FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
©2011 Semiconductor Components Industries, LLC.
August-2017,Rev 3
Publication Order Number:
FDMQ8203/D
MLP 4.5x5
Top Bottom
10
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3
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2
1
Q1 (Nch)Q4 (Nch)
Q3 (Pch) Q2 (Pch)
D1, D2 to backside
D3, D4 to backside
(isolated from D1,D2)
G1
S1
S1
G2
S2
S2
G4
S4
S4
G3
S3
S3
S2
S1
G2
S2
S1
G1
S3
S4
G3
S3
S4
G4 Pin 1
D3/
D4
D3/
D4
D1/
D2
D1/
D2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Q1/Q4 Q2/Q3 Units
VDS Drain to Source Voltage 100 -80 V
VGS Gate to Source Voltage ±20 ±20 V
ID
Drain Current -Continuous (Package limited) TC = 25 °C 6 -6
A
-Continuous (Silicon limited) TC = 25 °C 10 -10
-Continuous TA = 25 °C (Note 1a) 3.4 -2.6
-Pulsed 12 -10
PDPower Dissipation for Single Operation TC = 25 °C 22 37 W
Power Dissipation for Dual Operation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 160
Device Marking Device Package Reel Size Tape Width Quantity
FDMQ8203 FDMQ8203 MLP4.5x5 13 ” 12 mm 3000 units
FDMQ8203
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers
Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
Features
Q1/Q4: N-Channel
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
Q2/Q3: P-Channel
Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A
Substantial efficiency benefit in PD solutions
RoHS Compliant
General Description
This quad mosfet solution provides ten-fold improvement in
power dissipation over diode bridge.
Application
High-Efficiency Bridge Rectifiers
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
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2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristic s
On Characteristics
Dynamic Characteristics
Switching Characteristics
Symbol Parameter Test Conditions Type Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V
ID = -250 μA, VGS = 0 V Q1/Q4
Q2/Q3 100
-80 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, referenced to 25 °C
ID = -250 μA, referenced to 25 °C Q1/Q4
Q2/Q3 72
-79 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V
VDS = -64 V, VGS = 0 V Q1/Q4
Q2/Q3 1
-1 μA
μA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V Q1/Q4
Q2/Q3 ±100
±100 nA
nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA
VGS = VDS, ID = -250 μAQ1/Q4
Q2/Q3 2
-1 3
-1.6 4
-3 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C
ID = -250 μA, referenced to 25 °C Q1/Q4
Q2/Q3 -8
5 mV/°C
rDS(on) Drain to Source On Resistance
VGS = 10 V, ID = 3 A
VGS = 6 V, ID = 2.4 A
VGS = 10 V, ID = 3 A , TJ = 125 °C Q1/Q4 85
118
147
110
175
191 mΩ
VGS = -10 V, ID = -2.3 A
VGS = -4.5 V, ID = -2.1 A
VGS = -10 V, ID = -2.3 A, TJ = 125 °C Q2/Q3 161
188
273
190
235
323
gFS Forward Transconductance VDS = 10 V, ID = 3 A
VDS = -10 V, ID = -2.3 A Q1/Q4
Q2/Q3 6
6S
Ciss Input Capacitance Q1/Q4:
VDS = 50 V, VGS = 0 V, f = 1 MHZ
Q2/Q3:
VDS = -40 V, VGS = 0 V, f = 1 MHZ
Q1/Q4
Q2/Q3 158
639 210
850 pF
Coss Output Capacitance Q1/Q4
Q2/Q3 41
46 55
65 pF
Crss Reverse Transfer Capacitance Q1/Q4
Q2/Q3 2.6
24 5
40 pF
td(on) Turn-On Delay Time Q1/Q4:
VDD = 50 V, ID = 3 A,
VGS = 10 V, RGEN = 6 Ω
Q2/Q3:
VDD = -40 V, ID = -2.3 A,
VGS = -10 V, RGEN = 6 Ω
Q1/Q4
Q2/Q3 3.8
4.7 10
10 ns
trRise Ti me Q1/Q4
Q2/Q3 1.3
2.8 10
10 ns
td(off) Turn-Off Delay Time Q1/Q4
Q2/Q3 7.5
22 15
35 ns
tfFall Time Q1/Q4
Q2/Q3 1.9
2.7 10
10 ns
QgTotal Gate Charge VGS = 0 V to 10 V
VGS = 0 V to -10 V Q1/Q4:
VDD = 50 V,
ID = 3 A
Q2/Q3:
VDD = -40 V,
ID = -2.3A
Q1/Q4
Q2/Q3 2.9
13 5
19 nC
QgTotal Gate Charge VGS = 0 V to 5 V
VGS = 0 V to -4.5 V Q1/Q4
Q2/Q3 1.6
6.4 3
10 nC
Qgs Gate to Source Gate Charge Q1/Q4
Q2/Q3 0.8
1.6 nC
Qgd Gate to Drain “Miller” Charge Q1/Q4
Q2/Q3 0.8
2.6 nC
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
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3
Electrical Characteristics TJ = 25 °C unless otherwise noted
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Type Min Typ Max Units
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 3 A (Note 2)
VGS = 0 V, IS = -2.3 A (Note 2) Q1/Q4
Q2/Q3 0.86
-0.82 1.3
-1.3 V
trr Reverse Recovery Time Q1/Q4:
IF = 3 A, di/dt = 100 A/μs
Q2/Q3:
IF = -2.3 A, di/dt = 100 A/μs
Q1/Q4
Q2/Q3 32
26 52
42 ns
Qrr Reverse Recovery Charge Q1/Q4
Q2/Q3 21
26 34
42 nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
50 °C/W when mounted on a 1 i n2
pad of 2 oz copper, the board
designed Q1+Q3 or Q2+Q4.
