SD211DE/SST211 Series
Siliconix
S-51850—Rev. F, 14-Apr -97 1
N-Channel Lateral DMOS FETs
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
Product Summary
Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max () Crss Max (pF) tON Max (ns)
SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2
SD213DE 10 1.5 45 @ VGS = 10 V 0.5 2
SD215DE 20 1.5 45 @ VGS = 10 V 0.5 2
SST211 30 1.5 50 @ VGS = 10 V 0.5 2
SST213 10 1.5 50 @ VGS = 10 V 0.5 2
SST215 20 1.5 50 @ VGS = 10 V 0.5 2
Features Benefits Applications
Ultra-High Speed Switching—tON: 1 ns
Ultra-Low Reverse Capacitance: 0.2 pF
Low Guaranteed rDS @ 5 V
Low Turn-On Threshold Voltage
N-Channel Enhancement Mode
High Speed System Performance
Low Insertion Loss at High Frequencies
Low Transfer Signal Loss
Simple Driver Requirement
Single Supply Operation
Fast Analog Switch
Fast Sample-and-Holds
Pixel-Rate Switching
DAC Deglitchers
High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancement-
mode MOSFETs designed for high speed low-glitch
switching in audio, video, and high-frequency
applications. The SD211 may be used for 5-V analog
switching or as a high speed driver of the SD214. The
SD214 is normally used for 10-V analog switching.
These MOSFETs utilize lateral construction to achieve
low capacitance and ultra-fast switching speeds. An
integrated Zener diode provides ESD protection. These
devices feature a poly-silicon gate for manufacturing
reliability.
For similar products see: quad array—SD5000/5400
series and non-Zener protection—SD210DE/214DE.
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G
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TO-206AF
(TO-72) Body
Substrate
(Case)
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Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295.
Applications information may also be obtained via FaxBack, request document #70607.
SD211DE/SST211 Series
2 Siliconix
S-51850—Rev. F, 14-Apr -97
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
 "  "!   211211 
213213 
215215 
 "!    211211         
213213        
215215        
"!   211211             
213213            
215215            
!"   211211             
213213            
215215            
"!     211211             
213213            
215215            
!"!     21121115           
213213            
215215           
Drain Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 seconds) 300_C. . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 125_C. . . . . . . . . . . . . . . . . .
Power Dissipationa300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Derate 3 mW/_C above 25_C
Specificationsa
Limits
211 Series 213 Series 215 Series
Parameter SymbolbTest ConditionsbTypcMin Max Min Max Min Max Unit
Static
Drain-Source
Bkd Vl
V(BR)DS
VGS = VBS = 0 V, ID = 10 mA 35 30
Breakdown Voltage
V
(BR)DS VGS = VBS = –5 V, ID = 10 nA 30 10 10 20
Source-Drain
Breakdown Voltage V(BR)SD VGD = VBD = –5 V, IS = 10 nA 22 10 10 20 V
Drain-Substrate
Breakdown Voltage V(BR)DBO VGB = 0 V, ID = 10 nA ,
Source Open 35 15 15 
V
Source-Substrate
Breakdown Voltage V(BR)SBO VGB = 0 V, IS = 10 mA ,
Drain Open 35 15 15 
Drain-Source
Lk
IDS(off)
VGS =V
BS =
–
5V
VDS = 10 V 0.4 10 10
Leakage
I
DS(off)
V
GS =
V
BS = –
5
V
VDS = 20 V 0.9 10
Source-Drain
Lk
ISD(off)
VGD =V
BD =
–
5V
VSD = 10 V 0.5 10 10 nA
Leakage
I
SD(off)
V
GD =
V
BD = –
5
V
VSD = 20 V 1 10
Gate Leakage IGBS VDB = VSB = 0 V, VGB = 30V 0.01 100 100 100
Threshold Voltage VGS(th) VDS = VGS , ID = 1 mA
VSB = 0 V 0.8 0.5 1.5 0.1 1.5 0.1 1.5 V
VGS = 5 V
(SD Series) 58 70 70 70
W
VGS = 5 V
(SST
Series) 60 75 75 75
W
Drain-Source
On Resistance
rDS
(
on
)
VSB = 0 V
ID=
VGS = 10 V
(SD Series) 38 45 45 45
W
O
n-Res
i
stance
rDS(on)
ID =

V
GS = 10 V
(SST
Series) 40 50 50 50
W
VGS = 15 V 30
VGS = 20 V 26
VGS = 25 V 24
SD211DE/SST211 Series
Siliconix
S-51850—Rev. F, 14-Apr-97 3
Specificationsa
Limits
211 Series 213 Series 215 Series
Parameter SymbolbTest ConditionsbTypcMin Max Min Max Min Max Unit
Dynamic
Forward
gfs
VDS = 10 V SD Series 11 10 10 10
Forward
