Freescale Semiconductor Technical Data Document Number: MMRF1007H Rev. 0, 12/2013 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MMRF1007HR5 MMRF1007HSR5 RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 sec, Duty Cycle = 10% Power Gain -- 20 dB Drain Efficiency -- 56% Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power Features 965--1215 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Designed for Push--Pull Operation Greater Negative Gate--Source Voltage Range for Improved Class C Operation In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. NI--1230H--4S MMRF1007HR5 NI--1230S--4S MMRF1007HSR5 PARTS ARE PUSH--PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 C TC 150 C TJ 225 C Case Operating Temperature Operating Junction Temperature (1) 1. Continuous use at maximum temperature will affect MTTF. Freescale Semiconductor, Inc., 2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1007HR5 MMRF1007HSR5 1 Table 2. Thermal Characteristics Characteristic Value (1) Symbol Thermal Resistance, Junction to Case Case Temperature 67C, 1000 W Peak, 128 sec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 150 mA Case Temperature 62C, Mode--S Pulse Train, 80 Pulses of 32 sec On, 18 sec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, IDQ = 150 mA ZJC Unit C/W 0.02 0.07 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit IGSS -- -- 10 Adc V(BR)DSS 110 -- -- Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS -- -- 100 Adc Gate Threshold Voltage (2) (VDS = 10 Vdc, ID = 1000 Adc) VGS(th) 0.9 1.6 2.4 Vdc Gate Quiescent Voltage (3) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.2 3 Vdc Drain--Source On--Voltage (2) (VGS = 10 Vdc, ID = 2.7 Adc) VDS(on) -- 0.15 -- Vdc Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.27 -- pF Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 86.7 -- pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss -- 539 -- pF Characteristic Off Characteristics (2) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 165 mA) On Characteristics Dynamic Characteristics (2) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle Power Gain Gps 19 20 22 dB Drain Efficiency D 54 56 -- % Input Return Loss IRL -- --23 --9 dB 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 2. Each side of device measured separately. 3. Measurement made with device in push--pull configuration. (continued) MMRF1007HR5 MMRF1007HSR5 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performance -- 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Mode--S Pulse Train, 80 Pulses of 32 sec On, 18 sec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle Power Gain Gps -- 19.8 -- dB Drain Efficiency D -- 59.0 -- % BDrp -- 0.21 -- dB Burst Droop Typical Performance -- 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1090 MHz, 128 sec Pulse Width, 10% Duty Cycle Power Gain Gps -- 21.4 -- dB Drain Efficiency D -- 56.3 -- % Input Return Loss IRL -- --25.3 -- dB MMRF1007HR5 MMRF1007HSR5 RF Device Data Freescale Semiconductor, Inc. 3 VBIAS + C1 C2 C3 C4 C21 C22 + + C23 C24 VSUPPLY L1 BALUN 1 Z3 RF INPUT Z1 C13 R1 Z5 Z7 Z11 Z13 Z15 Z17 C17 Z19 Z21 C18 Z9 RF Z23 OUTPUT C10 Z2 Z4 C9 Z6 Z8 C12 Z10 DUT C11 Z12 C15 C16 Z16 Z18 Z14 Z20 Z22 R2 C19 C14 VBIAS L2 + C5 C6 C7 C20 C8 C25 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 BALUN 2 0.140 x 0.083 0.300 x 0.083 0.746 x 0.220 0.075 x 0.631 0.329 x 0.631 0.326 x 0.631 0.240 x 0.631 Z13, Z14 Z15, Z16 Z17, Z18 Z19, Z20 Z21, Z22 