KST-9023-000 1
SBC338
NPN Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driv er stage and low power output stages
• Complementary pair with SBC328
Ordering Information
Type NO. Marking Package Code
SBC338 SBC338 TO-92
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne cti ons
1. Collector
2. Bas e
3. Emitter
14.0±0.40
KST-9023-000 2
SBC338
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 30 V
Collector-Emitter voltage VCEO 25 V
Emitter-Base voltage VEBO 5V
Collector current IC800 mA
Collector dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector - Emitter breakdown voltage BVCEO IC=1mA, IB=0 25 - - V
Base-Emitter tu r n on voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V
Collec tor -Emitter s a turation voltage VCE(sat) IC=500mA, IB=50mA - - 700 mV
Collector cut-off current ICBO VCB=30V, IE=0 - - 100 nA
DC current gain hFE*VCE=1V, IC=100mA 100 - 630 -
Transition frequency fTVCB=5V, IC=10mA - 100 - MHz
Collec tor output capac itance Cob VCB=10V, IE=0, f=1MHz - 16 - pF
* : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
KST-9023-000 3
SBC338
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 3 IC - VCE Fig. 4 VCE(sat) - IC
Fig. 5 hFE - IC
Fig. 1 PC-Ta
