© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C60 A
IDM TC= 25°C, pulse width limited by TJM 150 A
IATC= 25°C60 A
EAS TC= 25°C3 J
PDTC= 25°C 960 W
TJ-55...+150 °C
TJM 150 °C
Tstg -55...+150 °C
TL1.6mm (0.063 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (IXTK) 1.13/10 Nm/lb.in.
FCMounting Force (IXTX) 20..120 / 4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 100 mΩ
LinearL2TM Power
MOSFET w/Extended
FBSOA
IXTK60N50L2
IXTX60N50L2
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 500V
ID25 = 60A
RDS(on) < 100mΩΩ
ΩΩ
Ω
DS100087(12/08)
G = Gate D = Drain
S = Source TAB = Drain
TO-264
GDS
GDS
PLUS247
(TAB)
(TAB)
Preliminary Technical Information
Features
zDesigned for linear operation
zInternational standard packages
zAvalanche rated
zGuaranteed FBSOA at 75°C
Advantages
•Easy to mount
•Space savings
•High power density
Applications
zSolid state circuit breakers
zSoft start controls
zLinear amplifiers
zProgrammable loads
zCurrent regulators
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK60N50L2
IXTX60N50L2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 18 25 32 S
Ciss 24 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1325 pF
Crss 172 pF
td(on) 40 ns
tr 40 ns
td(off) 165 ns
tf 38 ns
Qg(on) 610 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 130 nC
Qgd 365 nC
RthJC 0.13 °C/W
RthCS 0.15 °C/W
Safe Operating Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA VDS = 400V, ID = 1.1A, TC = 75°C, tp = 3s 440 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 60 A
ISM Repetitive, pulse width limited by TJM 240 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 980 ns
IRM 73 A
QRM 35.8 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 0.5Ω (External)
TO-264 (IXTK) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots;
but also may yet contain some information supplied during a pre-production design evaluation.
IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IF = 60A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXTX) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXTK60N50L2
IXTX60N50L2
Fig. 1. Outp ut C har acteri sti cs
@ 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
DS
- Volt s
I
D
- A m p ere s
V
GS
= 20V
14V
12V
10V
7
V
8
V
5
V
6
V
9
V
Fig. 2. Extended Output Ch aracteristics
@ 25º C
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- A mp e res
V
GS
= 20V
14V
12V
7
V
6
V
9
V
10
V
8
V
Fi g . 3. Ou tp u t C h ar acter i stic s
@ 125ºC
0
5
10
15
20
25
30
35
40
45
50
55
60
012345678910
V
DS
- Volts
I
D
- Am peres
V
GS
= 20V
12V
10V
9V
6
V
8V
7V
5
V
Fig. 4. RDS(on) Normalized to ID = 30A Valu e
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Deg rees Centi grad e
R
DS(on)
- N orma lize d
V
GS
= 10V
I
D
= 60A
I
D
= 30A
Fig. 5. RDS(on) Normalized to ID = 30A Val ue
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 20 40 60 80 100 120 140 160
I
D
- Amperes
R
DS(on)
- N orma lize d
V
GS
= 10V
20V - - - - T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maxim um Drain Curren t vs.
Case Temp er a tu r e
0
5
10
15
20
25
30
35
40
45
50
55
60
65
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A m p ere s
IXYS REF: T_60N50L2(9R)12-08-08-B
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK60N50L2
IXTX60N50L2
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GS
- Volts
I
D
- A mpe res
T
J
= 125ºC
25ºC
- 40ºC
Fi g . 8. Transco n d u ctan ce
0
5
10
15
20
25
30
35
40
45
50
55
0 102030405060708090100110
I
D
- Amp er es
g
f s
- Siem ens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 9. F o r war d Vo l tag e D r o p of
Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
200
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600 700 800 900
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 250V
I
D
= 30A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - P icoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mu m Tran si en t Thermal
Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2008 IXYS CORPORATION, All rights reserved
IXTK60N50L2
IXTX60N50L2
IXYS REF: T_60N50L2(9R)12-08-08-B
Fig. 13. Fo rward-Bias Safe Operating Area
@ T
C
= 25ºC
0.1
1.0
10.0
100.0
1,000.0
10 100 1000
V
DS
- Volts
I
D
- Am peres
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
100ms
DC
Fig. 14. F orwar d-Bias Safe Operating Area
@ T
C
= 75ºC
0.1
1.0
10.0
100.0
1,000.0
10 100 1000
V
DS
- Volts
I
D
- Am peres
T
J
= 150ºC
T
C
= 75ºC
Sing le Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
100ms
DC