IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 37 A IDM TC = 25C, pulse width limited by TJM 110 A IAR TC = 25C 22 A EAS TC = 25C 2 J dV/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns PD TC = 25C 890 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 C z 2500 3000 V~ V~ z 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. z 30 g TJ TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL 1mA Md Mounting torque Terminal connection torque t = 1min t = 1s Weight 1000V 37A 220m 300ns S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features z z z International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) z z Easy to mount Space savings High power density V Applications 6.5 V 200 nA z 50 A 3 mA TJ = 125C VGS = 10V, ID = 22A, Note 1 220 m z z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls DS99879A(4/08) (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ IXFN44N100P Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 22A, Note 1 RGi 20 35 S Gate input resistance 1.70 19 nF VGS = 0V, VDS = 25V, f = 1MHz 1060 pF 41 pF Ciss Coss SOT-227B Outline Crss td(on) Resistive Switching Times 60 ns tr VGS = 10V, VDS = 0.5 * VDSS, ID = 22A 68 ns td(off) RG = 1 (External) 90 ns 54 ns 305 nC 104 nC 125 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 22A Qgd RthJC 0.14 RthCS 0.05 Source-Drain Diode TJ = 25C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM C/W C/W Characteristic Values Min. Typ. Max. 44 A Repetitive, pulse width limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 22A, -di/dt = 100A/s VR = 100V 2.5 C 17 A Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN44N100P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 45 90 VGS = 10V 9V 40 35 70 30 60 8V ID - Amperes ID - Amperes VGS = 10V 9V 80 25 20 15 10 50 40 8V 30 20 7V 5 10 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 45 3.0 VGS = 10V 8V 40 2.8 VGS = 10V 2.6 35 2.4 RDS(on) - Normalized ID - Amperes 15 VDS - Volts VDS - Volts 30 25 20 7V 15 2.2 2.0 I D = 44A 1.8 1.6 I D = 22A 1.4 1.2 1.0 10 0.8 5 6V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 40 VGS = 10V 2.4 TJ = 125C 35 30 2.0 ID - Amperes RDS(on) - Normalized 2.2 1.8 1.6 TJ = 25C 1.4 25 20 15 1.2 10 1.0 5 0.8 0 0 10 20 30 40 50 60 70 80 90 -50 ID - Amperes -25 0 25 50 75 TC - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ 100 125 150 IXFN44N100P Fig. 7. Input Admittance Fig. 8. Transconductance 50 60 45 55 TJ = - 40C 50 40 45 TJ = 125C 25C - 40C 30 g f s - Siemens ID - Amperes 35 25 20 25C 40 125C 35 30 25 20 15 15 10 10 5 5 0 0 5 5.5 6 6.5 7 7.5 8 8.5 0 9 5 10 15 VGS - Volts 20 25 30 35 40 45 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 130 120 VDS = 500V 14 110 I D = 22A 100 I G = 10mA 12 VGS - Volts IS - Amperes 90 80 70 60 50 TJ = 125C 10 8 6 40 30 4 TJ = 25C 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 50 100 VSD - Volts 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Ciss 0.100 Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_44N100P(97)4-01-08-D http://store.iiic.cc/