BSP41 BSP43 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 NOVEMBER 1995 COMPLEMENTARY TYPES C BSP43 - BSP33 BSP41 - BSP31 PARTMARKING DETAIL E DEVICE TYPE IN FULL C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSP41 BSP43 UNIT Collector-Base Voltage VCBO 70 90 V Collector-Emitter Voltage VCEO 60 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Base Current IB 100 mA Power Dissipation at Tamb=25C PTOT 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 C 80 V ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base BSP43 Breakdown Voltage BSP41 V(BR)CBO 90 70 MAX. V IC=100A Collector-Emitter BSP43 Breakdown Voltage BSP41 V(BR)CEO 80 60 V IC=10mA * 5 Emitter-Base Breakdown Voltage V(BR)EBO V IE=10A Collector Cut-Off Current ICBO 100 50 nA A VCB=60V VCB=60V, Tamb =125C Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V IC =150mA, IB =15mA IC =500mA, IB =50mA Base-Emitter Saturation Voltage VBE(sat) 1.0 1.2 V V IC =150mA, IB =15mA IC =500mA, IB =50mA Static Forward Current Transfer Ratio hFE Collector Capacitance Cc 12 pF VCB =10V, f=1MHz Emitter Capacitance Ce 90 pF VEB =0.5V, f=1MHz Transition Frequency fT MHz IC=50mA, VCE=10V f =35MHz Turn-On Time Ton 250 ns Turn-Off Time Toff 1000 ns VCC =20V, IC =100mA IB1 =IB2 =5mA 30 100 50 IC =100A, VCE =5V IC =100mA, VCE =5V IC =500mA, VCE =5V 300 100 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT493 datasheet. 3 - 64