MMRF1007HR5 MMRF1007HSR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF power transistors designed for applications operating at frequencies
from 900 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications, such as IFF and DME.
Typical Pulse Performance: VDD =50Vdc,I
DQ = 150 mA, Pout =
1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 sec, Duty
Cycle = 10%
Power Gain — 20 dB
Drain Efficiency — 56%
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +110 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1) TJ225 C
1. Continuous use at maximum temperature will affect MTTF.
Document Number: MMRF1007H
Rev. 0, 12/2013
Freescale Semiconductor
Technical Data
965--1215 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MMRF1007HR5
MMRF1007HSR5
NI--1230H--4S
MMRF1007HR5
PARTS ARE PUSH--PULL
NI--1230S--4S
MMRF1007HSR5
(Top View)
RFoutA/VDSA
31
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2013.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMRF1007HR5 MMRF1007HSR5
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case
Case Temperature 67C, 1000 W Peak, 128 sec Pulse Width, 10% Duty Cycle,
50 Vdc, IDQ = 150 mA
Case Temperature 62C, Mode--S Pulse Train, 80 Pulses of 32 sec On, 18 sec
Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, IDQ = 150 mA
ZJC
0.02
0.07
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1B
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (2)
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 10 Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D= 165 mA)
V(BR)DSS 110 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0Vdc)
IDSS — — 100 Adc
On Characteristics
Gate Threshold Voltage (2)
(VDS =10Vdc,I
D= 1000 Adc)
VGS(th) 0.9 1.6 2.4 Vdc
Gate Quiescent Voltage (3)
(VDD =50Vdc,I
D= 150 mAdc, Measured in Functional Test)
VGS(Q) 1.5 2.2 3Vdc
Drain--Source On--Voltage (2)
(VGS =10Vdc,I
D=2.7Adc)
VDS(on) —0.15 —Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —1.27 —pF
Output Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —86.7 —pF
Input Capacitance
(VDS =50Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —539 —pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 150 mA, Pout = 1000 W Peak (100 W Avg.),
f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain Gps 19 20 22 dB
Drain Efficiency D54 56 — %
Input Return Loss IRL —-- 2 3 -- 9 dB
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
2. Each side of device measured separately.
3. Measurement made with device in push--pull configuration. (continued)
MMRF1007HR5 MMRF1007HSR5
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performance — 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 150 mA, Pout = 1000 W Peak
(100 W Avg.), f = 1030 MHz, Mode--S Pulse Train, 80 Pulses of 32 sec On, 18 sec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle
Power Gain Gps —19.8 —dB
Drain Efficiency D—59.0 — %
Burst Droop BDrp —0.21 —dB
Typical Performance — 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 150 mA, Pout = 1000 W Peak
(100 W Avg.), f = 1090 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain Gps —21.4 —dB
Drain Efficiency D—56.3 — %
Input Return Loss IRL —--25.3 —dB
4
RF Device Data
Freescale Semiconductor, Inc.
