
(
ESD
)
IN:
(
Human Bod
y
Model
)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
V
ESD 1
2kV
Input voltage (DC)
V
IN -0.5 ... +6 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
±5.0
±5.0 mA
Thermal Characteristics
Parameter and Conditions S
y
mbol Values Unit
min typ max
Thermal resistance chip - case:
junction - ambient (free air):
R
thJC
R
thJA
--
-- --
-- 2.5
75 K/W
SMD version, device on PCB5):--35--
2)Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
R
I = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5)Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS 410 H2
Semiconductor Group 3
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at
T
j = 25 °C,
V
bb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L = 1.6 A
T
j=25 °C:
T
j=150 °C:
R
ON -- 190
390 220
440 mΩ
Nominal load current, ISO Norm
(
pin 3 to 5
)
V
ON = 0.5 V,
T
C = 85 °C
I
L(ISO) 1.6 1.8 -- A
Output current (pin 5) while GND disconnected or
GND pulled up,
V
bb=30 V,
V
IN= 0, see diagram
page 7
I
L(GNDhigh) -- -- 1 mA
Turn-on time IN to 90%
V
OUT:
Turn-off time IN to 10%
V
OUT:
R
L = 12 Ω,
T
j =-40...+150°C
t
on
t
off
15
5--
-- 125
85 µs
Slew rate on
10 to 30%
V
OUT,
R
L = 12 Ω,
T
j =-40...+150°C d
V
/dton -- -- 3 V/µs
Slew rate off
70 to 40%
V
OUT,
R
L = 12 Ω,
T
j =-40...+150°C -d
V
/dtoff -- -- 6 V/µs
Operating Parameters
Operating voltage 6)
T
j =-40...+150°C:
V
bb(on) 4.7 -- 42 V
Undervoltage shutdown
T
j =25°C:
T
j =-40...+150°C:
V
bb(under) 2.9
2.7 --
-- 4.5
4.7 V
Undervoltage restart
T
j =-40...+150°C:
V
bb(u rst) -- -- 4.9 V
Undervolta
g
e restart of char
g
e pump
see diagram page 12
V
bb(ucp) -- 5.6 6.0 V
Undervolta
g
e h
y
steresis
∆
V
bb(under) =
V
bb(u rst) -
V
bb(under) ∆
V
bb(under) -- 0.1 -- V
Overvoltage shutdown
T
j =-40...+150°C:
V
bb(over) 42 -- 52 V
Overvoltage restart
T
j =-40...+150°C:
V
bb(o rst) 40 -- -- V
Overvoltage hysteresis
T
j =-40...+150°C: ∆
V
bb(over) -- 0.1 -- V
Overvoltage protection7)
T
j =-40...+150°C:
I
bb=40 mA
V
bb(AZ) 65 70 -- V
Standby current (pin 3),
V
IN=0
T
j=-40...+150°C:
I
bb(off) -- 40 70 µA
Operating current (Pin 1)8),
V
IN=5 V
I
GND -- 1 -- mA
6)At supply voltage increase up to
V
bb= 5.6 V typ without charge pump,
V
OUT ≈
V
bb - 2 V
7) Meassured without load. See also
V
ON(CL) in table of protection functions and circuit diagram page 7.
8)Add
I
ST, if
I
ST > 0, add
I
IN, if
V
IN>5.5 V
BTS 410 H2
Parameter and Conditions Symbol Values Unit
at
T
j = 25 °C,
V
bb = 12 V unless otherwise specified min typ max
Semiconductor Group 4
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)9),
( max 450 µs if
V
ON >
V
ON(SC) )
I
L(SCp)
T
j
=-40°C:
T
j
=25°C:
T
j =+150°C:
4.0
3.5
2.0
--
5.5
3.5
11
10
7.5
A
Overload shutdown current limit
I
L(SCr)
V
ON= 3 V,
T
j =
T
jt (see timing diagrams, page 10) -- 1.5 -- A
Short circuit shutdown dela
y
after input pos. slope
V
ON >
V
ON(SC) ,
V
bb > 8 V,
T
j =-40..+150°C:
min value valid only, if input "low" time exceeds 60 µs
t
d(SC) -- -- 450 µs
Output clamp (inductive load switch off)
at
V
OUT =
V
bb -
V
ON(CL)
I
L= 40 mA,
T
j =-40..+150°C:
V
ON(CL) 61 68 73 V
I
L= 1 A,
T
j =-40..+150°C: -- -- 75
Short circuit shutdown detection10) volta
g
e
(pin 3 to 5)
V
ON(SC) -- 3.5 -- V
Thermal overload trip temperature
T
jt 150 -- -- °C
Thermal hysteresis
∆T
jt -- 10 -- K
Reverse battery (pin 3 to 1) 11)-
V
bb -- -- 32 V
Diagnostic Characteristics
Open load detection current
T
j
=-40...+150°C:
(included in standby current
I
bb
(
off
)
)
I
L(off) 15 30 60 µA
Open load detection voltage
T
j=-40..150°C:
V
OUT(OL) 234V
9)Short circuit current limit for max. duration of td(SC) max=450 µs, prior to shutdown
10) Short circuit detection only active for
V
bb > 8 V typ.