160 °C/W when mounted on a
minimum pad of 2 oz copper, the
board designed Q1+Q 3 or Q2+Q4.
a. b.
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
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4
Typical Characteristics (N-Channel) TJ = 25 °C unless otherwise noted
Figure 1.
012345
0
3
6
9
12
VGS = 7 V
VGS = 10 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 5 V
VGS = 6 V
VGS = 8 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MA X
On Region Characteristics Figure 2.
036912
0
1
2
3
4
5
VGS = 8 V VGS = 10 V
VGS = 7 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRA IN CURRENT (A)
VGS = 6 V
VGS = 5 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 3 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPER ATURE (oC)
vs Junction Te mperature Figure 4.
45678910
0
100
200
300
400
TJ = 125 oC
ID = 3 A
TJ = 25 oC
VGS, GA TE TO SO U RCE VOLTAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTAN CE (mΩ)
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MA X
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
234567
0
3
6
9
12
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SO UR C E V OLTAGE (V)
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
20
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
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Figure 7.
0 0.5 1.0 1.5 2.0 2.5 3.0
0
2
4
6
8
10
ID = 3 A
VDD = 75 V
VDD = 25 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 50 V
Gate Charge Characteristics Figure 8.
0.1 1 10 100
1
10
100
1000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9. Forward Bias Safe Operating Area
0.1 1 10 100 300
0.005
0.01
0.1
1
10
20
10 s
10 ms
DC
1 s
100 m s
1 ms
ID, DRAIN CURREN T (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THI S AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 160 oC/W
TA = 25 oC
Figure 10.
Typical Characteristics (N-Channel) TJ = 25 °C unless otherwise noted
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
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6
Typical Characteristics (P-Channel) TJ = 25 oC unlenss otherwise noted
012345
0
2
4
6
8
10
VGS = - 2 .5 V
VGS = -3 V
VGS = -4 .5 V
VGS = -10 V
VGS = -3 .5 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTA G E (V)
Figure 10. On-Region Characteristics
0246810
0
1
2
3
4
VGS = -2.5 V
VGS = - 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -3.5 V
VGS = -10 V
VGS = -3 V
Figure 11. Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 12. Normalized On-Resistance
vs Junction Temperature
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = - 2.3 A
VGS = - 10 V
NORMALIZED
DRAIN TO SO UR CE ON-RESISTANCE
TJ, JUNCTION TEMPER ATURE (oC)
246810
0
100
200
300
400
500
600
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
TJ = 25 oC
ID = -2.3 A
rDS(on), DRAIN TO
SOURCE ON-RESISTAN CE (mΩ)
-VGS, G ATE TO S OURCE VOLTAGE (V)
Figure 13. On-Resistance vs Gate to
Source Voltage
Figure 14. Transfer Ch aracteristics
12345
0
2
4
6
8
10
TJ = 25 oC
VDS = -5 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 150 oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE V OLTAGE (V)
Figure 15. Source to Drain Diode
Forward Voltage vs Source Current
0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
-IS, REVERSE DRAIN CU RR ENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics (P-Channel) TJ = 25 oC unlenss otherwise noted
Figure 16. Gate Charge Characteristics
02468101214
0
2
4
6
8
10
ID = -2.3 A
VDD = -12 V
VDD = -10 V
-VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = -8 V
0.1 1 10 100
10
100
1000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
-VDS, DRA IN TO SOUR C E VOL TAG E (V)
Crss
Coss
Ciss
Figure 17. Capacitance vs Drain
to Source Voltage
Figure 18. Forward Bias Safe Operating Area
0.1 1 10 100 300
0.005
0.01
0.1
1
10
20
10 s
10 ms
DC
1 s
100 m s
1 ms
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
TH IS AR EA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 160 oC/W
TA = 25 oC
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
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FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
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8
Typical Characteristics TJ = 25 oC unlenss otherwise noted
Figure 19. Single Pulse Maximum Power Dissipation
Figure 20. Junction-to-Ambient Transient Thermal Respon se Curve
10-4 10-3 10-2 10-1 110
100 1000
0.1
1
10
100
1000
2000
P(PK), PEAK T RANSIENT PO WER ( W )
SINGLE PULSE
RθJA = 160 oC/W
TA = 25 oC
t, PULSE WIDTH (sec)
10-4 10-3 10-2 10-1 110
100 1000
0.0005
0.001
0.01
0.1
1
2
SINGLE PULSE
RθJA = 160 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THER M A L
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
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Dimensional Outline and Pad Layout
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