DMC1018UPD
Document number: DS38533 Rev. 3 - 2
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DMC1018UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Device
V(BR)DSS
RDS(ON)
ID
TA = +25°C
Q1
12V
17mΩ @ VGS = 4.5V
9.5A
25mΩ @ VGS = 2.5V
7.8A
Q2
-20V
32mΩ @ VGS = -4.5V
-6.9A
53mΩ @ VGS = -2.5V
-5.4A
Description and Applications
This new generation Complementary Pair Enhancement Mode
MOSFET has been designed to minimize RDS(ON) and yet maintain
superior switching performance. This device is ideal for use in
Notebook battery power management and Loadswitch.
Notebook Battery Power Management
DC-DC Converters
Loadswitch
Features and Benefits
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q101, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
https://www.diodes.com/products/automotive/automotive-
products/.
This part is qualified to JEDEC standards (as references in
AEC-Q101) for High Reliability.
https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: PowerDI®5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – 100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 0.097 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMC1018UPD-13
PowerDI5060-8 (Type C)
2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Bottom View
Top View
Pin Configuration
Top View
Pin1
S1
D2
D1
G2
D1
D2
G1
S2
Q1 N-Channel MOSFET
Q2 P-Channel MOSFET
D1
S1
G1
D2
S2
G2
e3
PowerDI5060-8 (Type C)
PowerDI is a registered trademark of Diodes Incorporated.
DMC1018UPD
Document number: DS38533 Rev. 3 - 2
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DMC1018UPD
Marking Information
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Q1 Value
Q2 Value
Units
Drain-Source Voltage
VDSS
12
-20
V
Gate-Source Voltage
VGSS
±8
±12
V
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
9.5
7.6
-6.9
-5.5
A
t<10s
TA = +25°C
TA = +70°C
ID
13.0
10.4
-9.4
-7.5
A
Maximum Body Diode Forward Current (Note 5)
IS
2.5
-2.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
60
-40
A
Avalanche Current (Note 6) L = 0.1mH
IAS
20
-17
A
Avalanche Energy (Note 6) L = 0.1mH
EAS
25
14
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
2.3
W
TA = +70°C
1.5
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
54
°C/W
t<10s
29
Thermal Resistance, Junction to Case
RθJC
6.5
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C .
S1
D1
G1
S2
G2
D1
D2
D2
C1018UD
YY
WW
= Manufacturer’s Marking
C1018UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 - 53)
DMC1018UPD
Document number: DS38533 Rev. 3 - 2
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DMC1018UPD
Electrical Characteristics Q1 N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
12
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 12V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
0.6
0.8
1.5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
8
17
mΩ
VGS = 4.5V, ID = 11.8A
11
25
VGS = 2.5V, ID = 9.8A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = 2.9A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
1525
pF
VDS = 6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
329
Reverse Transfer Capacitance
Crss
303
Gate Resistance
RG
1.6
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Qg
17.1
nC
VDS = 6V, ID = 11.8A
Total Gate Charge (VGS = 8V)
Qg
30.4
Gate-Source Charge
Qgs
2.6
Gate-Drain Charge
Qgd
4.3
Turn-On Delay Time
tD(ON)
6.6
ns
VDD = 6V, RL = 6Ω
VGS = 4.5V, RG = 6Ω, ID = 1A
Turn-On Rise Time
tR
10.8
Turn-Off Delay Time
tD(OFF)
41.5
Turn-Off Fall Time
tF
21.9
Body Diode Reverse Recovery Time
tRR
—
14.3
—
ns
IF = 11.8A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
—
2.3
—
nC
IF = 11.8A, di/dt = 100A/μs
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMC1018UPD
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DMC1018UPD
Electrical Characteristics Q2 P-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -16V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
-0.6
-0.8
-1.5
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
22
32
mΩ
VGS = -4.5V, ID = -8.9A
31
53
VGS = -2.5V, ID = -6.9A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -2.9A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
866
pF
VDS = -6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
167
Reverse Transfer Capacitance
Crss
131
Gate Resistance
RG
4.9
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Qg
8.6
nC
VDS = -6V, ID = -8.9A
Total Gate Charge (VGS = -8V)
Qg
19
Gate-Source Charge
Qgs
1.5
Gate-Drain Charge
Qgd
2.5
Turn-On Delay Time
tD(ON)
5.8
ns
VDD = -6V, RL = 6Ω
VGS = -4.5V, RG = 6Ω, ID = -1A
Turn-On Rise Time
tR
7.7
Turn-Off Delay Time
tD(OFF)
28.1
Turn-Off Fall Time
tF
14.6
Body Diode Reverse Recovery Time
tRR
—
9.8
—
ns
IF = -8.9A, di/dt = -100A/μs
Body Diode Reverse Recovery Charge
QRR
—
2.7
—
nC
IF = -8.9A, di/dt = -100A/μs
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMC1018UPD
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DMC1018UPD
Typical Characteristics - N-CHANNEL
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0 0.5 1 1.5 2 2.5 3
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS=1.2V
VGS=1.3V
VGS=1.5V
VGS=2.0V
VGS=2.5V
VGS=3.0V
VGS=3.5V
VGS=4.0V
VGS=4.5V
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS=5V
TA=-55℃
