1$$119 Silicon Epitaxial Planar Diode for High Speed Switching Features * Low capacitance, (C=3.0pF max) Short reverse recovery time. (tr =3.5ns max) * Small glass package (MHD) enables easy mounting and high reliability. Outline Sip = So EE r 1 2 | Cathode band Ordering Information 1. Cathode Type No. Cathode band Package Code 2. Anode 188119 Light Blue MHD Absolute Maximum Ratings (Ta = 25C) item Symbol! Value Unit Peak reverse voltage Vam 35 Vv Reverse voltage Vr 30 Vv Peak forward current lem 450 mA Non-Repetitive peak forward surge current lesm* 1 A Average forward current lo 150 mA Power dissipation Pq 250 mW Junction temperature Jj 175 C Storage temperature T stg -65 to +175 C * Within 1s forward surge current. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit = Test Condition Forward voltage Ve _ _ 0.8 Vv Iz =10mA Reverse current ip _ ~ 0.1 pA VR =30V Capacitance Cc _ 3.0 pF Va =1V,f=1 MHz Reverse recovery time try * _ _ 3.5 ns Ir=10mA, Va=6V, Ry =50Q * Reverse recovery time test circuit Ro =509 jPulse Generator ling Sam in 50Q Oscilloscope Rin =50 Trigger 1031SS119 10 (A) 10 10 Forward current If 10 0 Capacitance C (pF) 1.0 02 04 O06 O8 1.0 Forward voltage Ve (V) Fig.1 Forward current Vs. Forward voltage 10 Reverse voltage Vp (V) Fig.3 Capacitance Vs. Reverse voltage 1.2 10 Reverse current I (A) Ta=125C Ta=75C 10 20 30 40 50 Reverse voltage Vp (V) Fig.2 Reverse current Vs. Reverse voltage 104