Z23 PCB C26 + + C27 C28 VSUPPLY 0.143 x 0.631 0.135 x 0.631 0.102 x 0.632 0.130 x 0.631 0.736 x 0.215 0.410 x 0.083 Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55 Figure 2. MMRF1007HR5(HSR5) Test Circuit Schematic Table 5. MMRF1007HR5(HSR5) Test Circuit Component Designations and Values Part Description Manufacturer Part Number Balun 1, 2 Balun Anaren 3A412 Anaren C1, C5 22 F, 25 V Tantalum Capacitors TPSD226M025R AVX C2, C6 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet C3, C7 0.22 F, 100 V Chip Capacitors C1210C224K1RAC Kemet C4, C8, C17, C18, C19, C20, C21, C25 36 pF Chip Capacitors ATC100B360JT500XT ATC C9 1.0 pF Chip Capacitor ATC100B1R0CT500XT ATC C12, C16 0.8--8.0 pF Variable Capacitors 27291SL Johanson C10, C11, C13, C14, C15 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C22, C26 0.022 F, 100 V Chip Capacitors C1825C223K1GAC Kemet C23, C24, C27, C28 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp L1, L2 Inductors 3 Turn GA3094--AL Coilcraft R1, R2 1000 , 1/3 W Chip Resistors CRCW12101001FKEA Vishay MMRF1007HR5 MMRF1007HSR5 4 RF Device Data Freescale Semiconductor, Inc. C24 C23 C1 C3 C2 BALUN 1 C21 C4 C13 R1 C12 C11 C9 R2 C6 C5 C8 C7 C15 CUT OUT AREA C10 -- C22 BALUN 2 L1 C17 C18 C16 C19 C20 C14 L2 C25 C26 C27 -- C28 Figure 3. MMRF1007HR5(HSR5) Test Circuit Component Layout MMRF1007HR5 MMRF1007HSR5 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 22 21 Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 10 Gps, POWER GAIN (dB) C, CAPACITANCE (pF) Ciss 60 VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 20 50 Gps 40 30 19 18 20 D 10 17 16 1 0 10 20 40 30 50 1 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) PEAK Note: Each side of device measured separately. Figure 5. Power Gain and Drain Efficiency versus Output Power Figure 4. Capacitance versus Drain--Source Voltage 22 24 Gps, POWER GAIN (dB) P1dB = 1065 W (60.3 dBm) 20 P3dB = 1182 W (60.7 dBm) 19.5 19 18.5 18 500 23 VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 600 700 Actual 900 1000 1100 1200 1300 20 1500 mA 19 750 mA 18 375 mA 17 150 mA VDD = 50 Vdc f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 10 1 1000 100 10000 Pout, OUTPUT POWER (WATTS) PEAK Figure 6. Power Gain versus Output Power Figure 7. Power Gain versus Output Power 65 20 19 18 VDD = 30 V 17 0 3000 mA 21 Pout, OUTPUT POWER (WATTS) PEAK 21 16 22 16 800 IDQ = 150 mA, f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 22 IDQ = 6000 mA 23 21 Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) 21.5 Gps, POWER GAIN (dB) 25 Ideal 20.5 0 10000 1000 100 200 400 D, DRAIN EFFICIENCY (%) 1000 35 V 40 V 45 V 50 V 600 800 1000 1200 1400 60 55 TC = --30_C 50 45 40 20 25_C VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 85_C 25 30 35 40 Pout, OUTPUT POWER (WATTS) PEAK Pin, INPUT POWER (dBm) PEAK Figure 8. Power Gain versus Output Power Figure 9. Output Power versus Input Power 45 MMRF1007HR5 MMRF1007HSR5 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 22 Gps, POWER GAIN (dB) 70 VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 21 60 Gps 50 20 40 TC = --30_C 19 18 25_C 17 16 30 20 D 10 85_C 10 1 D, DRAIN EFFICIENCY (%) 23 0 10000 1000 100 Pout, OUTPUT POWER (WATTS) PEAK 109 109 108 108 MTTF (HOURS) MTTF (HOURS) Figure 10. Power Gain and Drain Efficiency versus Output Power 107 106 105 107 106 105 104 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 128 sec, Duty Cycle = 10%, and D = 