ON Semiconductor NPN High Voltage Power Transistors MJD340 * DPAK For Surface Mount Applications MJD350 * PNP Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *ON Semiconductor Preferred Device * Lead Formed for Surface Mount Applications in Plastic Sleeves (No * * * * * SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix) Electrically Similar to Popular MJE340 and MJE350 300 V (Min) -- VCEO(sus) 0.5 A Rated Collector Current IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIII I III IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIII III III MAXIMUM RATINGS Symbol Value Unit VCEO 300 Vdc Collector-Base Voltage VCB 300 Vdc Emitter-Base Voltage VEB 3 Vdc Collector Current -- Continuous -- Peak IC 0.5 0.75 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 15 0.12 Watts W/C Total Power Dissipation* @ TA = 25C Derate above 25C PD 1.56 0.012 Watts W/C TJ, Tstg -65 to +150 C Collector-Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RJC 8.33 C/W Thermal Resistance, Junction to Ambient* RJA 80 C/W Lead Temperature for Soldering Purpose TL 260 C CASE 369A-13 CASE 369-07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.190 4.826 Rating Characteristic Symbol Min Max Unit VCEO(sus) 300 -- Vdc Collector Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO -- 0.1 mAdc Emitter Cutoff Current (VBE = 3 Vdc, IC = 0) IEBO -- 0.1 mAdc hFE 30 240 -- 0.165 4.191 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) 0.118 3.0 0.063 1.6 Collector-Emitter Sustaining Voltage (1) (IC = 1 mAdc, IB = 0) 0.07 1.8 OFF CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) *When surface mounted on minimum pad sizes recommended. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 0.243 6.172 ON CHARACTERISTICS (1) inches mm Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 2 1 Publication Order Number: MJD340/D MJD340 MJD350 TYPICAL CHARACTERISTICS MJD340 300 VCE = 2 V VCE = 10 V TJ = 150C 100 70 +100C 50 +25C 30 20 10 -55C 1 2 3 5 7 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) 70 100 Figure 1. DC Current Gain MJD340 1 TJ = 25C V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 200 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 VCE(sat) @ IC/IB = 10 0.2 IC/IB = 5 0 10 20 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 2. "On" Voltages http://onsemi.com 2 500 200 300 500 MJD340 MJD350 MJD350 200 TJ = 150C 1 TJ = 25C 0.8 V, VOLTAGE (VOLTS) 25C 100 hFE , DC CURRENT GAIN MJD350 1 70 -55C 50 30 20 10 VCE = 2 V VCC = 10 V 5 7 10 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 IC/IB = 10 0.2 VCE(sat) 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 0 500 5 7 10 Figure 3. DC Current Gain r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.03 0.02 0.01 0.01 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 Figure 4. "On" Voltages D = 0.5 0.2 0.1 0.07 0.05 IC/IB = 5 RJC(t) = r(t) RJC RJC = 8.33C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.05 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 5. Thermal Response http://onsemi.com 3 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k MJD340 MJD350 1000 IC, COLLECTOR CURRENT (mA) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 500 300 200 500 s 1 ms 100 50 30 20 dc 10 5 3 2 10 20 30 50 70 100 200 300 500 700 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Active Region Safe Operating Area TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 1 2 20 1.5 15 TA (SURFACE MOUNT) TC 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (C) Figure 7. Power Derating http://onsemi.com 4 125 150 MJD340 MJD350 PACKAGE DIMENSIONS DPAK CASE 369A-13 ISSUE AA -T- C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M T http://onsemi.com 5 DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 --- MJD340 MJD350 PACKAGE DIMENSIONS DPAK CASE 369-07 ISSUE M C B V E R 4 A 1 2 3 S -T- SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M T http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 MJD340 MJD350 Notes http://onsemi.com 7 MJD340 MJD350 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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