11)Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
BTS 410 H2
Parameter and Conditions Symbol Values Unit
at
T
j = 25 °C,
V
bb = 12 V unless otherwise specified min typ max
Semiconductor Group 5
Input and Status Feedback12)
Input turn-on threshold voltage
T
j =-40..+150°C:
V
IN(T+) 1.5 -- 2.4 V
Input turn-off threshold voltage
T
j =-40..+150°C:
V
IN(T-) 1.0 -- -- V
Input threshold hysteresis ∆
V
IN(T) -- 0.5 -- V
Off state input current (pin 2),
V
IN = 0.4 V
I
IN(off) 1--30
µ
A
On state input current (pin 2),
V
IN = 3.5 V
I
IN(on) 10 25 70 µA
Dela
y
time for status with open load
after Input neg. slope (see diagram page 11) td(ST OL3) -- 200 -- µs
Status invalid after positive input slope
(short circuit)
T
j=-40 ... +150°C:
t
d(ST SC) -- -- 450 µs
Status output (open drain)
Zener lim it voltage
T
j =-40...+ 150°C,
I
ST = +50 uA:
ST low voltage
T
j =-40...+150°C,
I
ST = +1.6 mA:
V
ST(high)
V
ST(low)
5.0
-- 6
-- --
0.4 V
12) If a ground resistor RGND is used, add the voltage drop across this resistor.
BTS 410 H2
Semiconductor Group 6
Truth Table
Input- Output Status
level level 412
B2 410
D2 410
E2/F2 410
G2 410
H2
Normal
operation L
HL
HH
HH
HH
HH
HH
H
Open load L
H
13)
HL
HH
LH
LH
LL
H
Short circuit
to GND L
HL
LH
LH
LH
LH
HH
L
Short circuit
to Vbb L
HH
HL
HH
H (L14))H
H (L14))H
H (L14))L
H
Overtem-
perature L
HL
LL
LL
LL
LL
LL
L
Under-
voltage L
HL
LL15)
L15) L15)
L15) H
HH
HH
H
Overvoltage L
HL
LL
LL
LH
HH
HH
H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
13)Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
14)Low resistance short
V
bb to output may be detected in ON-state by the no-load-detection
15)No current sink capability during undervoltage shutdown
Terms
PROFET
V
IN
ST
OUT
GND
bb
VST
VIN
IST
IIN
Vbb
Ibb
IL
VOUT
IGND
VON
1
2
4
3
5
RGND
Input circuit (ESD protection)
IN
GND
I
R
ZD ZD I
I
I1 I2
ESD-
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
Status output
ST
GND
ESD-
ZD
+5V
RST(ON)
ESD-Zener diode: 6 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Short circuit detection
Fault Condition:
V
ON > 3.5 V typ.;
V
bb > 8 V typ., IN high
Short circuit
detection
Logic
unit
+ Vbb
OUT
VON
BTS 410 H2
Semiconductor Group 7
Inductive and overvoltage output clamp
+ Vbb
OUT
GND PROFET
VZ
VON
V
ON clamped to 68 V typ.
Overvolt. and reverse batt. protection
+ Vbb
IN
ST
ST
R
IN
R
GND
GND
R
Signal GND
Logic
PROFET
VZ2
VZ1
V
Z1 = 6.2 V typ.,
V
Z2 = 70 V typ.,
R
GND= 150 Ω, RIN,
R
ST= 15 kΩ
Open-load detection
OFF-state diagnostic condition:
V
OUT > 3 V typ.; IN low
Open load
detection
Logic
unit VOUT
Signal GND
IL(OL)
OFF
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
Vbb 1
2
4
3
5
VIN VST VGND
Any kind of load. In case of Input=high is
V
OUT ≈
V
IN -
V
IN(T+) .
Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
VGND
VIN VST
Any kind of load. If VGND >
V
IN -
V
IN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
high
Normal load current can be handled by the PROFET
itself.
