MOS FET Relays Technical Information 1
MOS FET Relays
Technical Information
Introduction
New models with a wider range of characteristics provide an array of
solutions, meeting the needs of today’s high performance applications
.
Our expanded range of MOS FET relays, Type G3VM, sets the
benchmark in Solid State Relays (SSRs). Products are manufactured
using the latest advances in automated production and include a
variety of improved construction technologies within the areas of the
input LED, PDA (Photo Diode Array used as a photocoupler) and
MOS FET chips used in the load switching circuit. As a result, further
reductions in package size and power requirements have been
achieved.
Combining the advantages of mechanical and solid state technology,
the new G3VM range gives you unprecedented capability to design.
All models featured include a double MOS FET load circuit, enabling
the designer complete versatility since it makes no difference
whether an AC or DC load in either direction is connected (Connec-
tion A). Thus, the MOS FET relay is a fully functional alternative to an
electromechanical relay with minimal additional drive circuitry.
The built-in Current Limit Function (CLR models) has many uses.
Traditionally used to clamp excessive over current fault conditions in
telecom equipment, this feature can also be used to good effect to
resist transient and short circuit conditions.
MOS FET relays are the ideal data and telecommunication solution
for line seizing, line switching, hook switching, Data Access Arrange-
ment (DAA) function, line transformer circuit control and other feature
phone functions. Central office applications require high reliability
and long life. Here the G3VM is ideal for use in the areas of Sub-
scriber Line Interfaces (SLICs) Multiplexers and Routers. In addition,
Local Area Networks (LANs) and Network Termination Units (NTUs)
including Set-Top Boxes (STBs) and Remote Metering Systems
(RMS) can take advantage of the G3VMs’ small size and low ON
resistance.
Advances in performance and cost reduction enable MOS FET
relays to be considered as good alternatives to Reed Relays in appli-
cation areas such as security motion detectors (standard and anti-
mask PIRs), and Automated Test Equipment (ATE) probe cards.
Glossary
Term Symbol Description
LED forward current IFRated current that can flow continuously in the forward direction of the LED
Repetitive peak LED forward
current
IFP Rated current that can flow momentarily in the forward direction of the LED
LED forward current
reduction rate
<IF/°C Rated change of forward current flowing through the LED relative to ambient temperature above 25°C
LED reverse voltage VRRated reverse voltage that can be applied between the anode and the cathode
Connection temperature TJRated temperature that can be allowed in the junction of the LED, Photodetector or MOS FET(s)
Load voltage (AC peak / DC) VOFF Rated voltage that can be applied between the MOS FET's output terminals in the OFF state
Continuous load current IORated current that can flow between the MOS FET's output terminals in the ON state
ON current reduction rate <ION/°C Rated change of load current flowing between MOS FET(s) output terminals relative to ambient tem-
perature above 25°C
Dielectric strength between
input and output
VI-O Isolation voltage between input and output terminals for a specified time
Operating temperature TaAmbient temperature range in which the relay may be operated without impairment
Storage temperature Tstg Ambient temperature range in which the relay may be stored while not operating
LED forward voltage VFVoltage drop between the LED's anode and cathode at a certain forward current
LED reverse current IRLeakage current flowing in the LED's reverse direction (between cathode and anode)
Capacity between (LED)
terminals
CTElectrostatic capacitance between the anode and the cathode terminals of the LED
Trigger LED forward current IFT Minimum value of input current necessary to put the output MOS FET(s) in to the ON state
Maximum resistance with
output ON
RON Resistance between the MOS FET's output terminals specified with reference to ON state current
Current leakage when the
relay is open
ILEAK Leakage current flowing between the MOS FET's output terminals in the OFF state
Output Capacitance Coff Electrostatic capacitance between the output terminals in the OFF state
Capacity between I/O
terminals
CI-O Electrostatic capacitance between the input and output terminals of the relay
Insulation resistance RI-O Resistance between the input and output terminals at the specified voltage value
Tur n - O N t i m e tON Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from OFF
to ON state
Turn-OFF time tOFF Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from ON
to OFF state
Recommended Load Voltage
(AC peak / DC)
VDD Rated load voltage that can be applied between the MOS FET's output terminals
2MOS FET Relays Technical Information
Precautions
!WARNING
Be sure to turn OFF the power when wiring the Relay, otherwise
an electric shock may be received.
!WARNING
Do not touch the charged terminals of the SSR, otherwise an elec-
tric shock may be received.
!CAUTION
Do not apply overvoltage or overcurrent to the I/O circuits of the
SSR, otherwise the SSR may malfunction or burn.
!CAUTION
Be sure to wire and solder the Relay under the proper soldering
conditions, otherwise the Relay in operation may generate exces-
sive heat and the Relay may burn.
!CAUTION
Electrostatic sensitive devices. Keep in original packaging until re-
quired to use. Avoid touching device terminals. Take static han-
dling precautions during processing.
Typical Relay Driving Circuit Examples
Use the following formula to obtain the LED current limiting resis-
tance value to assure that the relay operates accurately.
Use the following formula to obtain the LED forward voltage value to
assure that the relay releases accurately.
Protection from Surge Voltage on the
Input Terminals
If any reversed surge voltage is imposed on the input terminals,
insert a diode in parallel to the input terminals as shown in the follow-
ing circuit diagram and do not impose a reversed voltage value of 3 V
or more.
Surge Voltage Protection Circuit Example
Appearance Examples
SOP (Small Outline Package)
DIP (Dual Inline Package)
OMRON logo Model name
LOT No.
OMRON logo Model name
LOT No.
SSOP (Shrink Small Outline Package)
OMRON mark
Model name
LOT No.
