DMN2004DWK-7 - DIODES Incorporated

DMN2004DWK

Document number: DS30935 Rev. 4 - 2 1 of 5

www.diodes.com November 2011

DMN2004DWK

NEW PRODUCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected up to 2KV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMN2004DWK-7 SOT363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT363

Top View Top View

Internal Schematic

NAB = Marking Code

YM = Date Code Marking

Y = Year (ex: T = 2006)

M = Month (ex: 9 = September)

ESD PROTECTED TO 2kV

NAB YM

DMN2004DWK

Document number: DS30935 Rev. 4 - 2 2 of 5

www.diodes.com November 2011

DMN2004DWK

NEW PRODUCT

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 20 V

Gate-Source Voltage VGSS ±8 V

Drain Current (Note 4) Steady

State

TA = 25°C

TA = 85°C ID 540

390 mA

Pulsed Drain Current (Note 5) IDM 1.5 A

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 4) PD 200 mW

Thermal Resistance, Junction to Ambient R

JA 625 °C/W

Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 10μA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 16V, VGS = 0V

Gate-Source Leakage IGSS ⎯ ⎯ ±1 μA VGS = ±4.5V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

)

0.5 ⎯ 1.0 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS (ON) ⎯ 0.4

0.5

0.7

0.55

0.70

0.9 Ω VGS = 4.5V, ID = 540mA

VGS = 2.5V, ID = 500mA

VGS = 1.8V, ID = 350mA

Forward Transfer Admittance |Yfs| 200 ⎯ ⎯ ms VDS =10V, ID = 0.2A

Diode Forward Voltage (Note 6) VSD 0.5 ⎯ 1.4 V

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss ⎯ ⎯ 150 pF

VDS = 16V, VGS = 0V

f = 1.0MHz

Output Capacitance Coss ⎯ ⎯ 25 pF

Reverse Transfer Capacitance Crss ⎯ ⎯ 20 pF

Notes: 4. Device mounted on FR-4 PCB.

5. Pulse width ≤10μS, Duty Cycle ≤1%.

6. Short duration pulse test used to minimize self-heating effect.

012345

V , DRAIN-SOURCE VOL TAGE (V)

Fig. 1 Typical Output Characteristics

I, D

(A)

V , GATE-SOURCE VOLT AGE (V)

Fig. 2

Reverse Drain Current vs. Source-Drain Voltage

DMN2004DWK

Document number: DS30935 Rev. 4 - 2 3 of 5

www.diodes.com November 2011

DMN2004DWK

NEW PRODUCT

T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage vs. Channel Temperature

0.1

I DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current

R , STA T IC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(on)

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

R , STA TIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(on)

I , DRAIN CURRENT (A)

Fig. 7

On-Resistance vs. Drain Current and Gate Voltage

T, JUNCTION TEMPERATURE ( C)

Fig. 8

Static Drain-Source, On-Resi stance vs. Temperature

DMN2004DWK

Document number: DS30935 Rev. 4 - 2 4 of 5

www.diodes.com November 2011

DMN2004DWK

NEW PRODUCT

I , DRAIN-SOURCE LEAKAGE CURRENT (nA)

DSS

I , REVERSE DRAIN CURRENT (A)

1000

I , DRAIN CURRENT (mA)

Fi g. 11 For w ar d Tra nsfer Adm i t tance vs . D r ain Cur r ent

|Y |, FORWARD TRANSFER ADMITTANCE (S)

V , DRAIN SOURCE VOL TAGE (V)

Fig. 12 Capacitance V ariation

Package Outline Dimensions

SOT363

Dim Min Max

A 0.10 0.30

B 1.15 1.35

C 2.00 2.20

D 0.65 Typ

F 0.40 0.45

H 1.80 2.20

J 0 0.10

K 0.90 1.00

L 0.25 0.40

M 0.10 0.22

α 0° 8°

All Dimensions in mm

B C

DMN2004DWK

Document number: DS30935 Rev. 4 - 2 5 of 5

www.diodes.com November 2011

DMN2004DWK

NEW PRODUCT

Suggested Pad Layout

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

Dimensions Value (in mm)

Z 2.5

G 1.3

X 0.42

Y 0.6

C1 1.9

C2 0.65