FEATURES
This product is suitable for medium output power (800 mW) amplification
P
O (1dB) = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
P
O (1dB) = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz
MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz
Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V
3-pin power minimold (34 package)
ORDERING INFORMATION
Part Number Quantity Supplying Form
NESG250134 25 pcs (Non reel) • 12 mm wide embossed taping
NESG250134-T1 1 kpcs/reel • Pin 2 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 9.2 V
Emitter to Base Voltage VEBO 2.8 V
Collector Current IC 500 mA
Total Power Dissipation Ptot Note 1.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg 65 to +150 °C
Note Mounted on 3.8 × 9.0 cm, t = 0.8 mm glass epoxy PCB
PRELIMINARY DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON GERMANIUM RF TRANSISTOR
NESG250134
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (800 mW)
3-PIN POWER MINIMOLD (34 PACKAGE)
Document No. PU10422EJ01V0DS (1st edition)
Date Published January 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2003, 2004
THERMAL RESISTANCE (TA = +25°C)
Parameter Symbol Ratings Unit
Termal Resistance from Junction to
Ambient Note Rthj-a 80 °C/W
Note Mounted on 3.8 × 9.0 cm, t = 0.8 mm glass epoxy PCB
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter Symbol MIN. TYP. MAX. Unit
Collector to Emitter Voltage VCE 3.6 4.5 V
Collector Current IC 400 500 mA
Input Power Note Pin 12 17 dBm
Note Input power under conditions of VCE 4.5 V, f = 460 MHz
Preliminary Data Sheet PU10422EJ01V0DS
2
NESG250134
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA 1
µ
A
Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA 1
µ
A
DC Current Gain hFE Note 1 VCE = 3 V, IC = 100 mA 80 120 180
RF Characteristics
Gain Bandwidth Product fT VCE = 3.6 V, IC = 100 mA, f = 460 MHz 10 GHz
Insertion Power Gain S21e2 VCE = 3.6 V, IC = 100 mA, f = 460 MHz 19 dB
Maximum Satble Gain MSG Note 2 VCE = 3.6 V, IC = 100 mA, f = 460 MHz 23 dB
Linner gain (1) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 0 dBm 16 19 dB
Linner gain (2) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 0 dBm 16 dB
Output Power (1) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm 27 29 dBm
Output Power (2) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm 29 dBm
Collector Efficiency (1)
η
c VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm 60 %
Collector Efficiency (2)
η
c VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm 60 %
Notes 1. Pulse measurement: PW 350
µ
s, Duty Cycle 2%
2. MSG =
hFE CLASSIFICATION
Rank FB
Marking SN
hFE Value 80 to 180
S21
S12
Preliminary Data Sheet PU10422EJ01V0DS 3
NESG250134
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT: mm)
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
1.5±0.1
0.41
+0.03
–0.06
4.5±0.1
0.42±0.060.42±0.06
1.6±0.2
3.0
1.5
2
13
2.5±0.1
4.0±0.25
0.8 MIN.
0.47±0.06
Preliminary Data Sheet PU10422EJ01V0DS
4
NESG250134
M8E 00. 4 - 0110
The information in this document is current as of January, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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Preliminary Data Sheet PU10422EJ01V0DS 5
NESG250134
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
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0310
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For further information, please contact
NESG250134