BC856W SERIES
BC857W SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856W and
BC857W Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERminiTM surface mount package,
designed for general purpose switching and amplifier
applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.
MAXIMUM RATINGS: (TA=25°C) SYMBOL BC857W BC856W UNITS
Collector-Base Voltage VCBO 50 80 V
Collector-Emitter Voltage VCEO 45 65 V
Emitter-Base Voltage VEBO
5.0 V
Continuous Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Power Dissipation PD 275 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 455 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=30V 15 nA
ICBO V
CB=30V, TA=150°C 4.0 μA
IEBO V
EB=5.0V 100 nA
BVCBO I
C=10μA (BC857W) 50 V
BVCBO I
C=10μA (BC856W) 80 V
BVCEO I
C=10mA (BC857W) 45 V
BVCEO I
C=10mA (BC856W) 65 V
BVEBO I
E=10μA 5.0 V
VCE(SAT) I
C=10mA, IB=0.5mA 0.30 V
VCE(SAT) I
C=100mA, IB=5.0mA 0.65 V
VBE(SAT) I
C=100mA, IB=5mA 0.95 V
VBE(ON) I
C=2.0mA, VCE=5.0V 0.60 0.75 V
VBE(ON) I
C=10mA, VCE=5.0V 0.82 V
Cib V
EB=0.5V, IC=0, f=1.0MHz 12 pF
Cob V
CB=10V, IE=0, f=1.0MHz 5.0 pF
fT V
CE=5.0V, IC=10mA, f=100MHz 100 MHz
NF VCE=5.0V, IC=200μA,
R
S=2.0KΩ, f=1.0KHz, BW=200Hz 10 dB
BC856AW BC856BW
BC857AW BC857BW BC857CW
MIN MAX MIN MAX MIN MAX
hFE V
CE=5.0V, IC=2.0mA 125 250 220 475 420 800
SOT-323 CASE
R1 (20-November 2009)
www.centralsemi.com