PD - 97208 IRGP4065PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25C c TJ max 300 1.75 205 150 C V V A C C E C G G E TO-247AC n-channel G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25C Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Max. Units 30 V 70 A IC @ TC = 100C Continuous Collector, VGE @ 15V 40 IRP @ TC = 25C Repetitive Peak Current c 205 PD @TC = 25C Power Dissipation 178 PD @TC = 100C Power Dissipation 71 Linear Derating Factor 1.4 W/C TJ Operating Junction and -40 to + 150 C TSTG Storage Temperature Range 300 Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw W 10lbxin (1.1Nxm) N Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) Typ. Max. Units --- 0.24 --- 0.80 --- 40 C/W 1 05/10/06 IRGP4065PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter BVCES VCES/TJ Min. Typ. Max. Units gfe Qg Qgc tst Collector-to-Emitter Breakdown Voltage 300 Breakdown Voltage Temp. Coefficient --- --- --- Static Collector-to-Emitter Voltage --- --- --- Gate Threshold Voltage 2.6 Gate Threshold Voltage Coefficient --- Collector-to-Emitter Leakage Current --- --- Gate-to-Emitter Forward Leakage --- Gate-to-Emitter Reverse Leakage --- Forward Transconductance --- Total Gate Charge --- Gate-to-Collector Charge --- Shoot Through Blocking Time 100 --- 0.23 1.20 1.35 1.75 2.35 2.00 --- -11 2.0 50 --- --- 26 62 20 --- EPULSE Energy per Pulse --- 875 --- 975 --- --- --- --- 2200 110 55 5.0 VCE(on) VGE(th) VGE(th)/TJ ICES IGES Ciss Coss Crss LC Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance = 1.0MHz, --- --- nH LE Internal Emitter Inductance --- 13 Conditions --- V VGE = 0V, ICE = 1 mA --- V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 25A e 1.40 VGE = 15V, ICE = 40A e --- 2.10 V VGE = 15V, ICE = 70A e VGE = 15V, ICE = 120A e --- VGE = 15V, ICE = 70A, TJ = 150C --- 5.0 V VCE = VGE, ICE = 500A --- mV/C 25 A VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150C --- 100 nA VGE = 30V VGE = -30V -100 --- S VCE = 25V, ICE = 25A --- nC VCE = 200V, IC = 25A, VGE = 15Ve --- --- ns VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V --- J VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V --- VCC = 240V, RG= 5.1, TJ = 100C V --- GE = 0V --- pF VCE = 30V --- See Fig.13 Between lead, 6mm (0.25in.) from package and center of die contact Notes: Half sine wave with duty cycle = 0.25, ton=1sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRGP4065PbF 200 200 TOP 160 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 120 BOTTOM TOP ICE (A) ICE (A) 160 80 120 BOTTOM 80 40 40 0 0 0 2 4 6 8 10 12 14 16 0 2 4 6 VCE (V) 8 10 12 14 16 VCE (V) Fig 1. Typical Output Characteristics @ 25C Fig 2. Typical Output Characteristics @ 75C 360 280 TOP 200 TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 240 BOTTOM V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 320 280 BOTTOM 240 160 ICE (A) ICE (A) V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 120 200 160 120 80 80 40 40 0 0 0 2 4 6 8 10 12 14 0 16 2 4 Fig 3. Typical Output Characteristics @ 125C 8 10 12 14 16 Fig 4. Typical Output Characteristics @ 150C 600 20 IC = 25A 500 15 400 T J = 25C T J = 125C VCE (V) ICE, Collector-to-Emitter Current (A) 6 VCE (V) VCE (V) 300 T J = 25C T J = 150C 10 200 5 100 0 0 0 5 10 15 VGE, Gate-to-Emitter Voltage (V) Fig 5. Typical Transfer Characteristics www.irf.com 20 0 5 10 15 20 VGE (V) Fig 6. VCE(ON) vs. Gate Voltage 3 IRGP4065PbF 80 220 Repetitive Peak Current (A) IC, Collector Current (A) 60 50 40 30 20 180 160 140 120 100 80 60 40 10 20 0 0 0 25 50 75 100 125 150 25 T C, Case Temperature (C) 75 100 125 150 Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1000 1000 V CC = 240V L = 220nH C = 0.4F 900 L = 220nH C = variable 100C Energy per Pulse (J) 900 800 25C 700 600 500 100C 800 700 25C 600 500 400 300 200 400 160 170 180 190 200 210 220 150 160 170 180 190 200 210 220 230 240 230 VCE, Collector-to-Emitter Voltage (V) IC, Peak Collector Current (A) Fig 9. Typical EPULSE vs. Collector Current 1400 Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 1000 OPERATION IN THIS AREA LIMITED BY V CE(on) V CC = 240V L = 220nH t = 1s half sine 1200 C= 0.4F 1000 10sec 100 800 IC (A) Energy per Pulse (J) 50 Case Temperature (C) Fig 7. Maximum Collector Current vs. Case Temperature Energy per Pulse (J) ton= 1s Duty cycle = 0.25 Half Sine Wave 200 70 C= 0.3F 600 100sec 10 1msec C= 0.2F 400 200 1 25 50 75 100 125 TJ, Temperature (C) Fig 11. EPULSE vs. Temperature 4 150 1 10 100 1000 VCE (V) Fig 12. Forrward Bias Safe Operating Area www.irf.com IRGP4065PbF 100000 VGE, Gate-to-Emitter Voltage (V) IC = 25A Coes = Cce + Cgc 10000 Capacitance (pF) 25 VGS = 0V, f = 1 MHZ C ies = C ge + C gd , C ce SHORTED Cres = C gc Cies 1000 100 Coes Cres 20 VCE = 240V VCE = 200V VCE = 150V 15 10 5 0 10 0 50 100 150 200 250 0 300 10 VCE, Collector-toEmitter-Voltage(V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage 20 30 40 50 60 70 80 Q G, Total Gate Charge (nC) Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 R1 R1 0.05 0.01 0.001 1E-006 J 0.02 0.01 J 1 1 R2 R2 2 3 2 Ci= i/Ri Ci i/Ri 0.0001 C 3 Ri (C/W) i (sec) 0.146 0.000131 0.382 0.001707 0.271 0.014532 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 R3 R3 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRGP4065PbF A RG C DRIVER PULSE A L VCC B RG PULSE B Ipulse DUT tST Fig 16b. tst Test Waveforms Fig 16a. tst and EPULSE Test Circuit VCE Energy L IC Current DUT 0 VCC 1K Fig 16c. EPULSE Test Waveforms 6 Fig. 17 - Gate Charge Circuit (turn-off) www.irf.com IRGP4065PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$03/( 7+,6,6$1,5)3( :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 ,5)3( + '$7(&2'( <($5 :((. /,1(+ TO-247AC package is not recommended for Surface Mount Application. The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/06 www.irf.com 7 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/