UNISONIC TECHNOLOGIES CO., LTD
2SD1616/A
NPN SILICON TRANSISTOR
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Copyright © 2008 Unisonic Technologies Co., Ltd QW-R201-008.D
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
* Audio frequency power amplifier
* Medium speed switching
Lead-free: 2SD1616L/2SD1616AL
Halogen-free: 2SD1616G/2SD1616AG
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen-Free Package 1 2 3 Packing
2SD1616-x-AB3-R 2SD1616L-x-AB3-R 2SD1616G-x-AB3-R SOT-89 B C E Tape Reel
2SD1616-x-G03-K 2SD1616L-x-G03-K 2SD1616G-x-G03-K SIP-3 E C B Bulk
2SD1616-x-T92-B 2SD1616L-x-T92-B 2SD1616G-x-T92-B TO-92 E C B Tape Box
2SD1616-x-T92-K 2SD1616L-x-T92-K 2SD1616G-x-T92-K TO-92 E C B Bulk
2SD1616-x-T9S-K 2SD1616L-x-T9S-K 2SD1616G-x-T9S-K TO-92SP E C B Bulk
2SD1616A-x-AB3-R 2SD1616AL-x-AB3-R 2SD1616AG-x-AB3-R SOT-89 B C E Tape Reel
2SD1616A-x-G03-K 2SD1616AL-x-G03-K 2SD1616AG-x-G03-K SIP-3 E C B Bulk
2SD1616A-x-T92-B 2SD1616AL-x-T92-B 2SD1616AG-x-T92-B TO-92 E C B Tape Box
2SD1616A-x-T92-K 2SD1616AL-x-T92-K 2SD1616AG-x-T92-K TO-92 E C B Bulk
2SD1616A-x-T9S-K 2SD1616AL-x-T9S-K 2SD1616AG-x-T9S-K TO-92SP E C B Bulk
2SD1616/A
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R201-008.D
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL RATINGS UNIT
2SD1616 60
Collector to Base Voltage 2SD1616A VCBO 120 V
2SD1616 50
Collector to Emitter Voltage 2SD1616A VCEO 60 V
Emitter to Base Voltage VEBO 6 V
DC IC 1 A
Collector Current Pulse(Note2) ICM 2 A
Total Power Dissipation PC 750 mW
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≤10ms, Duty cycle<50%
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Saturation Voltage VCE (SAT) IC=1A, IB=50mA 0.15 0.3 V
Base-Emitter Saturation Voltage VBE (SAT) IC=1A, IB=50mA 0.9 1.2 V
Base Emitter On Voltage VBE (ON) V
CE =2V, IC =50mA 600 640 700 mV
Collector Cut-Off Current ICBO V
CB=60V 100 nA
Emitter Cut-Off Current IEBO V
EB= 6V 100 nA
2SD1616 135 600
hFE1 V
CE =2V, IC =100mA 2SD1616A 135 400
DC Current Gain hFE2 V
CE =2V, IC=1A 81
Transition Freq uency fT V
CE =2V, IC =100mA 100 160 MHz
Output Capacitance Cob V
CB =10V, f =1MHz 19 pF
Turn On Time tON V
CE =10V, IC =100mA 0.07 μs
Storage Time tSTG I
B1 = -IB2 =10mA 0.95
μs
Fall Time tF V
BE(OFF) = -2 ~ -3V 0.07 μs
CLASSIFICATION OF hFE1
RANK Y G L
hFE1 135 ~ 270 200 ~ 400 300 ~ 600
2SD1616/A
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
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TYPICAL CHARACTERISTICS
Collector Output Capacitance
Collector-Base Voltage, VCB (V)
Capacitance, Cob (pF)
1000
500
300
100
50
30
10
5
3
1 3 5 10 30 50 100 300
IE=0
f=1.0MHz
Current Gain-Bandwidth Produ ct
Collector Current, IC(A)
Current Gain-Bandwidth Product, fT(MHz)
1000
500
300
100
50
30
10
5
3
10
5310.30.10.030.01
1
VCE=2V
Switching Time
Collector Current, IC(A)
0.3
0.1
1
0.50.30.10.010.003
0.01
VCC=10V
IC=10×IB1= -10×IB2
0.050.030.001
0.03
0.05
0.5
1
3
5
10
tON
tF
tSTG
2SD1616/A
NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
DC Current Gain
Collector Current, IC(A)
0.01
50
300
1000
10
10
DC Current Gain, hFE
500
100
30
5
3
10.030.050.1 0.30.5 1 3 5
VCE=2V
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Current, IC(A)
0.01
10
0.1
10
1
0.030.050.1 0.30.5 1 3 5
IC=20IB
Saturation Voltage, VCE (SAT), V BE (SAT), (V)
0.03
0.05
0.3
0.5
3
5
VCE (SAT)
VBE (SAT)
Collector Cu rrent, IC(A)
200ms
DC
2SD1616A
2SD1616
Power Dissipation, PD(W)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this docum ent does not form part of any quotation or contract, is believed to be accurate
and reliable and may b e changed without notic e.
