Rev. A/AH
2008
05
06
MMBT3906
SMD General Purpose Transistor (PNP)
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of 4
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
MMBT3906
Symbol Description Min. Max. Unit Conditions
60 - -VCE=1V, -IC=0.1mA
80 - -VCE=1V, -IC=1mA
100 300 -VCE=1V, -IC=10mA
60 - -VCE=1V, -IC=50mA
hFE* D.C. Current Gain
30 -
-VCE=1V, -IC=100mA
-V(BR)CBO Collector-Base Breakdown Voltage 40 V -IC=10µA, IE=0
-V(BR)CEO* Collector-Emitter Breakdown Voltage 40 - V -IC=1mA, IB=0
-V(BR)EBO* Emitter-Base Breakdown Voltage 5.0 - V -IE=10µA, IC=0
- 0.25 -IC=10mA, -IB=1mA
-VCE(sat)* Collector-Emitter Saturation Voltage - 0.4
V -IC=50mA, -IB=5mA
0.65 0.85 -IC=10mA, -IB=1mA
-VBE(sat)* Base-Emitter Saturation Voltage
- 0.95
V -IC=50mA, -IB=5mA
-ICEV Collector-Emitter Cut-off Current - 50 nA -VEB=3V, -VCE=30V
-IEBV Emitter-Base Cut-off Current - 50 nA -VEB=3V, -VCE=30V
fT Current Gain-Bandwidth Product 250 - MHz -VCE=20V, -IC=10mA,
f=100MHz
CCBO Collector-Base Capacitance - 4.5 pF -VCB=5V, IE=0,
f=100KHz
CEBO Emitter-Base Capacitance - 10 pF -VEB=0.5V, IC=0
f=100KHz
NF Noise Figure - 4.0 dB -VCE=5V, -IC=100µA,
RG=1KΩ,
f=10Hz to 15.7kHz
hfe Small Signal Current Gain 100 400 -VCE=10V, -IC=1mA
f=1KHz
td Delay Time (see Fig 1) - 35 -IB1=1mA, -IC=10mA
tr Rise Time (see Fig 1) - 35 -IB1=1mA, -IC=10mA
ts Storage Time (see Fig 2) - 225 IB1=-IB2=1mA, -IC=10mA
tf Fall Time (see Fig 2) - 75
nS
IB1=-IB2=1mA, -IC=10mA
Note: *Pulse Test: Pulse Width≤ 300µs, Duty Cycle ≤2.0%