MMRF1007HR5 MMRF1007HSR5
C6
Figure 2. MMRF1007HR5(HSR5) Test Circuit Schematic
Z13, Z14 0.143x 0.631
Z15, Z16 0.135x 0.631
Z17, Z18 0.102x 0.632
Z19, Z20 0.130x 0.631
Z21, Z22 0.736x 0.215
Z23 0.410x 0.083
PCB Arlon CuClad 250GX--0300--55--22, 0.030,r=2.55
Z1 0.140x 0.083
Z2 0.300x 0.083
Z3, Z4 0.746x 0.220
Z5, Z6 0.075x 0.631
Z7, Z8 0.329x 0.631
Z9, Z10 0.326x 0.631
Z11, Z12 0.240x 0.631
RF
INPUT
Z7
C10
Z8
Z1
DUT
VSUPPLY
Z12
RF
OUTPUT
Z23
C17
Z15
C22 C23
+
BALUN 1
BALUN 2
Z21
Z9 C18
C19
C20
Z22Z16
C15
C12
C3C1 C4
Z11
C21 C24
+
VBIAS +
C2
R1
Z10
Z5
Z6
Z3
Z4
C11
Z2
C9
L1
Z19
Z20
R2
C7C5 C8
VBIAS +
C16
Z13
Z14
Z17
Z18
C13
L2
VSUPPLY
C26 C27
+
C25 C28
+
C14
Table 5. MMRF1007HR5(HSR5) Test Circuit Component Designations and Values
Part Description Manufacturer Part Number
Balun 1, 2 Balun Anaren 3A412 Anaren
C1, C5 22 F, 25 V Tantalum Capacitors TPSD226M025R AVX
C2, C6 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet
C3, C7 0.22 F, 100 V Chip Capacitors C1210C224K1RAC Kemet
C4, C8, C17, C18, C19,
C20, C21, C25
36 pF Chip Capacitors ATC100B360JT500XT ATC
C9 1.0 pF Chip Capacitor ATC100B1R0CT500XT ATC
C12, C16 0.8--8.0 pF Variable Capacitors 27291SL Johanson
C10, C11, C13, C14, C15 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC
C22, C26 0.022 F, 100 V Chip Capacitors C1825C223K1GAC Kemet
C23, C24, C27, C28 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
L1, L2 Inductors 3 Turn GA3094--AL Coilcraft
R1, R2 1000 , 1/3 W Chip Resistors CRCW12101001FKEA Vishay
MMRF1007HR5 MMRF1007HSR5
5
RF Device Data
Freescale Semiconductor, Inc.
Figure 3. MMRF1007HR5(HSR5) Test Circuit Component Layout
--
--
CUT OUT AREA
C1
C2
C3
C4
R1
C12
C10
C11
C6
R2
C8
C7
C5
C21
C13 L1
C23
C24
C22
C15 C16 C17
C18
C19
C20
C27
C28
C26
L2
C14
C25
C9
BALUN 1 BALUN 2
6
RF Device Data
Freescale Semiconductor, Inc.
MMRF1007HR5 MMRF1007HSR5
TYPICAL CHARACTERISTICS
50
1
1000
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
Ciss
100
10
40
Coss
Crss
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0Vdc
22
1
0
60
10
18
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 5. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
17
16
1000 10000
Gps
20
19
21
100
10
VDD =50Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
21.5
500
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain versus Output Power
700 800 900 1000
Gps, POWER GAIN (dB)
P3dB = 1182 W (60.7 dBm)
Actual
Ideal
VDD =50Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
17
25
10
20
19
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain versus Output Power
Gps, POWER GAIN (dB)
100
18
IDQ = 6000 mA
1000 10000
1500 mA
150 mA
375 mA
750 mA
21
22
Figure 8. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEAK
Gps, POWER GAIN (dB)
VDD =30V
23
0
16
35 V
20
45 V
200 400 600 800 1000 1200 1400
50 V
40 V
18
Note: Each side of device measured separately.
20
22
600
P1dB = 1065 W (60.3 dBm)
3000 mA
22
17
19
21
IDQ = 150 mA, f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
45
40
65
20
25_C
3525
55
50
Pin, INPUT POWER (dBm) PEAK
Figure 9. Output Power versus Input Power
Pout, OUTPUT POWER (dBm)
30 40
60
45
VDD =50Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
16
23
24
VDD =50Vdc
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
85_C
TC=--30_C
130012001100
21
20.5
20
19.5
19
18.5
18
1
MMRF1007HR5 MMRF1007HSR5
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
23
1
0
100
17
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 10. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
16
1000 10000
25_C
TC=--30_C
85_C
20
18
Gps
19
20
21
10
10
VDD =50Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
22
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 11. MTTF versus Junction Temperature --
128 sec, 10% Duty Cycle
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50Vdc,P
out = 1000 W Peak, Pulse Width = 128 sec,
Duty Cycle = 10%, and D= 56%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
105
108
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 12. MTTF versus Junction Temperature --
Mode--S
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50Vdc,P
out = 1000 W Peak, Mode--S Pulse Train,
Pulse Width = 32 sec, Duty Cycle = 6.4%, and D= 59%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
105
108
8
RF Device Data
Freescale Semiconductor, Inc.
