lk SGS-THOMSON MICROELECTRONICS IRF640/FI IRF641/Fl N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss Roscon} Ib IRF640 200 V 0.18 2 18 A IRF640FI 200 V 0.180 10A IRF641 150V. | 0.182 18 A IRF641Fl 150 V 0.18 2 10A a AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED a REPETITIVE AVALANCHE DATA AT 100C ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 2000V DC APPLICATIONS a HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) MOTOR CONTROL, AUDIO AMPLIFIERS INDUSTRIAL ACTUATORS DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS L TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM D (2) [symbol Parameter Value Unit IRF 640 641 640FI | 641FI | Vos |[Drain-source Voltage (Vas = 0) 200 150 200 150 Vv Vocr | Drain- gate Voltage (Res = 20 kQ) 200 150 200 150 Vv Ves |Gate-source Voltage +20 vi | lo [Drain Current (cont.) at Te = 25 C 18 1a | 10 10 A Ip Drain Current (cont.) at T; = 100 C m| 11 6 6 A Ipu(e) |Drain Current (pulsed) _ 72 72 72 72 A Prot | Total Dissipation at Tc = 25 C 125 40 W Derating Factor 1 0.32 wc Tstg |Storage Temperature -65 to 150 C T; | |Max. Operating Junction Temperature 150 C | (e) Pulse width limited by safe operating area March 1992 1/7 199IRF 640/FI - 641/Fl THERMAL DATA [ To-220 | ISOWATT220 Rinj-case | Thermal Resistance Junction-case Max 1 3.12 C/W Rinj-amp |Therma!l Resistance Junction-ambient Max 62.5 C/W Rinc-s Thermal Resistance Case-sink Typ 0.5 C/W Ty (Maximum Lead Temperature For Soldering Purpose 300 c AVALANCHE CHARACTERISTICS | Symbol - Parameter Max Value Unit ! lar Avalanche Current, Repetitive or Not-Repetitive 18 A (pulse width limited by Tj max, 8 < 1%) Eas Single Pulse Avalanche Energy 50 mJ (starting Tj = 25 C, Ip = lan, Vop = 25 V) Ear Repetitive Avalanche Energy 10 mJ (pulse width limited by Tj max, 5 < 1%) lar Avalanche Current, Repetitive or Not-Repetitive 11 A (Tc = 100 C, pulse width limited by T; max, 5 < 1%) | ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol 7 Parameter Test Conditions | Min. | Typ. | Max. | Unit Visryoss |Drain-source Ip = 250 pA Ves = 0 Breakdown Voltage for IRF640/640FI 200 Vv for IRF641/641Ft 150 Vv loss Zero Gate Voitage Vos = Max Rating 250 HA Drain Current (Ves = 0) Vos = Max Rating x 0.8 Te = 125 C 1000 HA Jass Gate-body Leakage Vas=+20V +100 nA _ Current (Vps = 0) i _ ON (*) Symbol | Parameter Test Conditions Min. | Typ. | Max. | Unit Vash) Gate Threshold Voltage |Vos = Ves Ip = 250 pA 2 4 Vv Rosion) |Static Drain-source On |Ves=10V Ip=10A 0.18 Q |Resistance 7 ID(on) On State Drain Current |Vos > Ib(on) x Rostonjmax Vas = 10 V 18 A DYNAMIC Symbol : Parameter Test Conditions Min. | Typ. | Max. | Unit Ots (*) Forward Vos > Ippon) x Ros(onymax IDpb=10A 6.7 S Transconductance a Ciss Input Capacitance Vos=25V f=1MHz Vas=0 2300 pF Coss Output Capacitance 400 pF Crss Reverse Transfer 