BY229-200 thru BY229-800 BY229X-200 thru BY229X-800 BY229B-200 thru BY229B-800 Vishay Semiconductors Fast Switching Plastic Rectifier Major Ratings and Characteristics IF(AV) 8.0 A VRRM 200 V to 800 V IFSM 100 A trr 145 ns VF 1.85 V Tj max 150 C ITO-220AC TO-220AC 2 2 1 1 BY229 Series BY229X Series PIN 1 Features * * * * * PIN 2 PIN 1 CASE PIN 2 TO-263AB Glass passivated chip junction Superfast recovery time for high efficiency Low leakage current High forward surge capability Meets MSL level 1, per J-STD-020C K 2 1 BY229B Series PIN 1 K PIN 2 HEATSINK Typical Applications Mechanical Data For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes application Case: TO-220AC, ITO-220AC, TO-263AB Epoxy meets UL 94V-0 Flammability rating Terminals: Matte tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: As marked Mounting Torque: 10 in-lbs maximum Maximum Ratings (TC = 25 C, unless otherwise noted) Parameter Symbol BY229- BY229- BY229- BY229200 400 600 800 Unit Maximum recurrent peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V Maximum DC blocking voltage VDC 200 400 600 800 V Maximum average forward rectified current at TC= 100 C IF(AV) 8.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Maximum slope of reverse recovery current IF = 2.0 A, VR = 30 V, di/dt = 20 s dir/dt 60 A/s TJ, TSTG - 40 to + 150 C VISOL 4500 (1) V Operating junction and storage temperature range RMS Isolation voltage from terminals to heatsink with t = 1 second, RH 30 % (BY229X only) 3500 (2) 1500 (3) Document Number 88540 09-Mar-05 www.vishay.com 1 BY229-200 thru BY229-800 BY229X-200 thru BY229X-800 BY229B-200 thru BY229B-800 Vishay Semiconductors Electrical Characteristics (TC = 25 C unless otherwise noted) Parameter Test condition Maximum instantaneous forward voltage Symbol BY229- BY229- BY229- BY229200 400 600 800 Unit VF 1.85 V IR 10 300 A at 20 A(4) TJ = 25 C TJ = 125 C Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time at IF = 1.0 A, VR = 30 V, di/dt = 50 A/s, Irr = 10 % IRM trr 145 ns Maximum recovered stored charge IF = 2.0 A, VR = 30 V, di/dt = 20 A/s Qrr 700 nC Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19") (4) Pulse test: 300 s pulse width, 1 % duty cycle Thermal Characteristics (TC = 25 C unless otherwise noted) Symbol BY229 BY229X BY229B Unit Typical thermal resistance, junction to case Parameter RJC 2.0 4.8 2.0 C/W Typical thermal resistance, junction to air RJA 20 - 20 C/W www.vishay.com 2 Document Number 88540 09-Mar-05 BY229-200 thru BY229-800 BY229X-200 thru BY229X-800 BY229B-200 thru BY229B-800 Vishay Semiconductors Ratings and Characteristics Curves (TA = 25 C unless otherwise noted) 1000 Resistive or Inductive Load IR - Instantaneous Re verse Leakage Current (A) Average Forward Rectified Current (A) 12 10 8.0 6.0 4.0 2.0 0 125 C 1 25 C 0.1 0.01 0 25 50 75 100 125 0 150 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics 100 150 TL = 75 C 8.3ms Single Half Sine-Wave 125 TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p pF - J unction Capacitance Peak Forward Surge Current (A) 100 C 10 Case Ambient Temperature (C) 100 75 50 25 10 0 10 1 100 1 10 100 Reverse Voltage (V) Number of Cycles at 60 HZ Figure 2. Maximum Non-Repetitive Peak Forward Surge Current IF - Instantaneous F orward Current (A) TJ = 150 C 100 Figure 5. Typical Junction Capacitance 100 TJ = 150 C TJ = 25 C 10 TJ = 100 C 1 TJ = 125 C Pulse Width = 300s 1% Duty Cycle 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Document Number 88540 09-Mar-05 www.vishay.com 3 BY229-200 thru BY229-800 BY229X-200 thru BY229X-800 BY229B-200 thru BY229B-800 Vishay Semiconductors Package outline dimensions in inches (millimeters) TO-220AC ITO-220AC 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.405 (10.27) 0.383 (9.72) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.140 (3.56) DIA. 0.130 (3.30) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) 1 PIN 2 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 1 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) PIN 1 PIN 2 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) PIN 2 0.105 (2.67) 0.095 (2.41) 0.676 (17.2) 0.646 (16.4) 0.600 (15.5) 0.580 (14.5) 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 0.635 (16.13) 0.625 (15.87) 0.131 (3.39) DIA. 0.122 (3.08) 0.057 (1.45) 0.110 (2.80) 0.100 (2.54) 0.045(1.14) PIN 1 CASE PIN 2 0.027 (0.68) 0.022 (0.56) 0.205 (5.20) 0.195 (4.95) 0.014 (0.36) K-HEATSINK 0.037 (0.94) 0.027 (0.69) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.022 (0.55) 0.014 (0.36) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.205 (5.20) 0.195 (4.95) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) PIN 1 PIN 2 0.42 MIN. (10.66) 0.055 (1.40) 0.047 (1.19) 0.624 (15.85) 0.591(15.00) 0-0.01 (0-0.254) 0.037 (0.940) 0.027 (0.686) Mounting Pad Layout K-HEATSINK 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) 0.095 (2.41) Document Number 88540 09-Mar-05