MMRF1007HR5 MMRF1007HSR5
Zo=5
Zload
Zsource
f = 1030 MHz
f = 1030 MHz
VDD =50Vdc,I
DQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
Zload
1030 3.93 + j0.09 1.54 + j1.42
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.
Figure 13. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
MMRF1007HR5 MMRF1007HSR5
9
RF Device Data
Freescale Semiconductor, Inc.
Figure 14. MMRF1007HR5(HSR5) Test Circuit Component Layout — 1090 MHz
--
--
--
CUT OUT AREA
BALUN 1
C1
BALUN 2
C2
C6
C9
C5
C8
C7
R2
R1
C12
C29
C4
C3
C28
C27
C26
C25
L2
C15
C16 C17
C18
C19
C20
L1
C13
C21
C22
C23
C24
C10
C11
C14
Table 6. MMRF1007HR5(HSR5) Test Circuit Component Designations and Values — 1090 MHz
Part Description Manufacturer Part Number
Balun 1, 2 Balun Anaren 3A412 Anaren
C1, C5 22 F, 25 V Tantalum Capacitors TPSD226M025R0200 AVX
C2, C6 2.2 F, 50 V 1825 Chip Capacitors C1825C225J5RAC--TU Kemet
C3, C7 0.22 F, 100 V Chip Capacitors C1210C224K1RAC--TU Kemet
C4, C8, C17, C18, C19,
C20, C21, C25
36 pF Chip Capacitors ATC100B360JT500XT ATC
C9 1.0 pF Chip Capacitor ATC100B1R0BT500XT ATC
C12, C16 0.8--8.0 pF Variable Capacitors 27291SL Johanson
C10, C11, C13, C14, C15,
C29
5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC
C22, C26 0.022 F, 100 V Chip Capacitors C1825C223K1GAC Kemet
C23, C24, C27, C28 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
L1, L2 Inductors 3 Turn GA3094--ALC Coilcraft
R1, R2 1000 , 1/4 W Chip Resistors CRCW12061K00FKEA Vishay
PCB CuClad, 0.030,r=2.55 250GX--0300--55--22 Arlon
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF1007HR5 MMRF1007HSR5
TYPICAL CHARACTERISTICS — 1090 MHZ
22
10
0
60
17
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 15. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
16
1000 3000
Gps
20
18
20
100
VDD =50Vdc
IDQ = 150 mA
f = 1090 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
19
21
10
MMRF1007HR5 MMRF1007HSR5
11
RF Device Data
Freescale Semiconductor, Inc.
Zo=5
Zload
Zsource
f = 1090 MHz
f = 1090 MHz
VDD =50Vdc,I
DQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
Zload
1090 2.98 + j3.68 1.51 + j2.02
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.
Figure 16. Series Equivalent Source and Load Impedance — 1090 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF1007HR5 MMRF1007HSR5
PACKAGE DIMENSIONS
MMRF1007HR5 MMRF1007HSR5
13
RF Device Data
Freescale Semiconductor, Inc.
14
RF Device Data
Freescale Semiconductor, Inc.
MMRF1007HR5 MMRF1007HSR5
MMRF1007HR5 MMRF1007HSR5
15
RF Device Data
Freescale Semiconductor, Inc.
16
RF Device Data
Freescale Semiconductor, Inc.
MMRF1007HR5 MMRF1007HSR5
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Dec. 2013 Initial Release of Data Sheet
MMRF1007HR5 MMRF1007HSR5
17
RF Device Data
Freescale Semiconductor, Inc.
Document Number: MMRF1007H
Rev. 0, 12/2013
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