Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ps (on) = 0.300 and 0.400 Features: a Single pulse avalanche energy rated a SOA is power-dissipation limited u Nanosecond switching speeds w Linear transfer characteristics g High input impedance The IRFF9130, IRFF9131, IRFF9132 and IRFF9133 are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhance- ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators, switch- ing converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRFF-types are supplied in the JEDEC TO-205AF (LOW-PROFILE TO-39) metal package. Absolute Maximum Ratings File Number 2216 TERMINAL DIAGRAM D G 92CS-43296 P-CHANNEI. ENHANCEMENT MODE TERMINAL DESIGNATION GATE SOURCE DRAIN (CASE) JEDEC TO-205AF Parameter IRFF9130 IRFF9131 IRFF9132 IRFF9133 Units Vos Drain Source Voltage ( -100 -60 ~ 100 -60 v VpoGR Drain Gate Voltage (Rgg = 20 k2) O -100 -60 -100 -60 v Ip @ Te = 25C Continuous Drain Current -6.5 -6.5 -5.5 -5.5 A jom Pulsed Drain Current @ -26 -26 22 -22 A V6s Gate Source Voltage +20 Vv Pop @Tc = 25C Max. Power Dissipation 25 (See Fig. 14) Ww Linear Derating Factor 0.2 (See Fig. 14! w/c Ens Single Pulse Avalanche Energy @ 500 mJ T. Nnction Tag Stovade Semperature Range ~55 to 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-416Rugged Power MOSFETs IRFF9130, IRFF9131, IRFF9132, IRFF9133 Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. | Max. Units Test Conditions BVoss_ Drain Source Breakdown Voltage IRFF9130 _ _ = inFFg132| ~ 100 v Vas = OV IRFF9131 _. inergi33} 8 | ~ | 7 Ip = ~250nA VGsith) Gate Threshold Voltage ALL -2.0 = -4.0 v Vos = Vos. Ip = -2504A4 igss Gate Source Leakage Forward ALL - -100 nA Vgs = -20V loss Gate -- Source Leakage Reverse ALL = _ 100 nA Vag = 20V Joss Zero Gate Voltage Drain Current = = -250 A Vos = Max. Rating, VGs = OV ALL _ |-1000 uA Vps = Max. Rating x 0.8, Vgg = OV, Tc = 125C IDion) On-State Drain Current @ IRFFQ130] 6 _ _ A 1 - IAF FOIS Vos > 'p(on) * RaSion) max. VGS = ~10V IRFFQI321 og | _ A IRFF9133 . RpS(on) Static Drain Source On-State IRFF9130 _ Resistance @ IRFF9131 0.25 | 0.30 a IRFFO?32 Ve6s = -10V, Ip = -3.0A IRFF9133 - 0.30 | 0.40 2 Ofs Forward Transconductance @) ALL 2.5 3.5 ~- $ (B} Vos > Ipion} * RaS(on) max.- 'D = -3.0A - Cigs (nput Capacitance ALL - 500 _ pF Vag = OV. Vpg = -25V, f = 1.0 MHz Coss Output Capacitance ALL 300 _ pF See Fig. 10 Criss Reverse Transfer Capacitance ALL 100 _ pF td(on) Turn-On Delay Time ALL _ 30 60 ns Vop = 0.5 BVpgg. !p = -3.0A, Zg = 502 t Rise Time ALL - 70 140 ns See Fig. 17 tajotty Turn-Off Delay Time ALL = 70 140 ns (MOSFET switching times are essentially tf Fall Time ALL _ 70 140 ns independent of operating temperature.) Og Total Gate Charge ALL _ 25 45 ac Ves = -15, Ip =-15A, Vog = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is essentially independent of operating temperature.) Qgs Gate-Source Charge ALL _ 13 23 nc Ogg Gate-Drain {*Miller) Charge ALL = 12 22 nc Lp Internal Drain Inductance ALL _ 5.0 - nH Measured from the Modified MOSFET drain lead, 5mm symbol showing the (0.2 in.} from header internal device to center of die. inductances. 9 Lp. ls Internal Source Inductance ALL - 15 _ nH Measured from the + source lead, 5mm G F (0.2 in.) from header ts to source bonding pad. 3 Thermal Resistance Rsc Junction-to-Case ALL = = 5.0 C/W R6a Junction-to-Ambient ALL - = 178 C/W Typical socket mount Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFF9130 _ _ -6.5 A Modified MOSFET symbol o (Body Diode) {RFF9131 . showing the integral IRFF9132 reverse P-N junction rectifier. IRFF9133} 7 |S] A = ism Pulse Source Current IRFF9130 _ 26 A G {Body Diode) @) IRFF9131 ~ {RFF9132 IRFFQ133| ~ ~ | 722 [A s Vsp Diode Forward Voltage @) IRFF9130 . . _ _ iRFF9131|~ - 15 v Te = 25C, Ig = -6.5A, Vgg = OV iIRFF9132 = = = inrrai33|~ - | -1s v Te = 28C, Ig = -5.5A. Vgg = OV ter Reverse Recovery Time ALL - 300 7 ns Ty = 150C. tp = -6.5A, dig/dt = 100A/us Orr Reverse Recovered Charge ALL = 1.8 = uC Ty = 150C, Ip = -6.5A, dlpe/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. @ Ty = 25C to 180C. @ Pulse Test: Pulse width < 300ys, Duty Cycle < 2%, (@ Repetitive Rating: Pulse width limited by max. junction temperature. @ Vop = 25V, starting Ty = 25C, & = 17.75 mH, Re = 250, Peak I. = 6.5A. (See Fig. 15 and 16) See Transient Thermal Impedance Curve (Fig. 5). 