DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD48 NPN/PNP resistor-equipped transistors Product specification Supersedes data of 1999 Apr 22 2001 Feb 1 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD48 FEATURES * Transistors with different polarity and built-in bias resistors 6 handbook, halfpage - TR1 (NPN): R1 = 47 k; R2 = 47 k 6 5 5 4 4 R1 R2 TR2 TR1 - TR2 (PNP): R1 = 2.2 k; R2 = 47 k R2 1 * No mutual interference between the transistors 2 Top view * Simplification of circuit design R1 3 MAM343 1 2 3 Fig.1 Simplified outline (SC-88) and symbol. * Reduces number of components and board space. PINNING APPLICATIONS PIN * Especially suitable for space reduction in interface and driver circuits 2, 5 * Inverter circuit configurations without use of external resistors. DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 plastic package. 2001 Feb 1 6, 3 DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 1, 4 MBK120 Fig.2 MARKING Equivalent inverter symbol. TYPE NUMBER PUMD48 2 MARKING CODE 4t8 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD48 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity open emitter - 50 V collector-emitter voltage open base - 50 V emitter-base voltage open collector - 10 V VCBO collector-base voltage VCEO VEBO VI input voltage TR1 positive - +40 V negative - -10 V input voltage TR2 positive - +5 V negative - -12 V - 100 mA - 100 mA - 200 mW IO output current (DC) ICM peak collector current Ptot total power dissipation Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C - 300 mW Tamb 25 C; note 1 Per device Ptot total power dissipation Tamb 25 C Notes 1. Refer to SC-88 standard mounting conditions. 2001 Feb 1 3 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD48 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE UNIT 416 K/W thermal resistance from junction to ambient note 1 Note 1. Refer to SC-88 standard mounting conditions. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector cut-off current ICEO collector cut-off current IE = 0; VCB = 50 V - - 100 nA IB = 0; VCE = 30 V - - 1 A IB = 0; VCE = 30 V; Tj = 150 C - - 50 A A Transistor TR1 (NPN) IEBO emitter cut-off current IC = 0; VEB = 5 V - - 90 hFE DC current gain IC = 5 mA; VCE = 5 V 80 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 Vi(off) input-off voltage IC = 100 A; VCE = 5 V - 1.2 0.8 V Vi(on) input-on voltage IC = 2 mA; VCE = 0.3 V 3 1.6 - V R1 input resistor 33 47 61 k R2 ------R1 resistor ratio 0.8 1 1.2 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz - - 2.5 pF A mV Transistor TR2 (PNP) IEBO emitter cut-off current IC = 0; VEB = -5 V - - 180 hFE DC current gain IC = -10 mA; VCE = -5 V 100 - - VCEsat collector-emitter saturation voltage IC = -5 mA; IB = -0.25 mA - - -100 mV Vi(off) input-off voltage IC = -100 A; VCE = -5 V - -0.6 -0.5 V Vi(on) input-on voltage IC = -5 mA; VCE = -0.3 V -1.1 -0.75 - V R1 input resistor 1.54 2.2 2.86 k R2 ------R1 resistor ratio 17 21 26 Cc collector capacitance - - 3 2001 Feb 1 IE = ie = 0; VCB = -10 V; f = 1 MHz 4 pF Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors MDA972 10-1 handbook, halfpage MDA973 103 handbook, halfpage PUMD48 (2) (1) hFE VCEsat (V) (3) 102 (1) (2) (3) 10 1 10-1 1 10 IC (mA) 10-2 -1 10 102 1 TR1 (NPN); VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -40 C. TR1 (NPN); IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -40 C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MDA975 10 10 102 Collector-emitter saturation voltage as a function of collector current; typical values. MDA974 102 handbook, halfpage handbook, halfpage IC (mA) Vi(on) (V) Vi(off) (V) 10 (1) (2) 1 (3) (1) 1 (3) (2) 10-1 10-2 10-1 1 IC (mA) 10-1 10-1 10 TR1 (NPN); VCE = 5 V. (1) Tamb = -40 C. (2) Tamb = 25 C. (3) Tamb = 100 C. TR1 (NPN); VCE = 0.3 V. (1) Tamb = -40 C. (2) Tamb = 25 C. (3) Tamb = 100 C. Fig.5 Fig.6 Input-off voltage as a function of collector current; typical values. 2001 Feb 1 5 1 10 IC (mA) 102 Input-on voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors MDA977 103 handbook, halfpage (1) hFE PUMD48 MDA976 -103 handbook, halfpage (2) VCEsat (mV) (3) 102 -102 (1) 10 (3) (2) 1 -10-1 -1 -10 IC (mA) -10 -10-1 -102 -1 TR2 (PNP); VCE = -5 V. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -40 C. TR2 (PNP); IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -40 C. Fig.7 Fig.8 DC current gain as a function of collector current; typical values. MDA979 -104 handbook, halfpage Vi(on) (mV) (mV) -102 MDA978 -103 (1) IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. -104 andbook, halfpage Vi(off) -103 -10 (1) (2) (2) (3) (3) -102 -10-2 -10-1 -1 IC (mA) -102 -10-1 -10 -1 -10 IC (mA) -102 TR2 (PNP); VCE = -5 V. (1) Tamb = -40 C. (2) Tamb = 25 C. (3) Tamb = 100 C. TR2 (PNP); VCE = -0.3 V. (1) Tamb = -40 C. (2) Tamb = 25 C. (3) Tamb = 100 C. Fig.9 Fig.10 Input-on voltage as a function of collector current; typical values. Input-off voltage as a function of collector current; typical values. 2001 Feb 1 6 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD48 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2001 Feb 1 REFERENCES IEC JEDEC EIAJ SC-88 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD48 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Feb 1 8 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors NOTES 2001 Feb 1 9 PUMD48 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors NOTES 2001 Feb 1 10 PUMD48 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors NOTES 2001 Feb 1 11 PUMD48 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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