DMC1018UPD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Device V(BR)DSS Q1 12V Q2 -20V Features and Benefits RDS(ON) ID TA = +25C 17m @ VGS = 4.5V 9.5A 25m @ VGS = 2.5V 7.8A 32m @ VGS = -4.5V -6.9A 53m @ VGS = -2.5V -5.4A Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(ON) - Minimizes On State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q101) for High Reliability. https://www.diodes.com/quality/product-definitions/ Description and Applications This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch. Notebook Battery Power Management DC-DC Converters Loadswitch Mechanical Data (R) Case: PowerDI 5060-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Below Weight: 0.097 grams (Approximate) PowerDI5060-8 (Type C) D1 G1 Pin1 Top View Bottom View D2 G2 S1 S1 D1 G1 D1 S2 D2 G2 D2 S2 Q1 N-Channel MOSFET Q2 P-Channel MOSFET Top View Pin Configuration Ordering Information (Note 4) Part Number DMC1018UPD-13 Notes: Case PowerDI5060-8 (Type C) Packaging 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. PowerDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 3 - 2 1 of 11 www.diodes.com October 2019 (c) Diodes Incorporated DMC1018UPD Marking Information D1 D1 D2 D2 = Manufacturer's Marking C1018UD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 - 53) C1018UD YY WW S1 G1 S2 G2 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS VGSS Continuous Drain Current (Note 5) VGS = 4.5V Q1 Value 12 8 Q2 Value -20 12 Units V V Steady State TA = +25C TA = +70C ID 9.5 7.6 -6.9 -5.5 A t<10s TA = +25C TA = +70C ID 13.0 10.4 -9.4 -7.5 A Maximum Body Diode Forward Current (Note 5) IS 2.5 -2.5 A Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM 60 -40 A Avalanche Current (Note 6) L = 0.1mH Avalanche Energy (Note 6) L = 0.1mH IAS EAS 20 25 -17 14 A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Symbol TA = +25C TA = +70C Steady State t<10s Thermal Resistance, Junction to Case RJA RJC TJ, TSTG Operating and Storage Temperature Range Notes: PD Value 2.3 1.5 54 29 6.5 -55 to +150 Units W C/W C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25C. DMC1018UPD Document number: DS38533 Rev. 3 - 2 2 of 11 www.diodes.com October 2019 (c) Diodes Incorporated DMC1018UPD Electrical Characteristics Q1 N-Channel (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS 12 IDSS IGSS 1 V A 100 nA VGS(TH) 0.6 0.8 1.5 V RDS(ON) 8 17 11 25 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD 0.7 1.2 Ciss 1525 Output Capacitance Coss 329 Reverse Transfer Capacitance Gate Resistance Crss Total Gate Charge (VGS = 4.5V) RG Qg 303 1.6 17.1 Total Gate Charge (VGS = 8V) Gate-Source Charge Qg 30.4 Qgs 2.6 Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Qgd 4.3 6.6 Turn-On Rise Time tD(ON) tR 10.8 Turn-Off Delay Time tD(OFF) 41.5 14.3 -- 2.3 -- Gate-Drain Charge Turn-On Delay Time Body Diode Reverse Recovery Time tRR -- Body Diode Reverse Recovery Charge QRR -- Turn-Off Fall Time Notes: tF 21.9 m Test Condition VGS = 0V, ID = 250A VDS = 12V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 11.8A VGS = 2.5V, ID = 9.8A V VGS = 0V, IS = 2.9A pF VDS = 6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 6V, ID = 11.8A ns VDD = 6V, RL = 6 VGS = 4.5V, RG = 6, ID = 1A ns IF = 11.8A, di/dt = 100A/s nC IF = 11.8A, di/dt = 100A/s 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMC1018UPD Document number: DS38533 Rev. 3 - 2 3 of 11 www.diodes.com October 2019 (c) Diodes Incorporated DMC1018UPD Electrical Characteristics Q2 P-Channel (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS -20 IDSS IGSS -1 V A 100 nA VGS(TH) -0.6 -0.8 -1.5 V RDS(ON) 22 32 31 53 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD -0.7 -1.2 Ciss Coss 866 167 Output Capacitance Reverse Transfer Capacitance Gate Resistance Crss 131 4.9 Total Gate Charge (VGS = -4.5V) RG Qg 8.6 Total Gate Charge (VGS = -8V) Gate-Source Charge Qg 19 Qgs 1.5 Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Qgd 2.5 5.8 Turn-On Rise Time tD(ON) tR 7.7 Turn-Off Delay Time tD(OFF) 28.1 9.8 -- 2.7 -- Gate-Drain Charge Turn-On Delay Time Body Diode Reverse Recovery Time tRR -- Body Diode Reverse Recovery Charge QRR -- Turn-Off Fall Time Notes: tF 14.6 m Test Condition VGS = 0V, ID = -250A VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -8.9A VGS = -2.5V, ID = -6.9A V VGS = 0V, IS = -2.9A pF VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -6V, ID = -8.9A ns VDD = -6V, RL = 6 VGS = -4.5V, RG = 6, ID = -1A ns IF = -8.9A, di/dt = -100A/s nC IF = -8.9A, di/dt = -100A/s 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMC1018UPD Document number: DS38533 Rev. 3 - 2 4 of 11 www.diodes.com October 2019 (c) Diodes Incorporated DMC1018UPD Typical Characteristics - N-CHANNEL 30 30.0 VDS=5V VGS=4.5V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS=4.0V VGS=3.5V 20.0 VGS=3.0V 15.0 VGS=2.5V VGS=2.0V 10.0 20 15 TA=150 10 TA=125 VGS=1.5V 5 5.0 VGS=1.2V VGS=1.3V 0 0.5 1 1.5 2 2.5 0 3 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) 14 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) TA=-55 0 0.0 13 12 VGS=2.5V 11 10 9 8 VGS=4.5V 7 6 5 18 16 14 12 10 ID=11.8A 8 ID=9.8A 6 4 0 5 10 15 20 25 0 30 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 16 2 VGS=4.5V 14 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) TA=25 TA=85 TA=150 12 10 TA=125 TA=85 8 TA=25 6 TA=-55 4 2 VGS=2.5V, ID=9.8A 1.5 1 VGS=4.5V, ID=11.8A 0.5 0 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs Drain Current and Junction Temperature DMC1018UPD Document number: DS38533 Rev. 3 - 2 5 of 11 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature October 2019 (c) Diodes Incorporated 0.02 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMC1018UPD 0.018 0.016 0.014 VGS=2.5V, ID=9.8A 0.012 0.01 0.008 VGS=4.5V, ID=11.8A 0.006 0.004 0.002 1 ID=1mA 0.8 0.6 ID=250A 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 10000 30 VGS=0V CT, JUNCTION CAPACITANCE (pF) f=1MHz 25 IS, SOURCE CURRENT (A) 150 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs Junction Temperature TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Junction Temperature 20 15 10 TA=150 TA=85 TA=125 5 TA=25 Ciss 1000 Coss Crss 100 TA=-55 0 0 0.3 0.6 0.9 10 1.2 1.5 0 2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs Current 4 6 8 10 12 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 8 100 RDS(ON) Limited ID, DRAIN CURRENT (A) 6 VGS (V) 125 4 VDS=6V, ID=11.8A 2 0 10 PW =10s PW =100s PW =1ms PW =10ms PW =100ms 1 PW =1s TJ(Max)=150 TC=25 Single Pulse DUT on Infinite Heatsink VGS=4.5V 0.1 0 5 10 15 20 25 30 35 DMC1018UPD Document number: DS38533 Rev. 3 - 2 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge 6 of 11 www.diodes.com October 2019 (c) Diodes Incorporated DMC1018UPD Typical Characteristics - P-CHANNEL 30.0 10 VDS=-5V VGS=-3.0V 8 VGS=-2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 20.0 VGS=-3.5V VGS=-4.0V 15.0 VGS=-4.5V VGS=-2.0V 10.0 6 4 TA=150 2 5.0 VGS=-1.5V VGS=-1.3V TA=-55 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 0.5 1 1.5 2 2.5 3 VGS, GATE-SOURCE VOLTAGE (V) Figure 14. Typical Transfer Characteristic VDS, DRAIN-SOURCE VOLTAGE(V) Figure 13. Typical Output Characteristic 0.2 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA=25 TA=125 0.0 0.05 VGS=-2.5V 0.04 0.03 0.02 VGS=-4.5V 0.01 0.18 0.16 0.14 0.12 0.1 0.08 ID=-8.9A 0.06 0.04 0.02 0 ID=-6.9A 0 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 16. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 15. Typical On-Resistance vs Drain Current and Gate Voltage 0.05 2.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA=85 VGS=-4.5V 0.04 TA=150 0.03 TA=85 TA=125 TA=25 0.02 TA=-55 0.01 0 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT(A) Figure 17. Typical On-Resistance vs Drain Current and Temperature DMC1018UPD Document number: DS38533 Rev. 3 - 2 7 of 11 www.diodes.com 2 VGS=-4.5V, ID=-8.9A 1.5 1 VGS=-2.5V, ID=-6.9A 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 18. On-Resistance Variation with Temperature October 2019 (c) Diodes Incorporated DMC1018UPD 1.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.06 0.05 VGS=-2.5V, ID=-6.9A 0.04 0.03 0.02 VGS=-4.5V, ID=-8.9A 0.01 1.2 0.9 ID=-1mA 0.6 ID=-250A 0.3 0 0 -50 -25 0 25 50 75 100 125 -50 150 0 25 50 75 100 125 150 10000 20 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS=0V 18 16 IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE () Figure 20. Gate Threshold Variation vs Junction Temperature TJ, JUNCTION TEMPERATURE () Figure 19. On-Resistance Variation with Temperature 14 12 10 TA=150 8 6 TA=125 4 TA=25 TA=85 2 TA=-55 Ciss 1000 Coss 100 0 Crss 10 0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 VDS, DRAIN-SOURCE VOLTAGE(V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 21. Diode Forward Voltage vs Current Figure 22. Typical Junction Capacitance 10 100 PW =10s RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VDS=-6V, ID=-8.9A VGS (V) 6 4 10 PW =100s PW =1ms PW =10ms 2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 Document number: DS38533 Rev. 3 - 2 TJ(Max)=150 TC=25 Single Pulse DUT on Infinite Heatsink VGS=-4.5V 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24. SOA, Safe Operation Area Qg (nC) Figure 23. Gate Charge DMC1018UPD PW =100ms PW =1s 1 8 of 11 www.diodes.com October 2019 (c) Diodes Incorporated DMC1018UPD r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.7 D=0.5 0.1 D=0.3 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RJC (t)=r(t) * RJC RJC=6.5/W Duty Cycle, D=t1/t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 25. Transient Thermal Resistance DMC1018UPD Document number: DS38533 Rev. 3 - 2 9 of 11 www.diodes.com October 2019 (c) Diodes Incorporated DMC1018UPD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) D D1 0(4x) c x E1 A1 E y Seating Plane e 1 01(4x) O 1.000 Depth 0.07 0.030 b1(8x) DETAIL A e/2 b(8x) 1 b2(2x) D3 L k A k1 E2 L4 D2 M D2 La DETAIL A L1 PowerDI5060-8 (Type C) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 e 1.27BSC k 1.27 k1 0.56 L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 0.125 M 3.50 3.71 3.605 x 1.400 y 1.900 10 12 11 1 6 8 7 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) X4 8 Dimensions X3 C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y1 X2 Y2 Y3 G1 X1 Y(4x) 1 X DMC1018UPD Document number: DS38533 Rev. 3 - 2 C Value (in mm) 1.270 0.660 0.820 0.610 3.910 1.650 1.650 4.420 1.270 1.020 3.810 6.610 G 10 of 11 www.diodes.com October 2019 (c) Diodes Incorporated DMC1018UPD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2019, Diodes Incorporated www.diodes.com DMC1018UPD Document number: DS38533 Rev. 3 - 2 11 of 11 www.diodes.com October 2019 (c) Diodes Incorporated