VHFD 16 VRRM = 800-1600 V IdAVM = 21 A Half Controlled Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes VRSM VDSM VRRM VDRM V V 900 1300 1700 800 1200 1600 Type 3 1 2 5 VHFD 16-08io1 VHFD 16-12io1 VHFD 16-16io1 6 8 10 Bridge and Freewheeling Diode Symbol Conditions IdAV IdAVM IFRMS, ITRMS TH = 85C, module module per leg IFSM, ITSM TVJ = 45C; VR = 0 V I2t (di/dt)cr (dv/dt)cr Maximum Ratings 16 21 15 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 150 170 A A TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 130 140 A A TVJ = 45C VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 110 120 A2s A2s TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 85 80 A2s A2s 150 A/s 500 A/s Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling 1000 V/s Dimensions in mm (1 mm = 0.0394") TVJ = 125C repetitive, IT = 50 A f = 50 Hz, tP = 200 s VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 0.5 IdAV diG/dt = 0.3 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) VRGM PGM Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1600 V Low forward voltage drop Leads suitable for PC board soldering UL registered E 72873 TVJ = TVJM IT = 0.5 IdAVM tp = 30 s tp = 500 s tp = 10 ms 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 C C C 3000 3600 V~ V~ 12.7 9.4 50 mm mm m/s2 2-2.5 18-22 35 Nm lb.in. g PGAVM TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s dS dA a Creep distance on surface Strike distance in air Max. allowable acceleration Md Mounting torque (M5) (10-32 UNF) Weight IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved Applications Supply for DC power equipment DC motor control 20100705a 1-3 http://store.iiic.cc/ VHFD 16 Symbol Conditions Characteristic Values IR, ID VR = VRRM; VD = VDRM VT, VF IT, IF = 45 A; TVJ = 25C VT0 rT For power-loss calculations only (TVJ = 125C) TVJ = TVJM TVJ = 25C 5 0.3 mA mA 2.55 V 1.0 40 V m VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C TVJ = 125C 1.0 1.2 65 80 50 V V mA mA mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 0.2 5 V mA IL IG = 0.3 A; tG = 30 s; diG/dt = 0.3 A/s; TVJ = 25C TVJ = -40C TVJ = 125C 150 200 100 mA mA mA IH TVJ = 25C; VD = 6 V; RGK = 100 mA tgd TVJ = 25C; VD = 0.5VDRM IG = 0.3 A; diG/dt = 0.3 A/s 2 s tq Qr TVJ = 125C, IT = 15 A, tP = 300 s, VR = 100 V di/dt = -10 A/s, dv/dt = 20 V/s, VD = 2/3 VDRM typ. 150 75 s C RthJC per thyristor (diode); DC current per module per thyristor (diode); DC current per module 2.4 0.6 3.0 0.75 K/W K/W K/W K/W VGT VD = 6 V; IGT RthJH 10 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C V VG 1 1 2 3 6 4 5 4: PGAV = 0.5 W 0.1 5: PGM = 1 W 6: PGM = 10 W IGD, TVJ = 125C 1 10 100 1000 IG mA Fig. 1 Gate trigger range 1000 TVJ = 25C s tgd 100 typ. Limit 10 Field Diodes Symbol Conditions Maximum Ratings IFAV IFAVM IFRMS TH = 85C, per Diode per diode per diode IFSM TVJ = 45C; VR = 0 V 4 4 6 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 100 110 A A TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 85 94 A A TVJ = 45C VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 50 50 A2s A2s TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 36 37 A2s A2s IR VR = VRRM TVJ = TVJM TVJ = 25C 1 0.15 mA mA VF IF = 21 A; TVJ = 25C 1.83 V VT0 rT For power-loss calculations only (TVJ = 125C) 0.9 50 V m RthJC RthJH per diode; DC current per diode; DC current 4.4 5.2 K/W K/W I2t 1 10 100 mA 1000 IG Fig. 2 Gate controlled delay time tgd Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. for resistive load IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100705a 2-3 http://store.iiic.cc/ VHFD 16 120 70 A 60 103 50Hz, 80% VRRM 2 A 100 typ. As IFSM IF 50 VR = 0 V TVJ = 45C 2 max. It 80 TVJ =125C 40 TVJ = 25C TVJ = 45C 102 60 30 TVJ = 125C 40 TVJ = 125C 20 20 10 0 0 1 2 3 V 101 0 0.001 4 0.01 0.1 VF 1 s 1 2 3 t Fig. 3 Forward current vs. voltage drop per diode 4 5 6 78 ms910 t Fig. 5 I2t versus time per diode Fig. 4 Surge overload current 25 90 W 80 A Id(AV)M 20 RthHA : 70 Ptot 60 0.5 1.0 1.5 2.0 3.0 4.0 6.0 50 40 K/W K/W K/W K/W K/W K/W K/W 15 10 30 20 5 10 0 0 0 5 10 15 20 A 25 00 20 40 60 Id(AV)M 80 100 120 C 140 0 20 40 60 Tamb Fig. 6 Power dissipation vs. direct output current and ambient temperature 80 100 120 C TH Fig. 7 Max. forward current vs. heatsink temperature 3.5 K/W 3.0 ZthJH 2.5 2.0 Constants for ZthJH calculation: 1.5 i 1.0 1 2 3 4 0.5 0.0 0.001 0.01 0.1 s 1 Fig. 8 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved Rthi (K/W) ti (s) 0.01 0.4 1.69 0.9 0.008 0.05 0.06 0.25 10 t 20100705a 3-3 http://store.iiic.cc/