High Voltage Power Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
•Lead Formed for Surface Mount Applications in Plastic Sleeves (No
Suffix)
•Straight Lead Version in Plastic Sleeves (“–1” Suffix)
•Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
•Electrically Similar to Popular MJE340 and MJE350
•300 V (Min) — VCEO(sus)
•0.5 A Rated Collector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
300
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
300
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
3
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
— Peak
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IC
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
0.5
0.75
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
15
0.12
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation* @ TA = 25C
Derate above 25C
ÎÎÎÎ
ÎÎÎÎ
PD
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.56
0.012
ÎÎÎ
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎ
ÎÎÎÎ
RθJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
8.33
ÎÎÎ
ÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient*
ÎÎÎÎ
ÎÎÎÎ
RθJA
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
80
ÎÎÎ
ÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Lead Temperature for Soldering Purpose
ÎÎÎÎ
ÎÎÎÎ
TL
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
260
ÎÎÎ
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1)
(IC = 1 mAdc, IB = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
300
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCB = 300 Vdc, IE =
0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
0.1
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 3 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
0.1
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
ÎÎÎÎ
ÎÎÎÎ
hFE
ÎÎÎÎ
ÎÎÎÎ
30
ÎÎÎ
ÎÎÎ
240
ÎÎÎ
ÎÎÎ
—
*When surface mounted on minimum pad sizes recommended.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 2 1Publication Order Number:
MJD340/D
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS
15 WATTS
*ON Semiconductor Preferred Device
MJD340
MJD350
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.243
6.172
0.063
1.6
0.118
3.0
0.07
1.8 0.165
4.191
0.190
4.826
inches
mm
*
NPN
PNP *
CASE 369A–13
CASE 369–07
MJD340 MJD350
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2
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
300
10 1
100
50
3 20 30 50 70 100 200 300 500
200
70
30
20
25107
hFE, DC CURRENT GAIN
TJ = 150°C
+25°C
VCE = 2 V
VCE = 10 V
-55°C
+100°C
TYPICAL CHARACTERISTICS
MJD340
V, VOLTAGE (VOLTS)
1
10
Figure 2. “On” Voltages
IC, COLLECTOR CURRENT (mA)
020 30 50 100 200 500
0.4
0.8
0.6
0.2
300
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
IC/IB = 5
MJD340
MJD340 MJD350
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3
1
5
07 10 20 30 100 200
0.8
0.6
50 70 300 500
0.4
0.2
1
200
5
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
10
7 10 20 30 100 200
Figure 4. “On” Voltages
IC, COLLECTOR CURRENT (mA)
100
70
V, VOLTAGE (VOLTS)
20
50 70
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
TJ = 150°C
25°C
VCE = 2 V
VCC = 10 V
-55°C
300 500
hFE, DC CURRENT GAIN
50
30 IC/IB = 10
IC/IB = 5
VCE(sat)
MJD350 MJD350
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL
0.05 1 2 5 10 20 50 100 200 1 k500
RθJC(t) = r(t) RθJC
RθJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.1 0.50.2
Figure 5. Thermal Response
RESISTANCE (NORMALIZED)
0.03 0.3 3 30 300
0.01
MJD340 MJD350
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4
IC, COLLECTOR CURRENT (mA)
1000
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
120 30 50 70 100
200
500
300 500 µs
Figure 6. Active Region Safe Operating Area
200 300 500 700 100
0
100
20
50
30
10
2
5
3
1 ms
dc
100 µsThere are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. TJ(pk) may be calculated from the data in
Figure 5. A t high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 7. Power Derating
25
25
T, TEMPERATURE (°C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
TATC
TC
TA (SURFACE MOUNT)
MJD340 MJD350
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5
PACKAGE DIMENSIONS
CASE 369A–13
ISSUE AA
DPAK
D
A
K
B
R
V
S
FL
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
–T– SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.250 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.033 0.040 0.84 1.01
F0.037 0.047 0.94 1.19
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.175 0.215 4.45 5.46
S0.020 0.050 0.51 1.27
U0.020 --- 0.51 ---
V0.030 0.050 0.77 1.27
Z0.138 --- 3.51 ---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
MJD340 MJD350
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6
PACKAGE DIMENSIONS
CASE 369–07
ISSUE M
DPAK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
V
S
A
K
–T–
SEATING
PLANE
R
B
F
GD3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.250 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.033 0.040 0.84 1.01
F0.037 0.047 0.94 1.19
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.175 0.215 4.45 5.46
S0.050 0.090 1.27 2.28
V0.030 0.050 0.77 1.27
MJD340 MJD350
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7
Notes
MJD340 MJD350
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8
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