FEATURES
• High Output Power: P1dB = 36.5dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: ηadd = 36% (Typ.)
• Low IM3= -46dBc@Po = 25.5dBm
• Broad Band: 6.4 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
1
Edition 1.3
August 2004
FLM6472-4F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
25
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
PT
Tstg
Tch
Condition Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100Ω.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS - 1700 2600
- 1700 -
-0.5 -1.5 -3.0
-5.0 - -
8.5 9.5 -
-36-
35.5 36.5 -
VDS = 5V, IDS = 85mA
VDS = 5V, IDS =1100mA
VDS = 5V, VGS = 0V
IGS = -85µA
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 6.4 ~ 7.2 GHz,
ZS=ZL= 50 ohm
f = 7.2 GHz, ∆f = 10 MHz
2-Tone Test
Pout = 25.5dBm S.C.L.
mA
mS
V
dB
%
-44 -46 - dBc
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Drain Current - 1100 1300 mA
Idsr
IM3
ηadd
Gain Flatness --±0.6 dB∆G
Test Conditions Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Channel to Case
Thermal Resistance - 5.0 6.0 °C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE: IB
10V x Idsr x Rth
Channel Temperature Rise --80 °C
∆Tch
DESCRIPTION
The FLM6472-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FLM6472-4F
C-Band Internally Matched FET
POWER DERATING CURVE
500 100 150 200
Case Temperature (°C)
24
30
18
12
6
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 7.2 GHz
f2 = 7.21 GHz
2-tone test
1412 16 18 20 22
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
21
23
25
27
29
31
33
-50
-40
-30
-20
-10
Output Power (S.C.L.) (dBm)
IM3
Pout
IM3 (dBc)
OUTPUT POWER vs. FREQUENCY
Pin=28dBm
26dBm
24dBm
22dBm
6.66.4 6.8 7.27.0
Frequency (GHz)
36
37
38
34
35
33
32
Output Power (dBm)
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 6.8 GHz
2018 22 24 26 28
Input Power (dBm)
38
36
34
32
30
28
26
30
45
15
0
Output Power (dBm)
ηadd
Pout
ηadd (%)
3
FLM6472-4F
C-Band Internally Matched FET
S-PARAMETERS
VDS = 10V, IDS = 1100mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
6200 .355 48.9 3.308 19.2 .040 -30.6 .704 -70.9
6300 .396 43.1 3.273 7.5 .044 -43.2 .665 -78.3
6400 .428 36.4 3.256 -4.3 .048 -55.5 .627 -85.6
6500 .449 29.2 3.239 -15.8 .053 -65.7 .586 -93.3
6600 .460 21.2 3.246 -27.5 .058 -75.9 .548 -101.1
6700 .458 12.5 3.260 -39.4 .062 -85.7 .506 -109.8
6800 .445 2.9 3.290 -51.6 .066 -95.6 .465 -119.5
6900 .420 -8.4 3.329 -64.4 .071 -105.0 .429 -130.8
7000 .377 -21.9 3.368 -77.8 .077 -115.1 .391 -144.3
7100 .342 -30.9 3.397 -84.4 .079 -119.2 .371 -152.3
7200 .278 -52.6 3.407 -99.3 .083 -130.0 .347 -170.4
7300 .220 -85.7 3.368 -115.1 .086 -141.4 .338 169.0
7400 .207 -133.5 3.263 -131.9 .087 -153.0 .348 147.4
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180°
+90°
0°
-90°
S21
S12
0.2
0.1
SCALE FOR |S12|
25 25050Ω
SCALE FOR |S21|
123
4
7.4
7.4
6.6
6.6
6.2 GHz
6.2 GHz 6.4
6.4
6.8
6.8
7.0
7.0 7.2
7.2
7.4
7.4
6.6
6.6
6.2 GHz
6.2 GHz
6.8
6.8
7.0
7.0
7.2
7.2
6.4
6.4
4
FLM6472-4F
C-Band Internally Matched FET
2-R 1.6±0.15
(0.063)
0.6
(0.024)
10.7
(0.421)
12.0
(0.422)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
12.9±0.2
(0.508)
2.0 Min.
(0.079)
2.0 Min.
(0.079)
0.2 Max.
(0.008)
1.45
(0.059)
Case Style "IB"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
5.2 Max.
(0.205)
2.6±0.15
(0.102)
0.1
(0.004)
1
2
3
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
