RD2004LN
No. A1270-1/3
Features
High breakdown voltage (VRRM=400V).
High reliability.
One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.
Fast reverse recovery time.
Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 400 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 400 V
Average Output Current IO20 A
Surge Forward Current IFSM Sine wave, 10ms single pulse 180 A
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Voltage VRIR=1mA 400 V
Forward Voltage VFIF=20A 1.3 1.5 V
Reverse Current IRVR=400V 100 μA
Reverse Recovery Time trr1I
F=10A, di / dt=100A/μs44 50 ns
trr2I
F=0.5A, IR=1A 20 ns
Thermal Resistance Rth(j-c) Junction-Case : Smoothed DC 4.0 °C / W
SANYO Semiconductors
DATA SHEET
Ordering number : ENA1270A
N1809 TK IM TC-00002181 / 73008SA TI IM TC-00001521
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
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consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
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www.semiconductor-sanyo.com/network
RD2004LN Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
RD2004LN
No. A1270-2/3
Package Dimensions
unit : mm (typ)
7509-004
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
123
10.0
3.2
1 : No Contact
2 : Cathode
3 : Anode
SANYO : TO-220FI(LS)
IF -- VF
Forward Voltage, VF -- V
Forward Current, IF -- A
0 0.4 1.20.80.2 1.00.6 1.4
5
7
2
3
2
0.001
0.01
5
7
3
2
0.1
5
7
3
2
3
2
1.0
5
7
3
10
IT13031
Ta=120°C
70
°
C
25
°
C
--40°C
IFSM -- t
Surge Forward Current, IFSM(Peak) -- A
Time, t -- s
Cj -- VR
Junction Capacitance, Cj -- pF
Reverse Voltage, VR -- V
0.1 1.0
2357 2 10
357 2
2
3
5
2
7
100
5
3
10
f=100kHz
IT13032
100
110
120
130
140
150
170
160
180
190
0.01
23 7
0.1
523 2371.0
5
IT13033
100
357
IS
20ms
t
Current waveform 50Hz sine wave Rth(j-c) -- t
Transient Thermal Resistance Rth(j-c) -- °C / W
Time, t -- sIT13318
0.001 0.01
2
2
3
537 2 0.1
537 2 1.0
537 2 10
537
7
3
5
2
5
7
1.0
RD2004LN
No. A1270-3/3PS
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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