Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 13 Publication Order Number:
MUN2111T1/D
1
MUN2111T1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC–59
package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: Class 1
ESD Rating – Machine Model: Class B
The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
°C/W
Thermal Resistance –
Junction-to-Ambient RθJA 540 (Note 1)
370 (Note 2) °C/W
Thermal Resistance –
Junction-to-Lead RθJL 264 (Note 1)
287 (Note 2) °C/W
Junction and Storage
Temperature Range TJ, Tstg 55 to +150 °C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
SC–59
CASE 318D
PLASTIC
MARKING DIAGRAM
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
PIN 2
BASE
(INPUT)
R1
R2
21
3
6x M
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
*See device marking table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
Preferred devices are recommended choices for future use
and best overall value.
6x = Specific Device Code*
M = Date Code
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2
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN2111T1 SC–59 6A 10 10 3000/Tape & Reel
MUN2112T1 SC–59 6B 22 22 3000/Tape & Reel
MUN2113T1 SC–59 6C 47 47 3000/Tape & Reel
MUN2114T1 SC–59 6D 10 47 3000/Tape & Reel
MUN2115T1 (Note 3) SC–59 6E 10 3000/Tape & Reel
MUN2116T1 (Note 3) SC–59 6F 4.7 3000/Tape & Reel
MUN2130T1 (Note 3) SC–59 6G 1.0 1.0 3000/Tape & Reel
MUN2131T1 (Note 3) SC–59 6H 2.2 2.2 3000/Tape & Reel
MUN2132T1 (Note 3) SC–59 6J 4.7 4.7 3000/Tape & Reel
MUN2133T1 (Note 3) SC–59 6K 4.7 47 3000/Tape & Reel
MUN2134T1 (Note 3) SC–59 6L 22 47 3000/Tape & Reel
MUN2136T1 SC–59 6N 100 100 3000/Tape & Reel
MUN2137T1 SC–59 6P 47 22 3000/Tape & Reel
MUN2140T1 (Note 3) SC–59 6T 47 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0) ICBO 100 nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO 500 nAdc
Emitter–Base Cutoff Current MUN2111T1
(VEB = 6.0 V, IC = 0) MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.20
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 Vdc
Collector–Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
MUN2111T1 Series
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5)
DC Current Gain MUN2111T1
(VCE = 10 V, IC = 5.0 mA) MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
120
60
100
140
140
250
250
5.0
15
27
140
130
150
140
250
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA) MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
MUN2136T1
MUN2137T1
(IC = 10 mA, IB = 5.0 mA) MUN2131T1
(IC = 10 mA, IB = 1.0 mA) MUN2116T1
MUN2132T1
MUN2134T1
MUN2140T1
VCE(sat)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) MUN2113T1
MUN2140T1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) MUN2136T1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) MUN2137T1
VOL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
MUN2111T1 Series
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 6) (Continued)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2115T1
MUN2116T1
MUN2131T1
MUN2132T1
MUN2140T1
VOH 4.9 Vdc
Input Resistor MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
61.1
k
Resistor Ratio MUN2111T1/MUN2112T1/MUN2113T1/
MUN2136T1
MUN2114T1
MUN2115T1/MUN2116T1/MUN2140T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
MUN2134T1
MUN2137T1
R1/R20.8
0.17
0.8
0.055
0.38
1.7
1.0
0.21
1.0
0.1
0.47
2.1
1.2
0.25
1.2
0.185
0.56
2.6
6. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
–50 0 50 100 150
TA, AMBIENT TEMPERATURE (5°C)
PD, POWER DISSIPATION (mW)
RθJA= 370°C/W
250
300
LOAD
+12 V
Figure 2. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2111T1
IC, COLLECTOR CURRENT (mA)
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 3. VCE(sat) vs. IC
0
TA= –25°C
25°C
12345678910
Figure 4. DC Current Gain
Figure 5. Output Capacitance Figure 6. Output Current vs. Input Voltage
Figure 7. Input Voltage vs. Output Current
0.01 20
0.1
1
0406080
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA= –25°C
75°C
75°C
50010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
TA=–2°5C 25°C
75°C
25°C
VCE = 10 V
VO = 5 V
Vin, INPUT VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 V
TA = 25°C
–25°C
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
Cob, CAPACITANCE (pF)
TA=75°C
IC/IB = 10
25°C
VO = 0.2 V
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2112T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TA= –25°C
Figure 8. VCE(sat) vs. ICFigure 9. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10110
0
TA=75°C
Figure 10. Output Capacitance
IC, COLLECTOR CURRENT (mA)
010 2030
75°C
100
10
1
0.1 40 50
Figure 11. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.00101234
Vin, INPUT VOLTAGE (VOLTS)
25°C
5678910
Figure 12. Input Voltage vs. Output Current
0.01
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
020 6080
75°C
25°C
TA= –25°C
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
VCE = 10 V
IC/IB = 10
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
25°C
75°C
–25°C
TA= –25°C
VO = 0.2 V
MUN2111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2113T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN
25°C
Figure 13. VCE(sat) vs. IC
1000
100
101 10 100
IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01010203040
Figure 15. Output Capacitance Figure 16. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001010
Vin, INPUT VOLTAGE (VOLTS)
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS) 1234 5 678 9
Figure 17. Input Voltage vs. Output Current
100
10
1
0.1010203040
IC, COLLECTOR CURRENT (mA) 50
TA= –25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
TA=75°C
VO = 0.2 V
TA=75°C
25°C
–25°C
25°C
–25°C
IC/IB=10
25°C
75°C
TA= –25°C
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