BTS 410 H2
Semiconductor Group 8
Vbb disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
Vbb
high
S
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
L
R
L
{
Z
L
Energy stored in load inductance:
E
L = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
E
AS= IL· L
2·RL·(Vbb + |VOUT(CL)|)· ln (1+ IL·RL
|VOUT(CL)| )
Maximum allowable load inductance for
a single switch off
L = f (IL );
T
j,start = 150°C,
T
C = 150°C const.,
V
bb = 12 V,
R
L = 0 Ω
L
[mH]
100
1000
10000
1.5 1.75 2 2.25 2.5 2.75 3
I
L [A]
Typ. transient thermal impedance chip case
ZthJC =
f
(tp, D), D=tp/T
ZthJC [K/W]
0.01
0.1
1
10
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
t
p [s]
BTS 410 H2
Semiconductor Group 9
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150 Ω in GND connection, protection against loss of
ground
Type BTS 412 B2 410D2 410E2 410G2 410H2 307 308
Logic version BDEGH
Overtemperatur e protection w ith hysteresi s
T
j >150 °C, latch function16)17)
T
j >150 °C, with auto-restart on cooling XXXXXXX
Short circuit to GND protection
switches off when
V
ON>3.5 V typ. and
V
bb> 8 V
typ16) (when first turned on after approx. 210 µs) XX
switches off when
V
ON>8.5 V typ.16)
(when first turned on after approx. 210 µs)
Achieved through overtemperature protection
XXX
XX
Open load detection
in OFF-state with sensing current 30
µ
A typ.
in ON-state with sensing voltage drop across
power transistor
XXXXXXX
Undervoltage shutdown with auto restart XXXXXXX
Overvoltage shutdown with auto restart18)XXXXX-X
Status feedback for
overtemperature
short circuit to GND
short to Vbb
open load
undervoltage
overvoltage
X
X
X
X
X
X
X
X
-19)
X
X
X
X
X
-19)
X
-
-
X
-
-19)
X
-
-
X
X
X
X
-
-
X
X
X
X
X
-
X
X
X
X
-
-
Status output type
CMOS
Open drain XXXXXXX
Output ne
g
ative volta
g
e transient limit
(fast inductive load switch off)
to
V
bb -
V
ON(CL) XXXXXXX
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
XXXXXXX
Protection against loss of GND XXXXXXX
16)Latch except when
V
bb -
V
OUT <
V
ON(SC) after shutdown. In most cases
V
OUT = 0 V after shutdown (
V
OUT ≠
0 V only if forced externally). So the device remains latched unless
V
bb <
V
ON(SC) (see page 4). No latch
between turn on and td(SC).
17) With latch function. Reseted by a) Input low, b) Undervoltage
18)No auto restart after overvoltage in case of short circuit
19)Low resistance short
V
bb to output may be detected in ON-state by the no-load-detection
BTS 410 H2
Semiconductor Group 10
Timing diagrams
Figure 1a: Vbb turn on:
IN
V
OUT
t
V
bb
ST open drain
A
A
td(bb IN)
in case of too early
V
IN=high the device may not turn on (curve A)
t
d(bb IN) approx. 150 µs
Figure 2a: Switching an inductive load
IN
ST
L
t
V
I
OUT
Figure 3a: Turn on into short circuit,
IN
ST
OUT
L
t
V
I
td(SC)
td(SC) approx. -- µs
V
bb -
V
OUT < 3.5 V typ.
Figure 3b: Turn on into overload,
IN
ST
L
t
I
L(SCr)
I
L(SCp)
I
Heating up may require several seconds
V
bb -
V
OUT < 3.5 V typ.
BTS 410 H2
Semiconductor Group 11
Figure 3c: Short circuit while on:
IN
ST
OUT
L
t
V
I**)
**) current peak approx. 20 µs
Figure 4a: Overtemperature,
Reset if (IN=low) and (
T
j<
T
jt)
IN
ST
OUT
J
t
V
T
*) ST goes high , when
V
IN=low and
T
j<
T
jt
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
IN
ST
OUT
L
t
V
Iopen normal
td(ST OL3)
*)
in case of external capacity td(ST,OL3) may be higher due to high
impedance *)
I
L = 30 µA typ
Figure 5b: Open load: detection in OFF-state, open
load occurs in off-state
IN
ST
OUT
L
t
V
Iopen
load normal
load
normal
load
*) *)
*)
I
L = 30 µA typ
BTS 410 H2
Semiconductor Group 12
Figure 6a: Undervoltage:
IN
V
OUT
t
V
bb
ST open drain
VV
bb(under) bb(u rst)
bb(u cp)
V
Figure 6b: Undervoltage restart of charge pump
bb(under)
V
Vbb(u rst)
Vbb(over)
Vbb(o rst)
Vbb(u cp)
off-state
on-state
VON(CL)
Vbb
Von
off-state
charge pump starts at
V
bb(ucp) =5.6 V typ.
Figure 7a: Overvoltage:
IN
V
OUT
t
V
bb
ST
ON(CL)
VVbb(over) Vbb(o rst)
Figure 9a: Overvoltage at short circuit shutdown:
IN
V
OUT
t
V
bb
ST
IL
Vbb(o rst)
Output short to GND
short circuit shutdown
Overvoltage due to power line inductance. No overvoltage auto-
restart of PROFET after short circuit shutdown.
BTS 410 H2
Semiconductor Group 13
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5 Ordering code
BTS 410 H2 Q67060-S6105-A2
TO-220AB/5, Option E3043 Ordering code
BTS 410 H2 E3043 Q67060-S6105-A3
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS410H2 E3062A T&R: Q67060-S6105-A4
