SBC338 Semiconductor NPN Silicon Transistor Descriptions * High current application * Switching application Features * Suitable for AF-Driver stage and low power output stages * Complementary pair with SBC328 Ordering Information Type NO. Marking SBC338 SBC338 Package Code TO-92 Outline Dimensions unit : mm 3.450.1 4.50.1 4.50.1 2.250.1 2.060.1 14.00.40 0.40.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Collector 2. Base 3. Emitter 0.38 1.200.1 1 2 3 KST-9023-000 1 SBC338 (Ta=25C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 30 V Collector-Emitter voltage VCEO 25 V Emitter-Base voltage VEBO 5 V Collector current IC 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C (Ta=25C) Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 Base-Emitter turn on voltage VBE(ON) VCE=1V, Collector-Emitter saturation voltage VCE(sat) - - V - - 1.2 V IC=500mA, IB=50mA - - 700 mV - - 100 nA 100 - 630 - VCB=5V, IC=10mA - 100 - MHz VCB=10V, IE=0, f=1MHz - 16 - pF IC=300mA ICBO VCB=30V, IE=0 DC current gain hFE* VCE=1V, IC=100mA Collector output capacitance * : hFE rank / 16(A) : 100 ~ 250, fT Cob 25(B) : 160 ~ 400, Unit 25 Collector cut-off current Transition frequency Min. Typ. Max. 40(C) : 250 ~ 630 KST-9023-000 2 SBC338 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 5 hFE - Fig. 4 VCE(sat) - IC IC KST-9023-000 3