Power Transistors MJ16010, MJ16012, MJH16010, MJH16012 HARRIS SEMICOND SECTOR e?7E D ws File Number 1839 Mm 430ee7) O0cO450 4 MBHAS T= 33- 15 T-33-(3 5-A Switchax || Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features: Applications: a Fast switching speed @ High-voltage ratings. Veey = 850 V w Low V,,(sat) at!,= 10A @ Switching regulators The MJ16010, MJ16012, MJH16010, and MJH16012 SwitchMax !! series of silicon n-p-n power transistors fea- ture high voltage capability, fast switching speeds, and low saturation voltages, together with high safe-operating-area (SOA) ratings They are specially designed for off-line power supplies, converter circuits, and pulse-width-modulated regulators These high-voltage, high-speed transistors are tested for parameters that are essential to the design of high-power switching circuits Switching times, including MAXIMUM RATINGS, Absolute-Maximum Values: a Off-line power supplies @ High-voltage inverters TERMINAL DESIGNATIONS c (FLANGE} Mult6010 MuJI6012 S2C8- 27516 JEDEC TO-204AA (200 mil diameter pin Isolation) E COLLECTOA O MJH16010 FLANGR MJH16012 TOP VIEW JEDEC TO-218AC 926$-40257- inductive turn-off time, and saturation voltages are specified at 100C to provide information necessary for worst-case design. The MJ16010 and MJ16012 transistors are supplied in steel JEDEC TO-204AA hermetic packages. The MJH16010 and MJH16012 transistors are supplied in JEDEC TO-218AC plastic packages. MJ16010 MJH16010 MJ16012 MJH16012 Veev Vee = TOV Lol cece cece cece rete teenies 850 Vv VeEG ene ene tenet eee e ene ee etn nn tenes 450 Vv ERO ee cae eeeteee net eens et enenene 6 Vv Ig(SAL) oo cece eee eee ees 10 A Vgc eee e ee ee beet eee e eee e bebe bene eens 15 A 1 20 A Vp ence ce cece e tence eter ete e ee eeee 10 A laid once ence cence teed eee tence eee eeese eee eenaes 15 A Py @T = WC occ ccc cece cee tee ce eee ne ees 175 135 Ww @T~= 100C 2. cece cee eee ee 100 3.8 Ww T, above 25C, derate linearly ...............00008 1 1.08 WPGC a -65 to 200 -65 to 150 C TL At distance = 1/8 in (3.17 mm) from seating plane for 105 Max .......... cece eee eee 235 C Ll At distance = 1/16 in. (158 mm) from seating plane for 10s max ..............00.00008e 235 C Rac etc e ce ne eee eee cence eee nen eens enna eens 1 0.93 C/W 2-682eve D 4302ec2?1 OOeO4SL & MBHAS HARRIS SEMICOND SECTOR ee Power Transistors MJ16010, MJ16012, MJH16010. MJH16012 a i 233-15, MJ16010, MJH16010 33 -/3 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic | symbot | min | Typ Mex [| Unit | OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage VCEO(sus} 450 - _- Vde (ic = 100 mA, Ig = 0) Collector Cutoff Current Icev mAdc (Vcev = 850 Vdc. Veg(oft) = 1 5 Vdc) _ _ 0.25 (Vcev = 850 Vde, Vge(off) = 1 5 Vde, Te = 100C) - - 1.6 Collector Cutoff Current IceR _ - 2.5 mAdc (Vcg = 850 Vdc, Reg = 50 N, Tc = 100C) Emitter Cutoff Current leBo _ = 1.0 mAdc (Veg = 6 O Vde, Ic = 0} SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Is/b See Figure 1 Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 2 ON CHARACTERISTICS (1) Coltector-Emitter Saturation Voltage VcElsat) Vde {Ic = 5 0 Ade, tg = 0 7 Adc) _ 05 2.5 {I = 10 Ade, Ig = 1 3 Ade} - 1.0 3.0 (Ic = 10 Ade, Ig = 13 Adc, Tc = 100C) - - 3.0 Base-Emitter Saturation Voltage VBE(san Vde (Ic = 10 Ade, tg = 1 3 Adc) _ 1.0 16 (Ig = 10 Ade, Ig = 13 Ade, Tce = 100C) - - 15 OC Current Gain hee 5.0 ~ _ _ (I = 15 Adc, Veg = 5 O Vdc) DYNAMIC CHARACTERISTICS Output Capacitance Cob - - 400 pF (Vcg = 10 Vde, ig = 0. fragt = 1 O kHz) SWITCHING CHARACTERISTICS Rasistive Load Delay Time _ tg _ 40 - ns Rise Time vc - + eo ve (Ig2 = 2 6 Adc, tr _ 100 _- Storage Time cc Rp=16) ts - 1400 ig, =13 Adc. Falt Time PW = 30 us tf _- 140 _ Storage Time oe BS. ts =_ 600 _ < = 6. Fall Time a Duty Cycle <2 0%) (VBE{off) = 5.0 Vde) if = 700 = Inductive Load Storage Time tgy - 800 1800 ns Fall Time (Ic = 10 Ade, {Tc = 100C) tf; _- 50 200 Crossover Time ig1=13 Adc, fo 100 250 Storage Time Veetoft) = 5 0 Vde, tsy _- 860 _ Fall Time VCE(pk) = 400 Vdc} _} (Te = 150C) h = 40 = Crossover Time te 80 {1} Pulse Test Pulse Width = 300 ys, Duty Cycle < 20% 2-683Power Transistors . T- 3 3 7 IS - MJ16010, MJ16012, MJH16010, MJH16012 7-33 -/3 HARRIS SEMICOND SECTOR e?7E D MM 4302271 GO20452 & MBHAS MJ16012, MJH16012 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted} [ Characteristic | Symbol | Min | Typ | Max | Unit OFF CHARACTERISTICS (1) Coltector-Emiter Sustaining Voltage VeEO(sus) 450 - - Vde {Ic = 100 mA, Ip = 0) Collector Cutoff Current Icey ~ mAde (Vcev = 850 Vdc, Vgeroft) = 1 5 Vde) _ _ 0.25 (Vcevy = 850 Vdc, Vgejoff) = 1 5 Vde, Te = 100C) - _ 1.5 Collector Cutoff Current lcER ~ - 25 mAdc (Veg = 850 Vdc, Rgg = 50 0. Te = 100C) Emitter Cutoff Current leBo - - 1.0 mAdc (Veg = 6 0 Vde, Ic = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased IS/b See Figure 1 Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 2 ON CHARACTERISTICS (1) Collector-Emitter Saturation Voltage VcE(sat) Vde lig = 5 0 Ade, Ig = 0 5 Adc} - _ 25 (I = 10 Ade, Ig = 1 0 Adc) _ 3.0 Ig = 10 Ade. Ig = 10 Ade, Te = 100C) = = 3.0 Base-Emitter Saturation Voltage VBEtsat) Vde {Ic = 10 Ade, Ip = 1 0 Adc) _ {I = 10 Ade, Ig = 1 0 Adc, Te = 100C) - - DC Current Gain hee 7.0 - - - (Ic = 15 Adc, Veg = 5 0 Vde} DYNAMIC CHARACTERISTICS Output Capacitance Cob _ _ 400 pF (Veg = 10 Vac. Ig = 0. fragt = 1 0 KHz) SWITCHING CHARACTERISTICS Resistive Load ~ an tay Time _ 40 - Delay (lg = 10 Adc, td ns Rise Time {Ilg2 = 20 Adc, tr - 100 _- Voc = 250 Vde, Storage Time Rg=169) ts - 1400 _- Igy = 10 Adc. Fall Time tf - 140 _ Storage Time PW = 30 us. t 600 Duty Cycle <2 0% Vv; = 50 Vde S Fall Time vty } BE (off) } tf = 100 = inductive Load Storage Time tgy - 800 1500 ns Fall Time {ic = 10 Adc, {To = 100C} tif ~ 50 160 Crossover Time Ig1 = 10 Ade, te _ 100 200 Storage Time VBE(off) = 5 O Vde, Igy - 860 - Fail Time VCE{pk) = 400 Vde} {Tc = 160C) tt _ 40 = Crossover Time Ig - 80 > (1) Pulse Test Pulse Width = 300 us, Duty Cycle < 20% 2-684HARRIS SEMICOND SECTOR e7E D MM 430e2?1 00200453 T MBHAS . - Power Transistors MJ16010, MJ16012, MJH16010, MJH16012 T- 33-15 7-33-13 20 _ 20 2 10 MJ16010/12 = 18 @ 50 MJH16010/1 S 2 @ & ze 14 5 20 a # 10 Te = 28C S 3 as0 g@ 10 Br 2 4.0 = a Te < 100C - a a ss _ -t 2 S 60 Veefatt) = 9 1.0 to 5.0V & 010 -- BONDING WIRE LIMIT _ 0.05 E77 ~ THERMAL LIMIT = SECOND BAEAKDOWN iIMIT = 20 002 0 50 io 20 (30 50 70 100 200 300 450 160 150 200 250 350 450 600 700 850 Vee. COLLECTOR-EMITTER VOLTAGE (VOLTS) . Vee(pk) PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS) Fig. 1 Maximum forward-bias safe-operating-areas for all types. Fig. 2 Maximum reverse-bias safe-operating-areas for all types. 100 Veeinw) _ DERATING = 8 & 90% VeEtpk) f\ 90% Icjoxy +] ty tebe thi 3 THERMAL 3 wy 40 = 10% 3 MJNIGOIO, MJH16012 Icon) ~2-0% te 20 _____._ mygo10, Mu16012 0 0 40 80 120 160 200 Te, CASE TEMPERATURE (C) TIME Fig. 3 Dissipation and |, , derating curves for ail types. Fig. 4 Inductive switching measurements display. 2-685