Si2329DS Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8 * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 11.8 nC APPLICATIONS * Load Switch * Low Voltage Gate Drive - Low On-Resistance * Battery Management in Portable Equipment TO-236 (SOT-23) G 1 S 2 3 D Top View Si2329DS (D9)* * Marking Code Ordering Information: Si2329DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Symbol VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Maximum Power Dissipation ID IDM Pulsed Drain Current (t = 300 s) Continuous Source-Drain Diode Current Limit -8 5 - 6e -6 - 5.3b, c - 4.2b, c - 20 - 2.1 - 1.0b, c 2.5 1.6 1.25b, c 0.8b, c - 55 to 150 TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V A W C THERMAL RESISTANCE RATINGS Parameter 5 s Maximum Junction-to-Ambientb, d Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 C/W. e. Package limited. Document Number: 67690 S11-0865-Rev. A, 02-May-11 Symbol RthJA RthJF Typical 75 40 Maximum 100 50 Unit C/W www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2329DS Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 A -8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ ID = - 250 A Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 A Gate-Source Leakage IGSS VDS = 0 V, VGS = 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea a Forward Transconductance RDS(on) gfs V -6 mV/C 2.3 - 0.35 - 0.8 V 100 nA VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 55 C - 10 VDS - 5 V, VGS = - 5.3 V - 20 A A VGS = - 4.5 V, ID = - 5.3 A 0.025 0.030 VGS = - 2.5 V, ID = - 4.8 A 0.030 0.036 VGS = - 1.8 V, ID = - 4.2 A 0.037 0.048 VGS = - 1.5 V, ID = - 3.5 A 0.045 0.068 VGS = - 1.2 V, ID = - 0.8 A 0.060 0.120 VDS = - 4 V, ID = - 5.3 A 2.0 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1485 VDS = - 4 V, VGS = 0 V, f = 1 MHz 480 VDS = - 4 V, VGS = - 4.5 V, ID = - 5.3 A 19.3 29 11.8 18 435 VDS = - 4 V, VGS = - 2.5 V, ID = - 5.3 A tr Rise Time td(off) Turn-Off Delay Time VDD = - 4 V, RL = 0.9 ID = - 4.2 A, VGEN = - 4.5 V, Rg = 1 tf Fall Time 1.7 nC 6.2 f = 1 MHz td(on) Turn-On Delay Time pF 0.8 4.2 8.4 20 30 22 33 46 69 20 30 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 C - 2.1 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 20 IS = - 4.2 A IF = - 4.2 A, dI/dt = 100 A/s, TJ = 25 C A - 0.8 - 1.2 V 40 60 ns 26 39 nC 17 23 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67690 S11-0865-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2329DS Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 5 20 VGS = 5 V thru 2 V 4 VGS = 1.5 V ID - Drain Current (A) ID - Drain Current (A) 15 10 3 TC = 25 C 2 5 1 TC = 125 C VGS = 1 V TC = - 55 C 0 0 0 0.5 1 1.5 0 2 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 2800 0.090 VGS = 1.2 V RDS(on) - On-Resistance () 0.075 C - Capacitance (pF) 2100 0.060 VGS = 1.5 V VGS = 1.8 V 0.045 VGS = 2.5 V Ciss 1400 700 0.030 Coss Crss VGS = 4.5 V 0 0.015 0 5 10 15 0 20 2 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage 6 8 Capacitance 1.45 5 ID = 5.3 A ID = 5.3 A 4 VDS = 2 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 VDS - Drain-to-Source Voltage (V) 3 VDS = 4 V 2 VDS = 6.4 V 1.25 VGS = 4.5 V 1.05 0.85 1 VGS = 2.5 V 0 0 5 10 15 20 0.65 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 67690 S11-0865-Rev. A, 02-May-11 150 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2329DS Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 0.06 10 0.05 RDS(on) - On-Resistance () IS - Source Current (A) ID = 5.3 A TJ = 150 C 1 TJ = 25 C 0.04 TJ = 125 C 0.03 TJ = 25 C 0.1 0.0 0.02 0.2 0.4 0.6 0.8 1.0 1 2 0.5 8 0.4 Power (W) VGS(th) (V) 10 ID = 250 A 0.3 0.2 6 4 2 0 25 50 75 100 5 On-Resistance vs. Gate-to-Source Voltage 0.6 - 25 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.1 - 50 3 125 0 0.01 150 TA = 25 C 0.1 1 10 100 1000 Time (s) TJ - Temperature (C) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1 s, 10 s DC 0.1 TC = 25 C Single Pulse 0.01 0.1 BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 67690 S11-0865-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2329DS Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 9.0 ID - Drain Current (A) 7.5 Package Limited 6.0 4.5 3.0 1.5 0.0 0 25 50 75 100 125 150 TC - Case Temperature (C) 3 1.0 2.4 0.8 1.8 0.6 Power (W) Power (W) Current Derating* 1.2 0.6 0.4 0.2 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (C) TA - Ambient Temperature (C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67690 S11-0865-Rev. A, 02-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2329DS Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67690. www.vishay.com 6 Document Number: 67690 S11-0865-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3 0.055 0.0374 Ref 0.020 Ref 8 3 8 ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 AN807 Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In converting this footprint to the pad set for a power device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. ambient air. This pattern uses all the available area underneath the body for this purpose. 0.114 2.9 0.081 2.05 0.150 3.8 0.059 1.5 0.0394 1.0 0.037 0.95 FIGURE 1. Footprint With Copper Spreading The electrical connections for the SOT-23 are very simple. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional function of providing the thermal connection from the package to the PC board. The total cross section of a copper trace connected to the drain may be adequate to carry the current required for the application, but it may be inadequate thermally. Also, heat spreads in a circular fashion from the heat source. In this case the drain pin is the heat source when looking at heat spread on the PC board. Figure 1 shows the footprint with copper spreading for the SOT-23 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlies the drain pin and provides planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the Document Number: 70739 26-Nov-03 Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, "thermal" connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low-impedance path for heat to move away from the device. www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SI2329DS-T1-GE3