MUN2111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2114T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF) VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
10
1
0.101020304050
100
10
10246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
002468101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 18. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
020406080
Figure 19. DC Current Gain
Figure 20. Output Capacitance Figure 21. Output Current vs. Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 22. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.00
1
f = 1 MHz
lE = 0 V
TA = 25°C
TA= –25°C
25°C
TA=75°C25°C
VO = 5 V
VO = 0.2 V
TA= –25°C25°C
75°C
IC/IB=10
110
IC, COLLECTOR CURRENT (mA)
–25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 1520405060708090
100
75°C
–25°C
hFE, DC CURRENT GAIN
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN2131T1
Figure 23. VCE(sat) vs. IC
75°C
IC/IB =10
10
1
0.1
0.01 155020
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)
25 35
–25°C
25°C
30
Figure 24. DC Current Gain
IC/IB = 10
1
1000
100
10
10
100
1
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
75°C–25°C
25°C
Figure 25. Output Capacitance
0
8
6
20
4
2
0
VR, REVERSE BIAS VOLTAGE (V)
Cob, CAPACITANCE (pF)
10 55504030
10
12
453525155
f = 1 MHz
IE = 0 A
TA = 25°C
Figure 26. Output Current vs. Input Voltage
0
100
10
246
1
0.01
0.01 8
Vin, INPUT VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
VO = 5 V
75°C
TA = 25°C
–25°C
1357
Figure 27. Input Voltage vs. Output Current
VO = 0.2 V
0
10
10 20 25
1
0.1
IC, COLLECTOR CURRENT (mA)
TA = –25°C
75°C
25°C
515
Vin, INPUT VOLTAGE (VOLTS)
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1
75°C
25°C
–25°C
Figure 28. Maximum Collector Voltage versus
Collector Current Figure 29. DC Current Gain
Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 32. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
76543210 IC, COLLECTOR CURRENT (mA) 100101
100
10
1
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.2
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.1
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
121086420
1
10
181614 20
Vin, INPUT VOLTAGE (VOLTS)
IC/IB = 10
75°C
25°C
TA = –25°C
VCE = 10 V
75°C
25°C
TA = –25°C
VO = 5 V
VO = 0.2 V
75°C
25°CTA = –25°C
f = 1 MHz
IE = 0 V
TA = 25°C
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1
Figure 33. Maximum Collector Voltage versus
Collector Current Figure 34. DC Current Gain
Figure 35. Output Capacitance Figure 36. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050 IC, COLLECTOR CURRENT (mA) 100101
100
10
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.4
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
11987
100
151050
1
10
20 25
Vin, INPUT VOLTAGE (VOLTS)
504540
0.1
0.01
10
1.2 f = 1 MHz
IE = 0 V
TA = 25°C
75°C
25°C
TA = –25°C
VO = 5 V
75°C
25°C
TA = –25°C
VO = 0.2 V
75°C
25°C
TA = –25°C
IC/IB = 10 VCE = 10 V
75°C
25°C
TA = –25°C
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PD = TJ(max) – TA
RθJA
PD = 150°C – 25°C
370°C/W = 338 milliwatts
The soldering temperature and time should not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied dur-
ing cooling
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
INFORMATION FOR USING THE SC–59 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
SC–59 POWER DISSIPATION
The power dissipation of the SC–59 is a function of the
pad size. This can vary from the minimum pad size for sol-
dering to the pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined b y T J(max), the maximum rated junction temperature
of the die, RθJA, the thermal resistance from the device
junction t o ambient; and the operating temperature, TA. Us-
ing the values provided on the data sheet, PD can be calcu-
lated as follows.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one
can calculate the power dissipation of the device which in
this case is 338 milliwatts.
The 370°C/W assumes the use of the recommended foot-
print on a glass epoxy printed circuit board to achieve a
power dissipation of 338 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, the power dissipation can be doubled us-
ing the same footprint.
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
mm
inches
0.039
1.0
0.094
0.8
2.4
0.031
0.95
0.037
0.95
0.037
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STEP 1
PREHEAT
ZONE 1
RAMP"
STEP 2
VENT
SOAK"
STEP 3
HEATING
ZONES 2 & 5
RAMP"
STEP 4
HEATING
ZONES 3 & 6
SOAK"
STEP 5
HEATING
ZONES 4 & 7
SPIKE"
STEP 6
VENT
STEP 7
COOLING
200°C
150°C
100°C
50°C
TIME (3 TO 7 MINUTES TOTAL) TMAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205° TO 219°C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
100°C
150°C
160°C
140°C
Figure 38. Typical Solder Heating Profile
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
170°C
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session t o the next. Figure 7 shows a typical heating profile
for use when soldering a surface mount device to a printed
circuit board. This profile will vary among soldering
systems but it is a good starting point. Factors that can
affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
MUN2111T1 Series
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14
PACKAGE DIMENSIONS
SC–59
CASE 318D–04
ISSUE F
S
G
H
D
C
B
L
A
1
3
2
J
K
DIM
A
MIN MAX MIN MAX
INCHES
2.70 3.10 0.1063 0.1220
MILLIMETERS
B1.30 1.70 0.0512 0.0669
C1.00 1.30 0.0394 0.0511
D0.35 0.50 0.0138 0.0196
G1.70 2.10 0.0670 0.0826
H0.013 0.100 0.0005 0.0040
J0.09 0.18 0.0034 0.0070
K0.20 0.60 0.0079 0.0236
L1.25 1.65 0.0493 0.0649
S2.50 3.00 0.0985 0.1181
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
MUN2111T1 Series
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15
Notes
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16
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