© Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 6
1Publication Order Number:
MRS1504T3/D
MRS1504T3G,
NRVS1504T3G
Surface Mount Standard
Recovery Power Rectifier
SMB Power Surface Mount Package
Features mesa epitaxial construction with glass passivation. Ideally
suited for high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
Compact Package with JBend Leads Ideal for Automated Handling
Stable, High Temperature, Glass Passivated Junction
AECQ101 Qualified and PPAP Capable
NRVS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb-Free*
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 95 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Maximum Temperature of 260°C / 10 Seconds for Soldering
Polarity: Notch and/or Band in Plastic Body Indicates Cathode Lead
ESD Ratings:
Machine Model = C
Human Body Model = 3A
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
STANDARD RECOVERY
RECTIFIER
1.5 AMPERES, 400 VOLTS
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
RGG = Device Code
G= PbFree Package
(Note: Microdot may be in either location)
AYWW
RGG G
G
MRS1504T3G SMB
(PbFree)
2,500 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NRVS1504T3G SMB
(PbFree)
2,500 /
Tape & Reel
MRS1504T3G, NRVS1504T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
400 V
Average Rectified Forward Current
(At Rated VR, TI = 118°C)
IO1.5
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TI = 118°C)
IFRM 3.0
A
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM 50
A
Storage/Operating Case Temperature Range Tstg, TC55 to 150 °C
Operating Temperature Range TJ55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance, JunctiontoLead (Note 1) Rtjl 18 °C/W
Thermal Resistance, JunctiontoAmbient (on 1 sq. Cu. PCB pattern) Rtja 79 °C/W
1. Minimum pad size.
ELECTRICAL CHARACTERISTICS
Rating Symbol TJ = 25_C TJ = 100_CUnit
Maximum Instantaneous Forward Voltage (Note 2), see Figure 2
(IF = 1.5 A)
(IF = 2.25 A)
VF1.04
1.10
0.96
1.02
V
Maximum Instantaneous Reverse Current, see Figure 4
(VR = 400 V)
(VR = 200 V)
IR1.0
0.5
340
180
mA
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%
MRS1504T3G, NRVS1504T3G
http://onsemi.com
3
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
0.6
VF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
1.0
VF
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.6
1.0
0.1
4000
VR, REVERSE VOLTAGE (VOLTS)
100E-6
10E-6
1.0E-6
100E-9
10E-9
1.0E-9
VR, REVERSE VOLTAGE (VOLTS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)I
0.1
1.20.8 1.0 1.6 0.8 1.0 1.2 1.6
10
100
100 200 300
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
, REVERSE CURRENT (AMPS)
R
4000
10E-9
1.0E-3
100E-6
10E-6
1.0E-6
100E-9
I
100 200 300
, MAXIMUM REVERSE CURRENT (AMPS)
R
TJ = 150°C
TJ = 100°C
TJ = -40°C
TJ = 25°CTJ = 150°C
TJ = 100°C
TJ = 25°C
TJ = 150°C
TJ = 100°C
TJ = 25°C
100
1.4 1.4
10E-3
TJ = 150°C
TJ = 100°C
TJ = 25°C
SQUARE WAVE
Figure 5. Current Derating Figure 6. Forward Power Dissipation
20 600
TL, LEAD TEMPERATURE (°C)
2.5
2.0
1.5
1.0
0.5
0
IO, AVERAGE FORWARD CURRENT (AMPS)
0.50
2.5
2.0
1.5
0.5
0
2.040
, AVERAGE FORWARD CURRENT (AMPS)IO
80 120100 1.0 1.5 2.5
1.0
PFO, AVERAGE POWER DISSIPATION (WATTS)
160
dc
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io = p
SQUARE WAVE
dc
140
FREQ = 20 kHz
MRS1504T3G, NRVS1504T3G
http://onsemi.com
4
Figure 7. Capacitance
600
VR, REVERSE VOLTAGE (VOLTS)
100
10
1.0
C, CAPACITANCE (pF)
3010 20 40 50 70 80
TJ = 25°C
Figure 8. Thermal Response, JunctiontoLead
Figure 9. Thermal Response, JunctiontoAmbient
1000.10.00001
T, TIME (s)
1.0
0.1
0.01
R
0.0001 0.001 0.01 1.0 10
0.001
, TRANSIENT THERMAL RESISTANCE (NORMALIZE
D
(T)
T, TIME (s)
1.0
0.1
0.01
R
0.001
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
(T)
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
1000.10.00001 1,0000.0001 0.001 0.01 1.0 10
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
MRS1504T3G, NRVS1504T3G
http://onsemi.com
5
PACKAGE DIMENSIONS
SMB
CASE 403A03
ISSUE J
2.261
0.089
2.743
0.108
2.159
0.085 ǒmm
inchesǓ
SCALE 8:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
E
bD
c
L1
L
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.95 2.30 2.47 0.077
INCHES
A1 0.05 0.10 0.20 0.002
b1.96 2.03 2.20 0.077
c0.15 0.23 0.31 0.006
D3.30 3.56 3.95 0.130
E4.06 4.32 4.60 0.160
L0.76 1.02 1.60 0.030
0.091 0.097
0.004 0.008
0.080 0.087
0.009 0.012
0.140 0.156
0.170 0.181
0.040 0.063
NOM MAX
5.21 5.44 5.60 0.205 0.214 0.220
HE
0.51 REF 0.020 REF
D
L1
HE
POLARITY INDICATOR
OPTIONAL AS NEEDED
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MRS1504T3/D
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