6-417Rugged Power MOSFETs 6-418 a w & z < t z wu x 3 3G z = a $ Vog, DRAIN-TO-SOURCE VOLTAGE (VOLTS: Fig. 1 - Typical Output Characteristics ip, DRAIN CURRENT (AMPERES) -1 Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS) s2C8-49299 =2 =3 =4 Fig. 3 - Typical Saturation Characteristics IMPEDANCE (PER UNIT) e Sz ai 34 zz =< ef - Sw 22 65 ow ome ne w 10-8 1074 IRFF9130, IRFF9131, IRFF9132, IRFF9133 9208-43207 PULSE THERMAL IMPEDANCE) 10-3 1072 a w tf w a z < - z w > oe z < = a a a wi wi a = < 6 z wl 3 o z < ec a 8 80 pS PULSE Vos > p(on) * Rosion) max. y= 125 Ty = 25 Ty =-58 -8 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) e2C8-49208 -10 Fig. 2 - Typical Transfer Characteristics 1S LIMITED BY Rog (ON) 10 t 100 uS To = 25 Ty = 150C MAX, 4) Rauc = 5.0 C/W SINGLE PULSE 2 468 2 4 68 2 710 100 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) 92CS-4329) 1.0 -1000 Fig. 4 - Maximum Sate Operating Area - DUTY FACTOR. D = ty/tg . PER UNIT BASE = Rac = 5.0 DEG. C/W. Tam - To = Pome 2 5 so-1 1.0 10 ty, SQUARE WAVE PULSE OURATION (SECONDS) 920M. 43292 Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse DurationRugged Power MOSFETs IRFF9130, IRFF9131, IRFF9132, IRFF9133 I = Vos > !pion) * Fios(on) max. 80 g 3 @ w Z e 2 fo] 3 lpr. REVERSE a = -6.4 ~0.6 -6.8 -1t.0 -1.2 td ~#.6 ~1.8 Ip, DRAIN CURRENT (AMPERES) Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 9258-43202 9208-43303 Fig. 6 - Typical Transconductance Vs, Drain Current Fig. 7 - Typical Source-Drain Diode Forward Voltage 22 Veg =-10V Ip=3.5A BREAKDOWN a @ 1 INORMALIZED) s a N a < = = z 8 = 3 > ORAIN- w 2s 2 & a w ec z o Ww 9 4 2 3 a 3 E < < 4 3 2g @ Rpsjon): 40 120 160 -40 40 120 160 . Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) MICS-43306 9205-43306 Fig. 8 - Breakdown Voltage Vs. Temperature Fig. 9 - Normatized On-Resistance Vs. Temperature 1000 Veg =0 1 SA = a p=- t= 1 MHz 5 FOR TEST CIRCUIT B00 Cie = Cys + Coa, Cas SHORTED 9 SEE FIGURE 18 _ eo \ Cras = Coa a ra Cys Coa & Coss = +s 9 < s 00 X oss = Cas Tou F Cga 5 N = = Cian Cas + Cog a Vps = 80 V, IRFF9130, 9132 e itt g & 400 Coss 3 1 2 CRS ; \ P| s 200 Cras 9 & o > 0 | 0 10 20 -30 40 = Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC} 9208-43307 9208-43308 Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 - Typical Gate Charge Vs. Gate-to-Source Voltage 6-419Rugged Power MOSFETs IRFF9130, IRFF9131, IRFF9132, IRFF9133 1.0 Ves = -tov z a o 0.8}- w oa ry IRFF9130, 9131 ae? = pz < oz 4S 06 E > 2 ou | w ~ v 4 2% 5 t ost J 3 ei z 3 | Vas = -20V_ ee 6 & o2 - 2 Rpscon) MEASURED WITH CURRENT PULSE OF 2.0 pS [- DURATION. INITIAL Ty = 25 C (HEATING + o| EFFECT OF 2.0uS PULSE IS MINIMAL) L n i . 1 " 4 . t 25 50 125 150 10 ~20 ~30 ~40 ~s0 Tc, CASE TEMPERATURE (C) Ip, ORAIN CURRENT (AMPERES) 9208-43309 92CS-43299 Fig. 12 - Typical On-Resistance Vs. Drain Current Fig. 13 - Maximum Drain Current Vs. Case Temperature {ov V@g =-10V VARY tp TO OBTAIN = REQUIRED PEAK I 3 9208-43278 m Fig. 15 - Unclamped Inductive Test Circuit a a 2 ba 0--------~- procter nt enn w \ f = N / 2 \ i = N. i k & S / \ IL So Yoo 1 To, CASE TEMPERATURE (C) 92CS-43300 t P BVpss Fig. 14 - Power Vs. Temperature Derating Curve 9208-43312 Fig. 16 - Unclamped inductive Waveforms -v -V CURRENT os BP REGULATOR O ISOLATED ADJUST R, SUPPLY TO OBTAIN i SPECIFIED Ip wy = SAME TYPE RL BATTERY 4. vi PUL GENERATOR roasts D.U.T. i I | TO SCOPE | 0.012. [- HIGH FREQUENCY O+Vv t SHUNT Ig Ip ps L--4te-.- + CURRENT CURRENT 1 SAMPLING SAMPLING = RESISTOR RESISTOR 92C$-43313 92CS-43314 Fig. 17 - Switching Time Test Circuit Fig. 18 - Gate Charge Test Circuit 6-420