TA=25℃
TA=85℃
TA=125℃
TA=150℃
4
5
6
7
8
9
10
11
12
13
14
0 5 10 15 20 25 30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(mΩ)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current
and Gate Voltage
VGS=2.5V
VGS=4.5V
6
8
10
12
14
16
18
20
0 2 4 6 8
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(mΩ)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID=11.8A
ID=9.8A
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(mΩ)
ID, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs Drain Current and
Junction Temperature
VGS=4.5V
TA=-55℃
TA=25℃
TA=85℃ TA=125℃
TA=150℃
0
0.5
1
1.5
2
-50 -25 025 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
VGS=4.5V, ID=11.8A
VGS=2.5V, ID=9.8A
DMC1018UPD
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0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50 -25 025 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
VGS=2.5V, ID=9.8A
VGS=4.5V, ID=11.8A
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25 025 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
ID=250μA
ID=1mA
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2 1.5
IS, SOURCE CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
VGS=0V
TA=-55℃
TA=25℃
TA=85℃
TA=125℃
TA=150℃
10
100
1000
10000
0 2 4 6 8 10 12
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
0 5 10 15 20 25 30 35
VGS (V)
Qg (nC)
Figure 11. Gate Charge
VDS=6V, ID=11.8A
0.1
1
10
100
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
TJ(Max)=150
℃
TC=25℃
Single Pulse
DUT on Infinite Heatsink
VGS=4.5V
R
DS(ON)
Limited
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100μs
PW=10μs
DMC1018UPD
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DMC1018UPD
Typical Characteristics - P-CHANNEL
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE(V)
Figure 13. Typical Output Characteristic
VGS=-1.3V
VGS=-1.5V
VGS=-2.0V
VGS=-2.5V
VGS=-3.0V
VGS=-3.5V
VGS=-4.0V
VGS=-4.5V
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 14. Typical Transfer Characteristic
VDS=-5V
TA=-55℃
TA=25℃
TA=85℃
TA=125℃
TA=150℃
0
0.01
0.02
0.03
0.04
0.05
0.06
0 2 4 6 8 10 12 14 16 18 20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 15. Typical On-Resistance vs Drain Current
and Gate Voltage
VGS=-2.5V
VGS=-4.5V
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
012345678
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 16. Typical Transfer Characteristic
ID=-8.9A
ID=-6.9A
0
0.01
0.02
0.03
0.04
0.05
0 2 4 6 8 10 12 14 16 18 20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
ID, DRAIN CURRENT(A)
Figure 17. Typical On-Resistance vs Drain Current
and Temperature
VGS=-4.5V
TA=-55℃
TA=25℃
TA=85℃
TA=150℃
TA=125℃
0
0.5
1
1.5
2
2.5
-50 -25 025 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (℃)
Figure 18. On-Resistance Variation with Temperature
VGS=-4.5V, ID=-8.9A
VGS=-2.5V, ID=-6.9A
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0
0.01
0.02
0.03
0.04
0.05
0.06
-50 -25 025 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
TJ, JUNCTION TEMPERATURE (℃)
Figure 19. On-Resistance Variation with Temperature
VGS=-2.5V, ID=-6.9A
VGS=-4.5V, ID=-8.9A
0
0.3
0.6
0.9
1.2
1.5
-50 -25 025 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 20. Gate Threshold Variation vs Junction
Temperature
ID=-1mA
ID=-250µA
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
IS, SOURCE CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 21. Diode Forward Voltage vs Current
VGS=0V
TA=-55℃
TA=25℃
TA=85℃
TA=125℃
TA=150℃
10
100
1000
10000
0246810 12
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE(V)
Figure 22. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16 18 20
VGS (V)
Qg (nC)
Figure 23. Gate Charge
VDS=-6V, ID=-8.9A
0.1
1
10
100
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 24. SOA, Safe Operation Area
TJ(Max)=150
℃
TC=25℃
Single Pulse
DUT on Infinite Heatsink
VGS=-4.5V
R
DS(ON)
Limited
PW=1s
PW=10ms
PW=100µs
PW=1ms
PW=100ms
PW=10µs
DMC1018UPD
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DMC1018UPD
0.001
0.01
0.1
1
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 25. Transient Thermal Resistance
R
θJC
(t)=r(t) * R
θJC
RθJC=6.5℃/W
Duty Cycle, D=t1/t2
D=Single Pulse
D=0.005
D=0.01
D=0.02
D=0.3
D=0.5
D=0.7
D=0.9
D=0.1
D=0.05
DMC1018UPD
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8 (Type C)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8 (Type C)
Dimensions
Value
(in mm)
C
1.270
G
0.660
G1
0.820
X
0.610
X1
3.910
X2
1.650
X3
1.650
X4
4.420
Y
1.270
Y1
1.020
Y2
3.810
Y3
6.610
1
8
Y3
X4
Y1
Y2
X1
G1
X C
Y(4x)
G
X2
X3
PowerDI5060-8 (Type C)
Dim
Min
Max
Typ
A
0.90
1.10
1.00
A1
0
0.05
0.02
b
0.33
0.51
0.41
b1
0.300
0.366
0.333
b2
0.20
0.35
0.25
c
0.23
0.33
0.277
D
5.15 BSC
D1
4.85
4.95
4.90
D2
1.40
1.60
1.50
D3
-
-
3.98
E
6.15 BSC
E1
5.75
5.85
5.80
E2
3.56
3.76
3.66
e
1.27BSC
k
-
-
1.27
k1
0.56
-
-
L
0.51
0.71
0.61
La
0.51
0.71
0.61
L1
0.05
0.20
0.175
L4
-
-
0.125
M
3.50
3.71
3.605
x
-
-
1.400
y
-
-
1.900
θ
10°
12°
11°
θ1
6°
8°
7°
All Dimensions in mm
DETAIL A
0(4x)
Seating Plane
A1
c
e
01(4x)
D1
E1
D
E
1
y
x
Ø 1.000 Depth 0.07± 0.030
A
DETAIL A
Lk
M
L1
D2
La
E2
b(8x) e/2
1
b1(8x)
b2(2x)
D2
k1
D3
L4
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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