Transconductance gfs
VDS
=
10
V
VSB = 0 V
ID=20mA f=1kHz
SST Series 10.5 9 9 9 mS
Transconductance
gos ID = 20 mA, f = 1 kHz All 0.9
Gate Node
Capacitance C(GS+GD+GB) 2.5 3.5 3.5 3.5
Drain Node
Capacitance C(GD+DB) VDS = 10 V
f=1MHz
SD Series 1.1 1.5 1.5 1.5
pF
Source Node
Ci
C(GS+SB)
f
=
1
MHz
VGS = VBS = –15 V 3.7 5.5 5.5 5.5 pF
Capacitance
C
(GS+SB)
VGS
V
BS
15
V
SST Series 4.2
Reverse Transfer
Capacitance Crss SD Series 0.2 0.5 0.5 0.5
Switching
Turn
-
On Time
td(on)
SD S i O l
0.5 1 1 1
T
urn-
O
n
Ti
me trSD Series Only
VSB
=
0 V, VIN 0 to 5 V, RG
=
25
0.6 1 1 1
ns
Turn
-
Off Time
td(off)
V
SB =
0
V
,
V
IN
0
to
5
V
,
R
G =
25
VDD = 5 V, RL = 680 2
ns
Turn
-
Off
Time
tf
DD ,L
6
Notes:
a. TA = 25_C unless otherwise noted. DMCBA
b. B is the body (substrate), and (BR) is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
SD211DE/SST211 Series
4 Siliconix
S-51850—Rev. F, 14-Apr-97
Typical Characteristics
Leakage Current vs. Applied Voltage
On-Resistance vs. Temperature
Threshold Voltage vs. Temperature
On-Resistance vs. Gate-Source Voltage
Common-Source Forward Transconductance
vs. Drain Current
Applied Voltage (V)
020
I
SBO
IGSS (Diode)
ID (off) @ VGS = VBG = –5 V
IS(off) @ VGD = VBD = –5V
ISBO @ VGB = 0 V, Drain Open
10 nA
1 nA
100 pA
10 pA
1 pA
IS(off)
Leakage
300
04812 20
240
180
60
016
120 5 V
10 V
VGS = 4 V
1 100
20
16
12
8
4
010
25_C
VDS = 15 V
VBS = 0 V
TA = 55_C
125_C
100
–60 6020–20 100 140
80
60
40
20
0
10 V
15 V
20 V
rDS(on) – Drain-Source On-Resistance (
5
–60 60 10020–20 140
4
3
2
1
0
–5 V
–1 V
0 V
VGS = VDS = VTH
ID = 1 mA
VBS = –10 V
ID = 5 mA, VBS = 0 V
4 8 12 16
TA – Temperature (_C)
TA – Temperature (_C)
ID – Drain Current (mA)
gfs – Forward Transconductance (mS)
rDS(on) – Drain-Source On-Resistance (
VGS = 5 V
Output Conductance vs. Drain Current
1.0
0204
0.8
0.6
0.4
0.2
0
VDS = 5 V
15 V
VBS = 0 V
f = 1 kHz
ID – Drain Current (mA)
gos
81216
– Output Conductance (mS)
– Gate-Source Threshold Voltage (V)VGS(th)
VSB – Body-Source Voltage (V)
ID(off)
10 V
–0.5 V
WW
SD211DE/SST211 Series
Siliconix
S-51850—Rev. F, 14-Apr-97 5
Typical Characteristics (Cont’d)
Threshold Voltage vs. Substrate-Source Voltage Leakage Current vs. Temperature
Input Admittance Forward Admittance
Capacitance vs. Gate-Source Voltage Body Leakage Current vs. Drain-Body Voltage
5
0 –4 –20
4
3
2
1
0
H
L
VGS = VDS = VTH
ID = 1 mA
TA = 25_C
100
10
125 50 75 100 125
ISBO
ID(off)
IS(off)
IGSS
(Diode)
Leakage (nA)
10
04 20
8
6
4
2
0
V
DS = 10 V, f = 1 MHz
VGS = VBS
Capacitance (pF)
C(GS+SB)
C(GS+GD+GB)
C(GD+DB)
C(DG)
012168420
V
DB (V)
ID = 13 mA
1 mA
– Body Leakage
IB
100
10
1
0.1
100 1000
bis
gis
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
100
10
1
0.1 100 1000
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
gfs
–bfs
TA – Temperature (_C)
VGS – Gate-Source Voltage (V)
f – Frequency (MHz) f – Frequency (MHz)
–8 –12 –16
81216
200 500 200 500
– Gate-Source Threshold Voltage (V)VGS(th)
ID(off) @ VGS = VBS = –5 V, VDS = 10 V
IS(off) @ VGD = VBD = –5 V, VSD = 10 V
IGSS @ VGS = 10 V
ISBO @ VSB = 10 V
Drain Open
100 mA
100 nA
1 nA
100 pA
1 pA
10 mA
1 mA
10 nA
10 pA
VBS – Body-Source Voltage (V)
SD211DE/SST211 Series
6 Siliconix
S-51850—Rev. F, 14-Apr-97
Typical Characteristics
Reverse Admittance Output Admittance
Switching Characteristics Output Characteristics
1
0.1
0.01
0.001100 1000
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_Cbrs
+grg
–grg
100
10
1
0.1 100 1000
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
700
600
500
001 7
400
300
200
100
23456
tf – Fall Time (ns)
RL(
50
04 20
40
30
20
10
0
4 V
3 V
2 V
VBS = 0 V
TA = 25_C
VGS = 5 V
bog
gog
f – Frequency (MHz) f – Frequency (MHz)
VDS – Drain-Source Voltage (V)
– Drain Current (mA)
ID
200 500 200 500
81216
Switching Time Test Circuit
510 RL
51
VIN
To
Scope +VDD
VOUT
To
Scope
0 V
50%
10%
90%
td(on) td(off)
trtf
+5 V
0 V
+VDD
VIN
VOUT
Input pulse: td, tr < 1 ns
Pulse width: 100 ns
Rep rate: 1 MHz
Sampling Scope
tr < 360 ps
RIN = 1 M
CIN = 2 pF
BW = 500 MHz
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