© 2010 IXYS All rights reserved 1 - 3
IXYS reserves the right to change limits, test conditions and dimensions.
VHFD 16
20100705a
Symbol Conditions Maximum Ratings
IdAV TH = 85°C, module 16 A
IdAVM module 21 A
IFRMS, ITRMS per leg 15 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 150 A
VR = 0 V t = 8.3 ms (60 Hz), sine 170 A
TVJ = TVJM t = 10 ms (50 Hz), sine 130 A
VR = 0 V t = 8.3 ms (60 Hz), sine 140 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 110 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 120 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 85 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 80 A2s
(di/dt)cr TVJ = 125°C repetitive, IT = 50 A 150 A/μs
f = 50 Hz, tP = 200 μs
VD = 2/3 VDRM
IG = 0.3 A, non repetitive, IT = 0.5 IdAV 500 A/μs
diG/dt = 0.3 A/μs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/μs
RGK = ∞; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp = 30 μs≤10 W
IT = 0.5 IdAVM tp = 500 μs≤5W
tp = 10 ms ≤1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
dSCreep distance on surface 12.7 mm
dAStrike distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
MdMounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight 35 g
VRSM VRRM Type
VDSM VDRM
VV
900 800 VHFD 16-08io1
1300 1200 VHFD 16-12io1
1700 1600 VHFD 16-16io1
Bridge and Freewheeling Diode
Features
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1600 V
Low forward voltage drop
Leads suitable for PC board soldering
UL registered E 72873
Applications
Supply for DC power equipment
DC motor control
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
VRRM = 800-1600 V
IdAVM = 21 A
Half Controlled
Single Phase Rectifier Bridge
Including Freewheeling Diode and Field Diodes
135
2
6810
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© 2010 IXYS All rights reserved 2 - 3
IXYS reserves the right to change limits, test conditions and dimensions.
VHFD 16
20100705a
Symbol Conditions Characteristic Values
IR, IDVR = VRRM; VD = VDRM TVJ = TVJM ≤5mA
TVJ = 25°C≤0.3 mA
VT, VFIT, IF = 45 A; TVJ = 25°C≤2.55 V
VT0 For power-loss calculations only (TVJ = 125°C) 1.0 V
rT40 mΩ
VGT VD = 6 V; TVJ = 25°C≤1.0 V
TVJ = -40°C≤1.2 V
IGT VD = 6 V; TVJ = 25°C≤65 mA
TVJ = -40°C≤80 mA
TVJ = 125°C≤50 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM ≤0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM ≤5mA
ILIG = 0.3 A; tG = 30 μs; TVJ = 25°C≤150 mA
diG/dt = 0.3 A/μs; TVJ = -40°C≤200 mA
TVJ = 125°C≤100 mA
IHTVJ = 25°C; VD = 6 V; RGK = ∞≤100 mA
tgd TVJ = 25°C; VD = 0.5VDRM ≤2μs
IG = 0.3 A; diG/dt = 0.3 A/μs
tqTVJ = 125°C, IT = 15 A, tP = 300 μs, VR = 100 V typ. 150 μs
Qrdi/dt = -10 A/μs, dv/dt = 20 V/μs, VD = 2/3 VDRM 75 μC
RthJC per thyristor (diode); DC current 2.4 K/W
per module 0.6 K/W
RthJH per thyristor (diode); DC current 3.0 K/W
per module 0.75 K/W
Symbol Conditions Maximum Ratings
IFAV TH = 85°C, per Diode 4 A
IFAVM per diode 4 A
IFRMS per diode 6 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A
VR = 0 V t = 8.3 ms (60 Hz), sine 110 A
TVJ = TVJM t = 10 ms (50 Hz), sine 85 A
VR = 0 V t = 8.3 ms (60 Hz), sine 94 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 50 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 50 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 36 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 37 A2s
IRVR = VRRM TVJ = TVJM 1mA
TVJ = 25°C 0.15 mA
VFIF = 21 A; TVJ = 25°C 1.83 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.9 V
rT50 mΩ
RthJC per diode; DC current 4.4 K/W
RthJH per diode; DC current 5.2 K/W
Field Diodes
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
for resistive load
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time tgd
1 10 100 1000
0.1
1
10
IG
VG
mA
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
4: PGAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
IGD, TVJ = 125°C
4
2
1
5
6
10 100 1000
1
10
100
1000
μs
tgd
TVJ = 25°C
typ. Limit
mA
IG
3
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© 2010 IXYS All rights reserved 3 - 3
IXYS reserves the right to change limits, test conditions and dimensions.
VHFD 16
20100705a
23456789110
101
102
103
0.001 0.01 0.1 1
0
20
40
60
80
100
120
01234
0
10
20
30
40
50
60
70
0 5 10 15 20 25
0
10
20
30
40
50
60
70
80
90
0 20406080100120140
0
0.001 0.01 0.1 1 10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I2t
IFSM
IF
A
VFt
s
t
ms
Ptot
W
Id(AV)M
A
Tamb
t
s
ZthJH
K/W
A2s
0 20406080100120
0
5
10
15
20
25
Id(AV)M
TH
A
V
A
°C °C
TVJ =125°C
TVJ = 25°C
TVJ = 45°C
typ.
max.
50Hz, 80% VRRM
TVJ = 125°C
TVJ = 45°C
TVJ = 125°C
VR = 0 V
Fig. 3 Forward current vs. voltage
drop per diode
Fig. 4 Surge overload current Fig. 5 I2t versus time per diode
Fig. 6 Power dissipation vs. direct output current and ambient temperature Fig. 7 Max. forward current vs.
heatsink temperature
Fig. 8 Transient thermal impedance junction to heatsink
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.01 0.008
2 0.4 0.05
3 1.69 0.06
4 0.9 0.25
RthHA :
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
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