April 2006 Rev 1 1/8
STTH2002CRC
High efficiency ultrafast diode
Main product characteristics
Features and benefits
■Suited for SMPS
■Low losses
■Low forward and reverse recovery times
■High surge current capability
■High junction temperature
Description
Dual center tab rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in I²PAK double track, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
Order codes
IF(AV) 2 x 10 A
VRRM 200 V
Tj (max) 175° C
VF (typ) 0.76 V
trr (typ) 20 ns
Part Number Marking
STTH2002CRC STTH2002C
STTH2002CRC-TR STTH2002C
I PAK double track
STTH2002CRC
2
A1 K
A2
www.st.com
Characteristics STTH2002CRC
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1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.68 x IF(AV) + 0.017 IF2(RMS)
Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 200 V
IF(RMS) RMS forward current Per diode 32 A
IF(AV) Average forward current, δ = 0.5 Per diode Tc = 150° C 10 A
Per device Tc = 145° C 20
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A
Tstg Storage temperature range -65 to + 175 ° C
TjMaximum operating junction temperature 175 ° C
Table 2. Thermal parameters
Symbol Parameter Value Unit
Rth(j-c) Junction to case Per diode 2.5
° C/WTo t a l 1 . 4
Rth(c) Coupling 0.25
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
IR(1) Reverse leakage current Tj = 25° C VR = VRRM
10 µA
Tj = 125° C 10 100
VF(2) Forward voltage drop
Tj = 150° C IF = 10 A 0.76 0.85
Tj = 25° C IF = 20 A 1.2 V
Tj = 150° C 0.90 1.02
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
STTH2002CRC Characteristics
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Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
trr Reverse recovery time
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25 °C 20 25
ns
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25 °C 28 35
IRM Reverse recovery current IF = 10 A, dIF/dt = 200 A/µs,
VR = 160 V, Tj = 125 °C 5.8 7.5 A
tfr Forward recovery time IF = 10 A, dIF/dt = 50 A/µs
VFR = 1.1 x VFmax, Tj = 25 °C 180 ns
VFP Forward recovery voltage IF = 10 A, dIF/dt = 50 A/µs,
VFR = 1.1 x VFmax, Tj = 25 °C 1.6 V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
0
20
40
60
80
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
M
(A)
T
d=tp/T tp
IM
T
δ=tp/T tp
IM
P = 5 WP = 5 W
P = 3 WP = 3 W
P = 10 WP = 10 W
δ
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
Figure 3. Forward voltage drop versus
forward current (maximum values)
Figure 4. Relative variation of thermal
impedance, junction to case,
versus pulse duration
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
FM
(A)
Tj=25°C
Tj=150°C
VFM(V)
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z
th(j-c)
/R
th(j-c)
Single pulse
I²PAK
tp(s)
Characteristics STTH2002CRC
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Figure 5. Junction capacitance versus
reverse applied voltage (typical
values)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
10
100
1 10 100 1000
C(pF)
F=1MHz
Vosc=30mVRMS
Tj=25°C
V
R
(V)
0
50
100
150
200
10 100 1000
Q
RR
(nC)
IF=10A
VR=160V
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
Figure 7. Reverse recovery time versus
dIF/dt (typical values)
Figure 8. Peak reverse recovery current
versus dIF/dt (typical values)
Figure 9. Dynamic parameters versus
junction temperature
0
10
20
30
40
50
60
70
80
10 100 1000
t
RR
(ns)
IF=10A
VR=160V
Tj=125°C
Tj=25°C
dI
F
/dt(A/µs)
0
2
4
6
8
10
12
10 100 1000
I
RM
(A)
IF=10A
VR=160V
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
Q
RR
;I
RM
[T
j
]/Q
RR
;I
RM
[T
j
=125°C]
IRM
QRR
IF=10A
VR=160V
Tj(°C)
STTH2002CRC Ordering information scheme
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2 Ordering information scheme
STTH 20 02 xxx
Ultrafast switching diode
Average forward current
20 = 20 A
02 = 200 V
CRC = I PAK double track
2
Repetitive peak reverse voltage
Package
Package information STTH2002CRC
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3 Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
Table 5. I2PAK double track dimensions
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.018 0.024
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
E 10 10.40 0.394 0.409
G 4.88 5.28 0.192 0.208
L 16.70 17.5 0.657 0.689
L2 1.27 1.40 0.050 0.055
L3 13.82 14.42 0.544 0.568
E
L2
A
Cropping
direction
C2
D
A1
C
LL3
GB2
B
STTH2002CRC Ordering information
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4 Ordering information
5 Revision history
Part Number Marking Package Weight Base qty Delivery mode
STTH2002CRC STTH2002C I2PAK DT 1.48 g 50 Tube
STTH2002CRC-TR STTH2002C I2PAK DT 1.48 g 1000 Tape and reel
Date Revision Description of Changes
05-Apr-2006 1 First issue
STTH2002CRC
8/8
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