2SC4596
NPN Silicon
Power Transistors
Features
• With TO-220Fa package
• Amplifier applications
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 100 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current 5.0 A
PC Collector power dissipation 25 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=100mAdc, IB=0) 60 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=100Vdc,IE=0) --- 10 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0) --- 1.0 mAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(IC=1.0Adc, VCE=2.0Vdc) 60 320 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=4.0Adc, IB=0.2Adc) --- 0.5 Vdc
VBE(SAT) Base-Emitter Saturation Voltage
(IC=4.0Adc,IB=0.2Adc) --- 1.5 Vdc
omponents
21201 Itasca Street Chatsworth
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MCC
www.mccsemi.com
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .02 .03 .60 .80
B .29 .30 7.30 7.70
C --- .67 --- 17.00
D .53 --- 13.50 ---
E .16 4.0
G --- .40 --- 10.20
H --- .22 --- 5.70
I .16 .17 4.00 4.40
J .12 .13 3.00 3.20
K --- .06 --- 1.50
L .03 .04 .70 .90
M 2.84 .11 2.24 2.84
N .18 .22 4.58 5.58
O --- .17 --- 4.40
P --- .11 --- 2.90
Q --- .02 --- .50
R --- .06 --- 1.50
∅
TO-220Fa
