DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET * * * * * * * * * * * Mechanical Data * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) ESD Protected up to 2KV "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability * * * * Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) SOT363 D2 G1 S1 S2 G2 D1 Top View Internal Schematic Top View ESD PROTECTED TO 2kV Ordering Information (Note 3) Part Number DMN2004DWK-7 Notes: Case SOT363 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information NAB = Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) NAB YM NAB YM NEW PRODUCT Features Date Code Key Year 2006 Code T Month Code Jan 1 2007 U Feb 2 DMN2004DWK Document number: DS30935 Rev. 4 - 2 2008 V Mar 3 2009 W Apr 4 2010 X May 5 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D 1 of 5 www.diodes.com November 2011 (c) Diodes Incorporated DMN2004DWK Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Value 20 8 Units V V ID 540 390 mA IDM 1.5 A Symbol PD RJA TJ, TSTG Value 200 625 -65 to +150 Units mW C/W C TA = 25C TA = 85C Steady State Pulsed Drain Current (Note 5) Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 1 1 V A A VGS = 0V, ID = 10A VDS = 16V, VGS = 0V VGS = 4.5V, VDS = 0V VGS(th) 0.5 1.0 V RDS (ON) 0.4 0.5 0.7 0.55 0.70 0.9 |Yfs| VSD 200 0.5 1.4 ms V VDS = VGS, ID = 250A VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss 150 25 20 pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz 4. Device mounted on FR-4 PCB. 5. Pulse width 10S, Duty Cycle 1%. 6. Short duration pulse test used to minimize self-heating effect. ID, DRAIN CURRENT (A) NEW PRODUCT Drain Current (Note 4) Symbol VDSS VGSS 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN2004DWK Document number: DS30935 Rev. 4 - 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage 2 of 5 www.diodes.com November 2011 (c) Diodes Incorporated DMN2004DWK NEW PRODUCT RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 1 0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () Tch , CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage DMN2004DWK Document number: DS30935 Rev. 4 - 2 Tj, JUNCTION TEMPERATURE (C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature 3 of 5 www.diodes.com November 2011 (c) Diodes Incorporated IDR, REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) NEW PRODUCT DMN2004DWK 1000 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current Package Outline Dimensions A SOT363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0 8 All Dimensions in mm B C H K J M D DMN2004DWK Document number: DS30935 Rev. 4 - 2 F L 4 of 5 www.diodes.com November 2011 (c) Diodes Incorporated DMN2004DWK Suggested Pad Layout NEW PRODUCT C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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