150 pF Capacitance 2/7 200 on ky SGS-THOMSON MICROELECTROMICSIRF 640/Fl - 641/F 1 ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit taton) Turn-on Time Von =100V Ip =18A 50 65 ns tr Rise Time Rg = 9.1 2 Ves =10V 90 120 ns tarot) Turn-off Delay Time (see test circuit) 85 410 ns tt Fall Time 60 80 ns Qg Total Gate Charge Ip=18A Ves =10V 65 85 nc | Vpp = Max Rating x 0.8 | (see test circuit) SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. | Typ. Max. Unit Isp Source- drain Current 18 A Isom(e) |Source-drain Current 72 A (pulsed) | Vsp (*) |Forward On Voltage Isp =18A Voes=0 1.5 Vv ter Reverse Recovery Isp = 18 A di/dt = 100 A/us 260 ns Time Va =100V T)= 150C Qrr Reverse Recovery 2 pC Charge (+) Pulsed: Pulse duration = 300 1s, duty eet i 5% (#} Pulse width limited by safe operating area Sate Operating Area for TO-220 Package Safe Operating Area for ISOWATT220 Package Ip{A) 2 0.C. OPERATION 0 0.C. OPERATION IRF641F IRF 640 IRFB4IFI 10 10! 104 Vos () a ir SGS-THOMSON .--.- =. - MICROELECTRONICSIRF 640/Fl - 641/FI Thermal Impedance for TO-220 Package 107! Zin = k Rinse 6=+)./t vu JUL SINGLE PULSE gk 10 10F 1074 1078107? 107! ty (s) Derating Curve for TO-220 Package Pia (W) 120 50 40 0 50 100 Tease (C) Output Characteristics Ip (A) 24 18 12 6 SV v 0 1 2 3 4 Vos (V) 4/7 202 SCS-THOMSON MICROELECTRONICS ky Thermal Impedance for ISOWATT220 Package 0.05 0.02 0.01 SINGLE PULSE pl ; 10% 10 107 10 or! 10 t (s) Derating Curve for ISOWATT220 Package Pros (W) 40 30 20 0 40 80 120 Tose (C) Output Characteristics In (A) WN v,5=t0v BV 24 av 0 20 40 60 BO Vos ()IRF 640/FI - 641/F' Transfer Characteristics Ip (A) T)=150C to Vos >! acon) XR ns(on)mox 107! 9 2 4 6 B Vos(V) Static Drain-source On Resistance Rosvon (9) 0.3 0.25 0.2 0.15 0.05 0 4 B 12. 16 20 1,{A) Gate Charge vs Gate-source Voltage Vos (V) Vos=160V 9 20 40 60 0,(nC) kyr Transconductance O1(S) Vos >!acon) Rpsor}nox 20 Ty=-55C 0 5 10 15 20 InfA) Maximum Drain Current vs Temperature Ip (A) 20 16 0 25 50 75 100 Tc (C) Capacitance Variations C{pF) 3500 3000 2500 2000 1500 1000 500 0 25 50 75 Vos () 5/7 SGS-THOMSON DMICROELECTROMICS 203 Seer eee eeeIRF 640/Fl - 641/FI Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature GC193500 Ros(on) Vyar)oss (norm) (norm) 1.2 2.0 0g 0.5 0.8 oO -50 0 50 100 T, (C) -50 Q 50 100 T, (C) Source-drain Diode Forward Characteristics Ign (A) io! 10 0 0.5 1 1.5 2 Vey () Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms 1 [ | i i | y (BR)OSS ; | | | I Yoo | | bo S5c059a0 $C05970 : ; . it _ . 6/7 ky SGS-THOMSON TF ivienomecrnomes 204IRF 640/FI - 641/Fl Switching Time Test Circuit Gate Charge Test Circuit Voo | _ xa | | Ry 2200 | 3.3 HF HE Voo co __ Ig=C The Yo o __ _ V;=20V=Vouay |S CONST 100A t Devt GS 4 eel, 26 4 ~ DUT. | ve t = we | oe | $c05990 aa Pw scotcea V7 ce _. - ky SGS-THOMSON MICROELECTRONICS 205