SD211DE/SST211 Series N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max () Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10 1.5 45 @ VGS = 10 V 0.5 2 SD215DE 20 1.5 45 @ VGS = 10 V 0.5 2 SST211 30 1.5 50 @ VGS = 10 V 0.5 2 SST213 10 1.5 50 @ VGS = 10 V 0.5 2 SST215 20 1.5 50 @ VGS = 10 V 0.5 2 Features Benefits Applications Ultra-High Speed Switching--tON: 1 ns Ultra-Low Reverse Capacitance: 0.2 pF Low Guaranteed rDS @ 5 V Low Turn-On Threshold Voltage N-Channel Enhancement Mode High Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching DAC Deglitchers High-Speed Driver Description The SD211DE/SST211 series consists of enhancementmode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for 5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for 10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An TO-206AF (TO-72) S 1 4 2 3 D $ Body Substrate (Case) integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. For similar products see: quad array--SD5000/5400 series and non-Zener protection--SD210DE/214DE. & & %#!" " G $ & Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295. Applications information may also be obtained via FaxBack, request document #70607. Siliconix S-51850--Rev. F, 14-Apr-97 1 SD211DE/SST211 Series Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) " "! 211211 213213 215215 "! 211211 213213 215215 "! 211211 213213 215215 211211 213213 215215 "! 211211 213213 215215 !" !"! 211211 15 213213 215215 Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 125_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes: a. Derate 3 mW/_C above 25_C Specificationsa Limits 211 Series Parameter Symbolb Test Conditionsb Typc Min Max 213 Series Min Max 215 Series Min Max Unit Static VGS = VBS = 0 V, ID = 10 mA 35 30 VGS = VBS = -5 V, ID = 10 nA 30 10 10 20 V(BR)SD VGD = VBD = -5 V, IS = 10 nA 22 10 10 20 Drain-Substrate Breakdown Voltage V(BR)DBO VGB = 0 V, ID = 10 nA , Source Open 35 15 15 Source-Substrate Breakdown Voltage V(BR)SBO VGB = 0 V, IS = 10 mA , Drain Open 35 15 15 Drain-Source B kd Breakdown V Voltage l V(BR)DS Source-Drain Breakdown Voltage V VDS = 10 V 0.4 VDS = 20 V 0.9 VSD = 10 V 0.5 VSD = 20 V 1 Drain-Source L k Leakage IDS(off) VGS = VBS = -5 V Source-Drain L k Leakage ISD(off) VGD = VBD = -5 V Gate Leakage IGBS VDB = VSB = 0 V, VGB = 30V 0.01 VGS(th) VDS = VGS , ID = 1 mA VSB = 0 V 0.8 Threshold Voltage Drain-Source On-Resistance On Resistance 2 rDS(on) VSB = 0 V ID = 10 10 10 10 10 nA 10 100 0.5 1.5 100 0.1 1.5 100 0.1 1.5 VGS = 5 V (SD Series) 58 70 70 70 VGS = 5 V (SST Series) 60 75 75 75 VGS = 10 V (SD Series) 38 45 45 45 VGS = 10 V (SST Series) 40 50 50 50 VGS = 15 V 30 VGS = 20 V 26 VGS = 25 V 24 V W Siliconix S-51850--Rev. F, 14-Apr-97 SD211DE/SST211 Series Specificationsa Limits 211 Series Parameter Symbolb Conditionsb Test gfs VDS = 10 V VSB = 0 V mA f = 1 kHz ID = 20 mA, Typc Min Max 213 Series Min Max 215 Series Min Max Unit Dynamic Forward Transconductance gos Gate Node Capacitance C(GS+GD+GB) Drain Node Capacitance C(GD+DB) Source Node C Capacitance i C(GS+SB) Reverse Transfer Capacitance Crss SD Series 11 10 10 10 SST Series 10.5 9 9 9 All 0.9 SD Series VDS = 10 V f = 1 MHz VGS = VBS = -15 15 V mS 2.5 3.5 3.5 3.5 1.1 1.5 1.5 1.5 3.7 5.5 5.5 5.5 SST Series 4.2 SD Series 0.2 0.5 0.5 0.5 0.5 1 1 1 0.6 1 1 1 pF Switching Turn-On Time Turn-Off Time td(on) tr