MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM
66100 MICROCOUPLER, STANDARD TRANSISTOR OUTPUT
OPTOELECTRONIC PRODUCTS
DIVISION
08/24/2011
Features:
Radiation tolerant version available
Small size saves real estate
Large thick film gold bond pads
Element evaluation on request
Electrically similar to 4N2X and 4N4X couplers
Applications:
Eliminate ground loops
Level shifting
Line receiver
Solid state switching
Switching pow er supplies
DESCRIPTION
The 66100 microcoupler is a single channel optocoupler consisting of an LED optically coupled to a light sensitive silicon
phototransistor. Each microcoupler is provided with full 100% DC testing with sample element evaluation available. All
microcouplers are capable of operating over the full military temperature range (-55°C to +125°C).
ABSOLUTE MAXIMUM RATINGS
Input to Output Isolation Voltage ........................................................................................................................................... 1 kV
Input Diode Continuous Forward Current ........................................................................................................................ 40 mA
Peak Forward Input Current (value applies for tw 10s, PRR < 300 pps) ........................................................................... 1 A
Reverse Input Voltage ............................................................................................................................................................ 6 V
Input Power Dissipation (Note 1) .…………………………………..…………………………………………………………. 80 mW
Emitter-Base Voltage ............................................................................................................................................................... 7 V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited and the input diode equal to zero) .................... 60 V
Collector-Base Voltage .......................................................................................................................................................... 60 V
Continuous Collector Current ............................................................................................................................................. 50 mA
Continuous Transistor Power Dissipation (Note 2) ………………………………………………………………………….300 mW
Storage Temperature ......................................................................................................................................... -65°C to +150°C
Operating Free-Air Temperature Range ............................................................................................................ -55°C to +125°C
Notes:
1. Derate linearly at the rate of 1.33 mW/°C above 65°C.
2. Derate linearly at the rate of 3 mW/°C above 25C.
Package Dimensions Schematic Diagram
ANODE 1 2 EMITTER
CATHODE 6 5 BASE
3 COLLECTOR
0.100
0.110
0.050 0.030
0.092
0.055
MAX.
1
6
3
4
5
20.015
DEVICE TYPE
IDENTIFIER DOT (COLOR CODE - BROWN)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM
66100 MICROCOUPLER, STANDARD TRANSISTOR OUTPUT
08/24/2011
ELECTRICAL CHARACTERISTICS
T
A
= 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Input Diode Static Rev erse Current IR 10 µA VR = 2 V
Input Diode Static Forward V oltage -55°C VF 1.0 2.0 V IF = 10 mA
Input Diode Static Forward V oltage +25°C VF 0.8 1.4 1.5 V IF = 10 mA
Input Diode Static Forward V oltage +100°C VF 0.8 2.0 V IF = 10 mA
OUTPUT TRANSISTOR
T
A
= 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Collector-Base Breakdown Voltage V
(
BR
)
CBO 45 V IC = 100 A, IB = 0, IF = 0
Collector-Emitter Breakdown Voltage V
(
BR
)
CEO 40 V IC = 1 mA, IB = 0, IF = 0
Emitter-Base Breakdown Voltage V
(
BR
)
EBO 7 V IC = 0 mA, IE = 100 A, IF = 0
Off-State Collector Current
+100°C ICEO
100
100 nA
A VCE = 20 V, IF = 0 mA, IB = 0
COUPLED CHARACTERISTICS
T
A
= 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
On State Collector Current IC(ON) 2.0 mA VCE = 5 V, IF = 1 mA, IB = 0
On State Collector Current +100C IC(ON) 2.0 mA VCE = 5 V, IF = 2 mA, IB = 0
On State Collector Current -55C IC
(
ON
)
2.8 mA VCE = 5 V, IF = 2 mA, IB = 0
Collector-Emitter Saturation Voltage VCE(SAT) 0.3 V IF = 2 mA, IC = 2 mA
Input to Output Isolation Voltage VI-O 1000 V I
I-O = 100 nA 1
Rise Time-Phototransistor Operation tr 10 25 s VCC = 10 V, IF = 10 mA,
RL = 100 , IB = 0 2
Fall Time-Phototransistor Operation tf 10 25 s VCC = 10 V, IF = 10 mA,
RL = 100 , IB = 0 2
NOTES:
1. These parameters are measured between all phototransistor leads shorted together and wi th both input diode leads shorted together.
2. This parameter must be measured using pulse techniques (tW = 100 s duty cy cle 1%).
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL MIN MAX UNITS
Input Current, Low Level IFL 0 90 A
Input Current, High Level IFH 2 10 mA
Supply Voltage VCE 5 10 V
Operating Temperature TA -55 125 C
SELECTION GUIDE
PA RT NUMBER PA RT DESCRIPT ION
66100-001 Commercial
66100-101 Commercial with element evaluation
66100-002 Radiation tolerant
66100-102 Radiation tolerant with element ev aluation
