NPN SILICON TRANSISTORS, EPITAXIAL PLANAR *2N 1613 TRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX * 2 N 171 1 K Preferred device Dispositif recommand - LF amplification Amplification BF - Switching Commutation VcerR 50V 40 - 120 2N 1613 haie (150 ma) {100.300 2N 1711 f { 60 MHz min. 2N 1613 T 70 MHz min. 2N 1711 Maximum power dissipation Case TO-39 See outline drawing CB-7 on last pages Dissipation de puissance maximale Boitier Voir dessin cot CB-7 dernires pages Prot (WwW) 3 IN KF 2 t NX B | {21 Bottom view 1 | Vue de dessous pomp) i] Tamb(C) (1) . . 9 am a Weight : 1,19. Collector is connected to case 0 50 100 160 case! C} (2) Masse Le collecteur est reli au boitier ABSOLUTE RATINGS (LIMITING VALUES) + b = +25 C (Unless otherwise stated) VALEURS LIMITES ABSOLUES DUTILISATION am (Sauf indications contraires} Collector-base voltage Vv Tension collecteur-base cBO 7% Vv Collector-emitter voltage 7 Tension collecteur-metteur Ree = 102 CER 50 v Emitter-base voltage Vv Tension metteur-base EBO 7 Vv T, = 25C (1) 0,8 Power dissipation amb Prot Ww Dissipation de puissance _ Toase = 25C (2) 3 Junction temperature T Temprature de jonction max } 200 C Storage temperature min T 65 C Temprature de stockage max stg +200 c 76-02 1/6 BE ovsonce OMSION SEMCONDLCTELRS 137 Ses@aseam2N 1613, 2N 1711 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tamb = 25C (Unless otherwise stated) (Sauf indications contraires} Test conditions Conditions de mesure Min. Typ. Max. Vep = 60V 10 nA le =0 Collector-base cut-off current lepo Courant rsiduel collecteur-base Vv, cB = 60 V le =0 10 BA Tamb = 150C = 2 Emitter-base cut-off current Veg =5V eso N 1613 10 nA Courant rsiduel metteur-base lo =0 ON 1711 5 Collector-base breakdown voltage Iq = 100 HA Vv. Tension de claquage collecteur-base le =0 {BR)CBO 78 Vv Collector-emitter breakdown voltage lo = 100 mA v Tension de claquage collecteur-metteur Ree =1092 (BR)CER 50 Vv Emitter-base breakdown voltage 'g =0 VipRyEBO 7 7 Tension de claquage metteur-base le = 100 uA Vee = 10V ce= 10 2N 1711} 20 45 Io =10uA = 2N 1613| 20 45 Vog = 10V hore Ic = 100 nA 2N1711| 35 70 Vee = 10V 2N 1613) 35 75 Ig =10maA 2N 1711] 75 130 Static forward current transfer ratio Valeur statique du rapport ce transfert Vo f=10V 2N 1613] 40 120 direct du courant 1 = 150 mA c = htm ae L2N 1711} 100 300 ho1e Veg = 10V 2N 1613; 20 40 le = 500mA 2N1711| 40 100 Vee = 10V 2N 1613] 20 lo =10mA hore Tamb = 58C 2N 1711] 35 = 2N 1613 0,3 1,5 Collector-emitter saturation voltage ic in, ne VoEsat* V Tension de saturation collecteur-metteur B = m. 2N 1711 02 1,5 Base-emitter saturation volta Ig = 150mA Vv * Tension de saturation bese-merteur Ig =15mA BEsat 99 13 v * Pulsed t,=300us < 2% impulsions 2/6 1382N 1613, 2N 1711 DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES DYNAMIQUES (pour petits signaux) Test conditions ; Conditions de mesure Min. Typ. Max. Voge =5V 2N 1613| 30 100 lo =1mA = 1kH: 2N 1711] 50 200 Forward current transfer ratio f 1 kHz hate Repport de transfert direct du courant Veg = 10V 2N 1613] 35 160 lo =5mA f =1kHz 2N 1711] 70 300 Vap =5V CB Ig =1maA 24 34 Input impedance f= TkHz hy 4b Q impdance dentre Veg = 10V Ic =5mA 4 8 f = 1kHz Ves =5V 2N 1613 3 lo =1mA Reverse voltage transfer ratio FST kHz hiap anit 5 4 Rapport de transfert inverse de la tension Vop =10V 2N 1613 3 10 lo =5mA f =1kHe 2N 1711 5 Vep =5V cB Io =1mA 0,1 0,5 Output admittance f = kHz hop us Admittance de sortie Vv cB = 10V Iq =5mA 0,1 1 f =1 kHz Vee =10V 2N 1613] 60 160 Transition frequency In =50mA fr MHz Frquence de transition f = 20MHz 2N 1711 70 200 Veg = 10V Output capacitance le =0 C225 25 pF Capacit de sortie f = 1MHz Ves =0,5V Input capacitance = c Capacit dentre Ic 9 1b 80 pF f =1MHz Vee = 10V CE Noise figure Io =0,3mA 2N 1613 12 Facteur de bruit Rg = 5102 F dB foo = tkHz 2N 1711 8 Af =1Hz 3/6 1392N 1613, 2N 1711 TYPICAL CHARACTERISTICS CARACTERISTIQUES TYPIQUES (mA) 90 80 70 60 40 30 20 0 10 20 30 40 50 Voglv) (mA) 2N 1613 3 0 1 2 38 4 5 ven (mA) 450 400 350 300 250 200 150 100 50 2N 1711 50 Vegtv) 5 Vogt) 416 1402N 1613, 2N 1711 TYPICAL CHARACTERISTICS CARACTERISTIQUES TYPIQUES hone +150 oO 160 120 +26C 80 Le Tamb = B5C 40 107 1071 10 10! 10? Igima) 21 300 250 200 150 100 102 107 10 10" 10? igima) 5/6 1412N 1613, 2N 1711 TYPICAL CHARACTERISTICS CARACTERISTIQUES TYPIQUES C25 (pF) 24 20 16 0 1 10 10 Veal) 6/6 142