td(off) tf SD Series S i O Only l VSB = 0 V, VIN 0 to 5 V, RG = 25 VDD = 5 V,, RL = 680 2 6 Notes: a. TA = 25_C unless otherwise noted. b. B is the body (substrate), and (BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Siliconix S-51850--Rev. F, 14-Apr-97 ns DMCBA 3 SD211DE/SST211 Series Typical Characteristics Leakage Current vs. Applied Voltage 10 nA ID (off) @ VGS = VBG = -5 V IS(off) @ VGD = VBD = -5V ISBO @ VGB = 0 V, Drain Open 300 1 nA VGS = 4 V 240 Leakage rDS(on) - Drain-Source On-Resistance (W On-Resistance vs. Gate-Source Voltage 180 IS(off) 100 pA 5V 10 pA 60 10 V IGSS (Diode) 1 pA 0 0 4 8 12 16 20 0 4 8 VSB - Body-Source Voltage (V) On-Resistance vs. Temperature 20 g fs - Forward Transconductance (mS) rDS(on) - Drain-Source On-Resistance ( W ID = 5 mA, VBS = 0 V 80 VGS = 5 V 60 10 V 15 V 40 20 V 20 0 16 20 Common-Source Forward Transconductance vs. Drain Current VDS = 15 V VBS = 0 V 16 TA = 55_C 12 25_C 8 125_C 4 0 -60 -20 20 60 100 1 140 10 5 Threshold Voltage vs. Temperature Output Conductance vs. Drain Current 1.0 VGS = VDS = VTH ID = 1 mA VBS = -10 V -5 V 2 -0.5 V -1 V 1 g os - Output Conductance (mS) VBS = 0 V f = 1 kHz 4 3 100 ID - Drain Current (mA) TA - Temperature (_C) V GS(th) - Gate-Source Threshold Voltage (V) 12 Applied Voltage (V) 100 0.8 VDS = 5 V 0.6 10 V 0.4 15 V 0.2 0V 0 -60 0 -20 20 60 TA - Temperature (_C) 4 ID(off) ISBO 120 100 140 0 4 8 12 16 20 ID - Drain Current (mA) Siliconix S-51850--Rev. F, 14-Apr-97 SD211DE/SST211 Series Typical Characteristics (Cont'd) Leakage Current vs. Temperature 100 ID(off) @ VGS = VBS = -5 V, VDS = 10 V IS(off) @ VGD = VBD = -5 V, VSD = 10 V IGSS @ VGS = 10 V ISBO @ VSB = 10 V Drain Open VGS = VDS = VTH ID = 1 mA TA = 25_C 4 3 Leakage (nA) V GS(th) - Gate-Source Threshold Voltage (V) Threshold Voltage vs. Substrate-Source Voltage 5 H 2 ID(off) 10 L ISBO IGSS (Diode) 1 0 1 0 -8 -4 -12 -16 25 -20 50 VBS - Body-Source Voltage (V) 75 100 mA VDS = 10 V, f = 1 MHz VGS = VBS Body Leakage Current vs. Drain-Body Voltage I B - Body Leakage 1 mA 6 C(GS+SB) C(GS+GD+GB) 2 4 8 10 nA 1 nA 1 mA 10 pA C(DG) 0 ID = 13 mA 100 nA 100 pA C(GD+DB) 0 125 10 mA 8 4 100 TA - Temperature (_C) Capacitance vs. Gate-Source Voltage 10 Capacitance (pF) IS(off) 12 16 1 pA 20 0 4 8 VGS - Gate-Source Voltage (V) 12 16 20 VDB (V) Input Admittance Forward Admittance 100 100 VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C gfs 10 (mS) (mS) 10 bis 1 1 -bfs gis 0.1 0.1 100 200 500 f - Frequency (MHz) Siliconix S-51850--Rev. F, 14-Apr-97 1000 100 200 500 1000 f - Frequency (MHz) 5 SD211DE/SST211 Series Typical Characteristics Reverse Admittance Output Admittance 1 100 VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C brs 0.1 (mS) (mS) 10 +grg -grg 0.01 bog 1 gog 0.001 0.1 200 100 100 1000 500 200 f - Frequency (MHz) f - Frequency (MHz) Switching Characteristics 700 1000 500 Output Characteristics 50 VBS = 0 V TA = 25_C 600 I D - Drain Current (mA) 40 R L ( 500 400 300 200 VGS = 5 V 30 4V 20 3V 10 100 2V 0 0 0 1 2 3 4 5 6 7 0 tf - Fall Time (ns) 8 4 12 16 20 VDS - Drain-Source Voltage (V) Switching Time Test Circuit To Scope +VDD +5 V 510 VIN 51 RL VOUT To Scope 50% 0V td(on) Input pulse: td, tr < 1 ns Pulse width: 100 ns Rep rate: 1 MHz +VDD Sampling Scope VOUT tr < 360 ps RIN = 1 M CIN = 2 pF BW = 500 MHz 6 VIN td(off) 90% 50% 10% 0V tr tf Siliconix S-51850--Rev. F, 14-Apr-97