NSxT, NSFxT, NSBxT
Vishay Semiconductors
for merly General Semiconductor
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
NS8 NS8 NS8 NS8 NS8 NS8 NS8
Parameter Symbols AT BT DT GT JT KT MT Units
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current
at TC=100°C IF(AV) 8.0 A
Peak forward surge current
8.3ms single half sine-wave superimposed on IFSM 125 A
rated load (JEDEC Method)
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
RMS Isolation voltage (NSF type only) 4500(1)
from terminals to heatsink VISOL 3500(2) V
with t = 1.0 second, RH ≤30% 1500(3)
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
NS8 NS8 NS8 NS8 NS8 NS8 NS8
Parameter Symbols AT BT DT GT JT KT MT Units
Maximum instantaneous forward voltage at 8.0A VF1.1 V
Maximum DC reverse current
at rated DC blocking voltage TC=25°C IR10 µA
TC=100°C 100
Typical junction capacitance at 4.0V, 1MHz CJ55 pF
Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbols NSxT NSFxt NSBxt Units
Typical ther mal resistance(4) RΘJC 3.0 5.0 3.0 °C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤4.9mm (0.19”)
(4) Thermal resistance from junction to case mounted on heat sink
www.vishay.com Document Number 88690
208-Jul-02