56%. This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Mode--S Pulse Train, Pulse Width = 32 sec, Duty Cycle = 6.4%, and D = 59%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature -128 sec, 10% Duty Cycle Figure 12. MTTF versus Junction Temperature -Mode--S MMRF1007HR5 MMRF1007HSR5 RF Device Data Freescale Semiconductor, Inc. 7 Zo = 5 f = 1030 MHz Zload f = 1030 MHz Zsource VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource Zload 1030 3.93 + j0.09 1.54 + j1.42 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 13. Series Equivalent Source and Load Impedance MMRF1007HR5 MMRF1007HSR5 8 RF Device Data Freescale Semiconductor, Inc. C24 -C23 C1 C3 C21 C4 BALUN 1 C13 R1 C29 C12 C11 C9 R2 C8 C6 C15 CUT OUT AREA C10 -- C22 BALUN 2 L1 C16 C17 C18 C19 C20 C14 L2 C25 C26 C7 C5 -- C2 C27 C28 Figure 14. MMRF1007HR5(HSR5) Test Circuit Component Layout -- 1090 MHz Table 6. MMRF1007HR5(HSR5) Test Circuit Component Designations and Values -- 1090 MHz Part Description Manufacturer Part Number Balun 1, 2 Balun Anaren 3A412 Anaren C1, C5 22 F, 25 V Tantalum Capacitors TPSD226M025R0200 AVX C2, C6 2.2 F, 50 V 1825 Chip Capacitors C1825C225J5RAC--TU Kemet C3, C7 0.22 F, 100 V Chip Capacitors C1210C224K1RAC--TU Kemet C4, C8, C17, C18, C19, C20, C21, C25 36 pF Chip Capacitors ATC100B360JT500XT ATC C9 1.0 pF Chip Capacitor ATC100B1R0BT500XT ATC C12, C16 0.8--8.0 pF Variable Capacitors 27291SL Johanson C10, C11, C13, C14, C15, C29 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C22, C26 0.022 F, 100 V Chip Capacitors C1825C223K1GAC Kemet C23, C24, C27, C28 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp L1, L2 Inductors 3 Turn GA3094--ALC Coilcraft R1, R2 1000 , 1/4 W Chip Resistors CRCW12061K00FKEA Vishay PCB CuClad, 0.030, r = 2.55 250GX--0300--55--22 Arlon MMRF1007HR5 MMRF1007HSR5 RF Device Data Freescale Semiconductor, Inc. 9 TYPICAL CHARACTERISTICS -- 1090 MHZ 60 VDD = 50 Vdc I = 150 mA 21 DQ f = 1090 MHz Pulse Width = 128 sec 20 Duty Cycle = 10% 50 40 Gps 19 30 D 18 20 17 10 16 10 100 1000 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 22 0 3000 Pout, OUTPUT POWER (WATTS) PEAK Figure 15. Power Gain and Drain Efficiency versus Output Power MMRF1007HR5 MMRF1007HSR5 10 RF Device Data Freescale Semiconductor, Inc. Zo = 5 f = 1090 MHz f = 1090 MHz Zsource Zload VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource Zload 1090 2.98 + j3.68 1.51 + j2.02 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 16. Series Equivalent Source and Load Impedance -- 1090 MHz MMRF1007HR5 MMRF1007HSR5 RF Device Data Freescale Semiconductor, Inc. 11 PACKAGE DIMENSIONS MMRF1007HR5 MMRF1007HSR5 12 RF Device Data Freescale Semiconductor, Inc. MMRF1007HR5 MMRF1007HSR5 RF Device Data Freescale Semiconductor, Inc. 13 MMRF1007HR5 MMRF1007HSR5 14 RF Device Data Freescale Semiconductor, Inc. MMRF1007HR5 MMRF1007HSR5 RF Device Data Freescale Semiconductor, Inc. 15 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2013 Description Initial Release of Data Sheet MMRF1007HR5 MMRF1007HSR5 16 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Home Page: freescale.com Web Support: freescale.com/support Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including "typicals," must be validated for each customer application by customer's technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2013 Freescale Semiconductor, Inc. MMRF1007HR5 MMRF1007HSR5 Document Number:Data MMRF1007H RF Device Rev. 0, 12/2013 Freescale Semiconductor, Inc. 17