, SGS-THOMSON JT SGS "THOMSON TYN 0516 ---> TYN 816 SCR FEATURES a HIGH SURGE CAPABILITY a HIGH ON-STATE CURRENT a HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 0516 ---> TYN 816 Family Silicon Con- trolled Rectifiers are high performance glass passi- vated chips technology. This general purpose Family Silicon Controlled TO220AB Rectifiers is designed for power supply up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current Te = 95 C 16 A (180 conduction angle) IT(AV) Average on-state current Te = 95 C 10 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 167 A ( Tj initial = 25C ) tp = 10 ms 160 2t I2t value tp = 10 ms 128 A2s dl/dt Critical rate of rise of on-state current 100 A/lus Gate supply : lq =100mA_ diG/dt = 1 A/us Tstg Storage and operating junction temperature range - 40 to+ 150 C Tj - 40 to+ 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 260 C from case Symbol Parameter TYN Unit 0516 116 216 416 616 816 VDRM Repetitive peak off-state voltage 50 100 200 400 600 800 Vv VRRM Tj = 125C March 1995 1/4TYN 0516 ---> TYN 816 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) |Junction to ambient 60 C/W Rth (j-c) DC |Junction to case for DC 2.0 C/W GATE CHARACTERISTICS (maximum values) Pg (AV) = 1W Pgm = 10W (tp=20 us) IFqm =4A(tp=20ns) VRGM= 5 V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IGT Vp=12V) (DC) RL=330 Tj=25C MAX 25 mA VGT Vp=12V) (DC) R_=330 Tj=25C MAX 1.5 Vv VeD Vp=VDRM RL=3.3kQ Tj= 125C MIN 0.2 Vv tgt Vp=VpRM_ Iq = g90mA Tj=25C TYP 2 ys diG/dt = 0.8A/us IL Iq= 1.2 IGT Tj=25C TYP 70 mA IH IT= 100mA = gate open Tj=25C MAX 40 mA VT ITM= 32A_ tp= 380us Tj=25C MAX 1.6 Vv IDRM VDRM_ Rated Tj=25C MAX 0.01 mA IRRM VRRM_ Rated Tj= 125C 2 dv/dt Linear slope up to VD=67%VDRM Tj= 125C MIN 500 V/us gate open tq Vp=67%VDRM_~ !TM= 32A_ VR= 25V Tj= 125C TYP 70 us diITM/dt=30 A/us dVp/dt= 50V/us 2/4 ky7 SGS-THOMSON Pr PMIGROE Be WSTYN 0516 ---> TYN 816 Fig.1 : Maximum average power dissipation versus average on-state current. P (Ww) 18 360 1e-- | { 7 the Ee 10 LL Ql= 180 | a LSALE Qi: 120 / Ba Qi- 90 4 / Q- 60 Oly 30 Ittav) (A) oO 1 0 4 8 12 16 Fig.3 : Average on-state current versus case temperature. I Tay) (A) 20 Dc 15 * 10 a! = 180 NY 5 Tcase(C) o | 9 25 50 75 100 126 Fig.5 : Relative variation of gate trigger current versus junction temperature. IgtI Til a Totltis26C] ~s Ih Tj=25 C) 2.5 2 Igt iN PRS 1 PAS Ih = | Pe + 0.5 t > Tj (C) 1 1 1 1 0 -40-30-20-10 0 16 20 30 40 60 60 70 80 SO 100110120130 ir $8 PMNS we sais ll Ah: Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact. P (W) Tease ("C) 18 Rth0 "C/W 16 2C/w 14 C/W | 95 12 10 L405 BC @w-180 L415 Tamb (C) o n 4+ @& H125 Go 20 40 60 80 100 120 140 Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 Zth(j-c) 0.1 Zth(j-a tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 16+2 5542 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. 160 Tj initial = 25C | [1 120 mo 80 PAL 40 oy Number of cycles 0 Lt ttt | 1 10 100 1900 THOMSON 3/4 ELEeTR esTYN 0516 ---> TYN 816 Fig.7 : Non repetitive surge peak on-state current for a Fig.8 : On-state characteristics (maximum values). sinusoidal pulse with width : t < 10 ms, and corresponding value of |2t. I tsm CA). It (A s) Ith {A) 1000 1000 Tj initial = 25C Tj initial 25C ITSM 100 Tj max __ Tj max 10 Vio = 0.82V Rt -0.0240 100 ' Vimty) o 1 2 3 4 5 PACKAGE MECHANICAL DATA TO220AB Plastic REF. DIMENSIONS Millimeters Inches Min. | Max. | Min. | Max. A 10.00 | 10.40 | 0.393 | 0.409 B 15.20 | 15.90 | 0.598 | 0.625 C 13.00 | 14.00 | 0.5171 | 0.551 D 6.20 | 6.60 | 0.244 | 0.259 F 3.50 | 4.20 | 0.137 | 0.165 G 2.65 | 2.95 | 0.104 | 0.116 H 4.40 | 4.60 | 0.173 | 0.181 | 3./5 | 3.85 | 0.147 | 0.151 J 1.23 | 1.32 | 0.048 | 0.051 L 0.49 | 0.70 | 0.019 | 0.027 M 2.40 | 2.72 | 0.094 | 0.107 N 4.80 | 5.40 | 0.188 | 0.212 0 1.14 | 1.70 | 0.044 | 0.066 P 0.61 0.88 | 0.024 | 0.034 Cooling method :C Recommended torque value : 0.8 m.N. Marking : type number Maximum torque value : 1 m.N. Weight : 23g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 MIGROS. BET