MBD301G - ON SEMICONDUCTOR - Datasheet.Directory

March, 2018 − Rev. 9

1Publication Order Number:

MBD301/D

MBD301G,

MMBD301LT1G,

MMBD301LT3G,

SMMBD301LT3G

Silicon Hot-Carrier Diodes

Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements. They are also available in a

Surface Mount package.

Features

•Extremely Low Minority Carrier Lifetime − 15 ps (Typ)

•Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V

•Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage VR30 V

Forward Current (DC) IF200 (Max) mA

Total Device Dissipation

@ TA = 25°C

MBD301G

MMBD301LT1G, MMBD301LT3G,

SMMBD301LT3G

Derate above 25°C

MBD301G

MMBD301LT1G, MMBD301LT3G,

SMMBD301LT3G

280

200

2.8

2.0

mW/°C

Operating Junction

Temperature Range

TJ−55 to

+125

°C

Storage Temperature Range Tstg −55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

30 VOLTS

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

SOT−23 (TO−236)

CASE 318

STYLE 8

CATHODE

ANODE

CATHODE

ANODE

TO−92 2−Lead

CASE 182

STYLE 1

SOT−23TO−92

MARKING DIAGRAMS

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

4T M G

A = Assembly Location

Y = Year

W = Work Week

4T = Device Code (SOT−23)

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

MBD

301

AYW G

SOT−23TO−92

www.onsemi.com

MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R 30 − −

Total Capacitance

(VR = 15 V, f = 1.0 MHz) Figure 1

−0.9 1.5

Reverse Leakage

(VR = 25 V) Figure 3

−13 200

nAdc

Forward Voltage

(IF = 1.0 mAdc) Figure 4

−0.38 0.45

Vdc

Forward Voltage

(IF = 10 mAdc) Figure 4

−0.52 0.6

Vdc

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION

Device Package Shipping†

MBD301G TO−92

(Pb−Free)

5,000 Units / Bulk

MMBD301LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBD301LT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

SMMBD301LT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G

www.onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Total Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Minority Carrier Lifetime

IF, FORWARD CURRENT (mA)

Figure 3. Reverse Leakage

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

, FORWARD CURRENT (mA)IF

, REVERSE LEAKAGE ( A)IRm

0.2 0.4 0.6 0.8 1.0 1.2

100

0 6.0 12 18 24

1.0

0.1

0.01

0.001

01020

500

0 3.0 6.0 9.0 12 15 21

1.6

3024 2718

1.2

0.8

0.4

f = 1.0 MHz

TA = -40°C

TA = 85°C

TA = 25°C

1.0

0.1

30 40 50 60 70 80 10090

KRAKAUER METHOD

2.8

2.4

2.0

TA = 100°C

75°C

25°C

, TOTAL CAPACITANCE (pF)CT

, MINORITY CARRIER LIFETIME (ps)t

400

300

200

100

SINUSOIDAL

GENERATOR

BALLAST

NETWORK

(PADS)

SAMPLING

OSCILLOSCOPE

(50 W INPUT)

PADS

CAPACITIVE

CONDUCTION

FORWARD

CONDUCTION

STORAGE

CONDUCTION

DUT

IF(PEAK)

IR(PEAK)

Figure 5. Krakauer Method of Measuring Lifetime

DOC. NO. 98ASB42118B

PAGE NO. 2 of 2

Electronic versions are uncontrolled except when accessed directly from WWCM.

Printed versions are uncontrolled, except when stamped "CONTROLLED COPY" in red.

ISSUE REVISION COORD/

DATE

JSH 1: DIM “F” WAS ..407-.482, .016-.019. REQ BY T. GRINTER. FB

27 JAN1998

KSH 1 : DIMENSIONS “D”, “F” WERE 0.56, 0.022. REQ BY

T. GRINTER. FB

10 FEB 1998

LDELETED DIM “F” AND REVISED NOTE 4. REQ BY T. GRINTER. FB

14 APR 1998

SOT−23 (TO−236)

CASE 318−08

ISSUE AS DATE 30 JAN 201

SCALE 4:1

XXXMG

XXX = Specific Device Code

M = Date Code

G= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

GENERIC

MARKING DIAGRAM*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

STYLE 22:

PIN 1. RETURN

2. OUTPUT

3. INPUT

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 7:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

STYLE 9:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 10:

PIN 1. DRAIN

2. SOURCE

3. GATE

STYLE 11:

PIN 1. ANODE

2. CATHODE

3. CATHODE−ANODE

STYLE 12:

PIN 1. CATHODE

2. CATHODE

3. ANODE

STYLE 13:

PIN 1. SOURCE

2. DRAIN

3. GATE

STYLE 14:

PIN 1. CATHODE

2. GATE

3. ANODE

STYLE 15:

PIN 1. GATE

2. CATHODE

3. ANODE

STYLE 16:

PIN 1. ANODE

2. CATHODE

3. CATHODE

STYLE 17:

PIN 1. NO CONNECTION

2. ANODE

3. CATHODE

STYLE 18:

PIN 1. NO CONNECTION

2. CATHODE

3. ANODE

STYLE 19:

PIN 1. CATHODE

2. ANODE

3. CATHODE−ANODE

STYLE 23:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 20:

PIN 1. CATHODE

2. ANODE

3. GATE

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

STYLE 1 THRU 5:

CANCELLED

STYLE 24:

PIN 1. GATE

2. DRAIN

3. SOURCE

STYLE 25:

PIN 1. ANODE

2. CATHODE

3. GATE

STYLE 26:

PIN 1. CATHODE

2. ANODE

3. NO CONNECTIO

STYLE 27:

PIN 1. CATHODE

2. CATHODE

3. CATHODE

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.027

c0 −−− 10 0 −−− 10

T°°°°

(Note: Microdot may be in either location)

TOP VIEW

SIDE VIEW END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

STYLE 28:

PIN 1. ANODE

2. ANODE

3. ANODE

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

http://onsemi.com

October, 2002 − Rev. 0 Case Outline Number:

XXX

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

DESCRIPTION:

98ASB42226B

ON SEMICONDUCTOR STANDARD

SOT−23 (TO−236)

Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed

versions are uncontrolled except when stamped

“CONTROLLED COPY” in red.

PAGE 1 OF 2

DOCUMENT NUMBER:

98ASB42226B

PAGE 2 OF 2

ISSUE REVISION DATE

AJ ADDED STYLE 27. REQ. BY P. LEM. 07 JUL 2004

AK OBSOLETED −09 VERSION. REQ. BY D. TRUHITTE. 14 SEP 2004

AL ADDED NOMINAL VALUES AND UPDATED GENERIC MARKING DIAGRAM. REQ.

BY HONG XIAO. 27 MAY 2005

AM REDREW LEAD SIDE VIEW. REQ BY DARRELL TRUHITTE. 26 AUG 2005

AN REINTRODUCED LABELS FOR DIMENSION C. REQ. BY D. TRUHITTE. 14 OCT 2005

AP ADDED THETA DEGREE VALUES TO DIMENSION TABLE. REQ. BY D. TRUHITTE. 17 NOV 2009

AR MODIFIED DIMENSIONS C AND L. REQ. BY M. YOU. 10 OCT 2016

AS ADDED STYLE 28. REQ. BY E. ESTILLER. 30 JAN 2018

January, 2018 − Rev. AS Case Outline Number

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