211
228
Note: "G3VM" is not printed on the
actual product.
Load
C-MOS
Transistor
10 to 100 kΩLoad
R1 =VCC VOL VF (ON)
5 to 20 mA
VF (OFF) = VCC VOH < 0.8 V
MOS FET Relays Technical Information 3
Protection from Spike Voltage on the
Output Terminals
If a spike voltage exceeding the absolute maximum rated value is
generated between the output terminals, insert a C-R snubber or
clamping diode in parallel to the load as shown in the following circuit
diagram to limit the spike voltage.
Spike Voltage Protection Circuit Example
Unused Terminals (6-pin models only)
Terminal 3 is connected to the internal circuit. Do not connect any-
thing to terminal 3 externally.
Pin Strength for Automatic Mounting
In order to maintain the characteristics of the relay, the force imposed
on any pin of the relay for automatic mounting must not exceed the
following.
In direction A: 1.96 N
In direction B: 1.96 N
Load Connection
Do not short-circuit the input and output terminals while the relay is
operating or the relay may malfunction.
Guidelines for Mounting Devices on PCBs
Cleaning
When ions in the flux enter into the product during soldering, fluctua-
tion in device performance or corrosion may occur. Be sure to wash
away any flux residue which contains Cl or Na ions.
The following types of solvents are recommended for cleaning the
flux:
Asahi Clean AK-225AES
Kao Cleanthru 750H
Pine-Alpha ST-100S
Cleaning Conditions
Cleaning conditions and precautions may vary according to product
specifications.
General precautions for dip cleaning
Dipping time varies according to the solvent used.
However, as a general guideline, it is recommended that the dip
time be limited to three minutes.
General precautions for ultrasonic cleaning
When ultrasonic cleaning is conducted for an excessively long
time, contact between the product resin and the metal leads may
lessen. Also, excessive ultrasonic stress may cause cracks in the
pellet.
It is recommended that the applied stress be minimized.
Recommended conditions for standard ultrasonic cleaning
Frequency: 27kHz to 29kHz
Output: 0.25 W/cm2 or less
Time: 30 seconds or less
Temperature: 50°C (may vary according to the type of solvent used)
Cleaning must be conducted with the printed circuit board or device
floating on the solvent, so as to avoid direct contact between the PCB
or device and the ultrasonic vibrator.
Handling Precautions
Do not touch the device’s mark-bearing surface with your hand or
with a brush while cleaning or applying cleaning liquid to the device.
This may erase device markings. It is important to confirm that nei-
ther the solvent used for cleaning nor the cleaning conditions will
damage the device package.
+
1
2
3
6
5
4
AC
+
+
DC D
C
Or: Or:
Load
Load
Load
+
1
2
3
6
5
4
+
DC
+
1
2
3
6
5
4
+
DC
+
1
2
3
6
5
4
+
DC
Load
AC Connection
DC Single Connection
DC Parallel Connection
4MOS FET Relays Technical Information
Solder Mounting
Perform solder mounting under the following recommended conditions
to prevent the temperature of the relays from rising, causing possible
damage to the relays.
Flow Soldering
Through Hole Packages (Once only)
Note: It is recommended that the suitability of solder mounting be
verified under actual conditions
Reflow Soldering
Surface Mount Packages (Twice max.)
*Measured from the top surface of the relay package
Note: 1. It is recommended that the suitability of solder mounting be
verified under actual conditions
2. Tape cut SSOP’s are packaged without humidity resistance.
Use manual soldering to mount them.
Manual Soldering (Once only)
Manually solder at 350°C for 3s or less or at 260°C for 10s or less.
SSOP Handling Precautions
Humidity-resistant Packaging
Component cases can crack if surface-mounted components that
have absorbed moisture are subjected to thermal stress when
mounting. To prevent this, observe the following precautions.
1. Unopened components can be stored in the packaging at
5 to 30°C and a humidity of 90% max. However, they should
be used within 12 months.
2. After the packaging has been opened, components can be
stored at 5 to 30°C and a humidity of 70% max. However, they
should be mounted within 168 hours.
3. If, after opening the packaging, the humidity indicator turns
pink to the 30% mark or the expiration date is exceeded, then
bake the components while they are still on the taping reel
and use them within 72 hours. Do not bake the same compo-
nents more than once.
Baking conditions: 60 ± 5°C, 64 to 72 hours
4. If the same components are baked repeatedly, then the tape
detachment strength will change, causing potential problems
when mounting. Use caution when mounting under these
conditions.
5. When mounting using dehumidifying measures, always take
countermeasures against component damage from static
electricity.
6. Do not throw or drop the components. If the laminated pack-
aging material is damaged, airtightness will be lost.
7. Tape cut SSOP’s are packaged without humidity resistance.
Use manual soldering to mount them.
Solder type Preheating
Temperature
Solder
Temperature
Lead solder
(SnPb)
150°C,
60 to 120s
260°C,
10s max.
Lead-free solder
(SnAgCu)
150°C,
60 to 120s
260°C,
10s max.
Solder type Preheating
Temperature*
Soldering
Temperature*
Lead solder
(SnPb)
140 to 160°C,
60 to 120s
210°C,
30s max.
Peak,
240°C max.
Lead-free solder
(SnAgCu)
180 to 190°C,
60 to 120s
230°C,
30 to 50s
Peak,
260°C max.
MEMO
MOS FET Relays Technical Information
OMRON ON-LINE
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USA - http://www.components.omron.com
Cat. No. X302-E-1 Printed in USA
OMRON ELECTRONIC
COMPONENTS LLC
55 E. Commerce Drive, Suite B
Schaumburg, IL 60173
847-882-2288
12/10 Specifications subject to change without notice
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