THYRISTOR MODULE PK(PD,PE)130FG UL;E76102 M Power Thyristor/Diode Module PK130FG series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage ratings up to 1600V are available. and electrically isolated mounting base make your mechanical design easy. 92 2 2 2 Mx1 A1K2 1 K1 G1 A2 3 2 1 K2 A1K2 PK 4-TAB K1 A2 PE NAME PLATE MAX 2 K2 3 K2 G2 K2 G2 Applications Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches K2 3 2 A1K2 1 K2 K1 G1 A2 UnitA PD Maximum Ratings Symbol 5 35 Internal Configurations K G 3500A 100A/s dv/dt 1000V/s di/dt IT(AV) 130A, IT(RMS) 205A, ITSM KG -6 Tj25 unless otherwise specified Item Ratings PK130FG40 PK130FG80 PK130FG120 PK130FG160 Unit VRRM Repetitive Peak Reverse Voltage 400 800 1200 1600 V VRSM Non-Repetitive Peak Reverse Voltage 480 960 1300 1700 V VDRM Repetitive Peak off-state Voltage 400 800 1200 1600 V Symbol ITAV Average On-state Current ITRMS R.M.S. On-state Current ITSM It 2 PGM PGAV Conditions Ratings Unit Single phase, half wave, 180conduction, Tc83 130 A Single phase, half wave, 180conduction, Tc83 205 A 3200/3500 51040 A Item Surge On-state Current 1 2 I t Value for one cycle surge current 2 Cycle, 50/60HZ, Peak Value, non-repetitive Peak Gate Power Dissipation A2S 10 W Average Gate Power Dissipation 1 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage (Forward) 10 V VRGM Peak Gate Voltage (Reverse) 5 V di/dt VISO Tj Tstg IG100mA VD12VDRM di G /dt0.1A/s 100 A/s 2500 V Operating Junction Temperature -40 to 125 Storage Temperature -40 to 125 MountingM5 Recommended Value 1.5-2.515-25 2.728 TerminalM5 Recommended Value 1.5-2.515- 25 2.728 Nm fB 170 g Ratings Unit Critical Rate of Rise of On-state Current Isolation Breakdown VoltageR.M.S. Mounting Torque Mass A.C. 1minute Typical Value Electrical Characteristics Symbol Item Conditions IDRM Repetitive Peak off-state Current,max Tj125VDVDRM 35 mA IRRM Repetitive Peak Reverse Current,max Tj125VDVDRM 35 mA VTM Gn-state Voltage,max IT390A 1.6 V IGT Gate Trigger Current,max VD6VIT1A VGT Gate Trigger Voltage,max VD6VIT1A VGD Gate Non-Trigger Voltage,min Tj125VD12VDRM Critical Rate of Rise of off-state Voltage,min Tj125VD23VDRM 1000 V/s Junction to case 0.20 /W dv/dt Rthj-cThermal Impedance,max 50 mA 3 V 0.25 V markThyristor and Diode part. No markThyristor part SanRex (R) 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com http://store.iiic.cc/ PK(PD,PE)130FG Gate Characteristics VFGM10V PG M 10 W PG AV W On-State CurrentA IFGMAV A Gate VoltageV Gate CurrentmA Per One Element HZ HZ = start Timecycles Transient Thermal Impedance j-c/W Surge On-State CurrentA 1 On-State VoltageV Surge On-State Current Rating Non-Repetitive = Maximum VGD On-State Voltage max . Transient Thermal Impedance . . . Junction to Case Per One Element . http://store.iiic.cc/ Time tsec