FLM6472-4F C-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: add = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM6472-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 W Total Power Dissipation Tc = 25C PT Storage Temperature Tstg -65 to +175 C Channel Temperature Tch 175 C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Symbol IDSS Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 1700 2600 mA - 1700 - mS Test Conditions Transconductance gm VDS = 5V, IDS =1100mA Pinch-off Voltage Vp VDS = 5V, IDS = 85mA -0.5 -1.5 -3.0 V IGS = -85A -5.0 - - V 35.5 36.5 - dBm 8.5 9.5 - dB Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-added Efficiency Gain Flatness Idsr add VDS =10V, IDS = 0.65 IDSS (Typ.), f = 6.4 ~ 7.2 GHz, ZS=ZL= 50 ohm G - 1100 1300 mA - 36 - % - - 0.6 dB -44 -46 - dBc 3rd Order Intermodulation Distortion IM3 f = 7.2 GHz, f = 10 MHz 2-Tone Test Pout = 25.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 5.0 6.0 C/W Tch 10V x Idsr x Rth - - 80 C Channel Temperature Rise CASE STYLE: IB Edition 1.3 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM6472-4F C-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER V 24 18 12 6 0 50 100 150 =10V 33 f DS 1 = 7.2 GHz f2 = 7.21 GHz 31 2-tone test 29 -10 Pout -20 27 25 -30 IM3 23 -40 21 -50 IM3 (dBc) Output Power (S.C.L.) (dBm) Total Power Dissipation (W) 30 200 12 Case Temperature (C) 14 16 18 20 22 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY 38 Pin=28dBm 37 36 26dBm 35 24dBm 34 33 22dBm 32 6.4 6.6 6.8 7.0 36 34 Frequency (GHz) Pout 32 45 30 30 add 28 26 7.2 VDS=10V f = 6.8 GHz 18 20 22 24 26 28 Input Power (dBm) 2 15 0 add (%) VDS=10V P1dB Output Power (dBm) Output Power (dBm) 38 OUTPUT POWER vs. INPUT POWER FLM6472-4F C-Band Internally Matched FET S11 S22 0.1 +j250 +j10 25 6.4 6.2 GHz 7.4 0 0.2 +j100 +j25 6.2 GHz 6.6 SCALE FOR |S21| 6.8 250 50 7.2 180 4 3 2 6.4 0 7.4 7.0 -j10 1 6.2 GHz 7.4 7.0 S21 S12 +90 SCALE FOR |S12| +j50 6.4 7.2 7.2 -j250 6.8 7.0 6.8 6.6 6.6 7.4 6.8 6.6 6.2 GHz 6.4 7.0 7.2 -j25 -j100 -90 -j50 MAG ANG S-PARAMETERS VDS = 10V, IDS = 1100mA S21 S12 MAG ANG MAG ANG 6200 .355 48.9 3.308 19.2 .040 -30.6 .704 -70.9 6300 .396 43.1 3.273 7.5 .044 -43.2 .665 -78.3 6400 .428 36.4 3.256 -4.3 .048 -55.5 .627 -85.6 6500 .449 29.2 3.239 -15.8 .053 -65.7 .586 -93.3 6600 .460 21.2 3.246 -27.5 .058 -75.9 .548 -101.1 6700 .458 12.5 3.260 -39.4 .062 -85.7 .506 -109.8 6800 .445 2.9 3.290 -51.6 .066 -95.6 .465 -119.5 6900 .420 -8.4 3.329 -64.4 .071 -105.0 .429 -130.8 7000 .377 -21.9 3.368 -77.8 .077 -115.1 .391 -144.3 7100 .342 -30.9 3.397 -84.4 .079 -119.2 .371 -152.3 7200 .278 -52.6 3.407 -99.3 .083 -130.0 .347 -170.4 7300 .220 -85.7 3.368 -115.1 .086 -141.4 .338 169.0 7400 .207 -133.5 3.263 -131.9 .087 -153.0 .348 147.4 FREQUENCY (MHZ) S11 3 S22 MAG ANG FLM6472-4F C-Band Internally Matched FET 2.0 Min. (0.079) Case Style "IB" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 2 12.90.2 (0.508) 2-R 1.60.15 (0.063) 3 2.60.15 (0.102) 2.0 Min. (0.079) 0.6 (0.024) 5.2 Max. (0.205) 1.45 (0.059) 0.2 Max. (0.008) 10.7 (0.421) 1. Gate 2. Source (Flange) 3. Drain 12.0 (0.422) Unit: mm(inches) 17.00.15 (0.669) 21.00.15 (0.827) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com * Do not put this product into the mouth. Eudyna Devices Europe Ltd. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4